富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AOWF600A60

AOWF600A60

MOSFET N-CH 600V 8A TO262F

Alpha & Omega Semiconductor Inc.

9,966 -
AOWF600A60

数据表

aMOS5™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tj) 10V 600mOhm @ 2.1A, 10V Through Hole 3.5V @ 250µA 11.5 nC @ 10 V 600 V ±20V 608 pF @ 100 V - - TO-262F - 23W (Tc) -55°C ~ 150°C (TJ)
FDC5614P_D87Z

FDC5614P_D87Z

MOSFET P-CH 60V 3A SUPERSOT6

onsemi

3,672 -
FDC5614P_D87Z

数据表

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3A (Ta) 4.5V, 10V 105mOhm @ 3A, 10V Surface Mount 3V @ 250µA 24 nC @ 10 V 60 V ±20V 759 pF @ 30 V - - SuperSOT™-6 - 1.6W (Ta) -55°C ~ 150°C (TJ)
SI6469DQ-T1-E3

SI6469DQ-T1-E3

MOSFET P-CH 8V 8TSSOP

Vishay Siliconix

2,461 -
SI6469DQ-T1-E3

数据表

TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6A (Ta) 1.8V, 4.5V 28mOhm @ 6A, 4.5V Surface Mount 450mV @ 250µA (Min) 40 nC @ 4.5 V 8 V ±8V - - - 8-TSSOP - 1.5W (Ta) -55°C ~ 150°C (TJ)
SI7840BDP-T1-GE3

SI7840BDP-T1-GE3

MOSFET N-CH 30V 11A PPAK SO-8

Vishay Siliconix

7,291 -
SI7840BDP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 8.5mOhm @ 16.5A, 10V Surface Mount 3V @ 250µA 21 nC @ 4.5 V 30 V ±20V - - - PowerPAK® SO-8 - 1.8W (Ta) -55°C ~ 150°C (TJ)
STD7NM50N

STD7NM50N

MOSFET N-CH 500V 5A DPAK

STMicroelectronics

3,070 -
STD7NM50N

数据表

MDmesh™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 780mOhm @ 2.5A, 10V Surface Mount 4V @ 250µA 12 nC @ 10 V 500 V ±25V 400 pF @ 50 V - - DPAK - 45W (Tc) -55°C ~ 150°C (TJ)
FQAF16N25C

FQAF16N25C

MOSFET N-CH 250V 11.4A TO3PF

onsemi

7,477 -
FQAF16N25C

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11.4A (Tc) 10V 270mOhm @ 5.7A, 10V Through Hole 4V @ 250µA 53.5 nC @ 10 V 250 V ±30V 1080 pF @ 25 V - - TO-3PF - 73W (Tc) -55°C ~ 150°C (TJ)
AOWF11C60

AOWF11C60

MOSFET N-CH 600V 11A TO262F

Alpha & Omega Semiconductor Inc.

2,176 -
AOWF11C60

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 400mOhm @ 5.5A, 10V Through Hole 5V @ 250µA 42 nC @ 10 V 600 V ±30V 2000 pF @ 100 V - - TO-262F - 28W (Tc) -55°C ~ 150°C (TJ)
NTMFS4841NT1G

NTMFS4841NT1G

MOSFET N-CH 30V 8.3A/57A 5DFN

onsemi

1 -
NTMFS4841NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.3A (Ta), 57A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 17 nC @ 4.5 V 30 V ±20V 1436 pF @ 12 V - - 5-DFN (5x6) (8-SOFL) - 870mW (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ)
ZXMN3A02X8TA

ZXMN3A02X8TA

MOSFET N-CH 30V 5.3A 8MSOP

Diodes Incorporated

730 -
ZXMN3A02X8TA

数据表

- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.3A (Ta) 4.5V, 10V 25mOhm @ 12A, 10V Surface Mount 1V @ 250µA 26.8 nC @ 10 V 30 V ±20V 1400 pF @ 25 V - - 8-MSOP - 1.1W (Ta) -55°C ~ 150°C (TJ)
BUK9277-55A,118

BUK9277-55A,118

MOSFET N-CH 55V 18A DPAK

Nexperia USA Inc.

2,451 -
BUK9277-55A,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 69mOhm @ 10A, 10V Surface Mount 2V @ 1mA 11 nC @ 5 V 55 V ±15V 643 pF @ 25 V AEC-Q101 - DPAK Automotive 51W (Tc) -55°C ~ 175°C (TJ)
BSP171PL6327HTSA1

BSP171PL6327HTSA1

MOSFET P-CH 60V 1.9A SOT223-4

Infineon Technologies

3,729 -
BSP171PL6327HTSA1

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.9A (Ta) 4.5V, 10V 300mOhm @ 1.9A, 10V Surface Mount 2V @ 460µA 20 nC @ 10 V 60 V ±20V 460 pF @ 25 V - - PG-SOT223-4-21 - 1.8W (Ta) -55°C ~ 150°C (TJ)
SISH112DN-T1-GE3

SISH112DN-T1-GE3

MOSFET N-CH 30V 11.3A PPAK

Vishay Siliconix

5,612 -
SISH112DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.3A (Tc) 4.5V, 10V 7.5mOhm @ 17.8A, 10V Surface Mount 1.5V @ 250µA 27 nC @ 4.5 V 30 V ±12V 2610 pF @ 15 V - - PowerPAK® 1212-8SH - 1.5W (Tc) -50°C ~ 150°C (TJ)
TP0610KL-TR1-E3

TP0610KL-TR1-E3

MOSFET P-CH 60V 270MA TO226AA

Vishay Siliconix

9,289 -
TP0610KL-TR1-E3

数据表

TrenchFET® TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 270mA (Ta) 4.5V, 10V 6Ohm @ 500mA, 10V Through Hole 3V @ 250µA 3 nC @ 15 V 60 V ±20V - - - TO-226AA (TO-92) - 800mW (Ta) -55°C ~ 150°C (TJ)
PJQ4574AP-AU_R2_002A1

PJQ4574AP-AU_R2_002A1

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

4,800 -
PJQ4574AP-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJD30N15S-AU_L2_006A1

PJD30N15S-AU_L2_006A1

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,000 -
PJD30N15S-AU_L2_006A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TPCP8005-H(TE85L,F

TPCP8005-H(TE85L,F

MOSFET N-CH 30V 11A PS-8

Toshiba Semiconductor and Storage

9,259 -
TPCP8005-H(TE85L,F

数据表

U-MOSV-H 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 12.9mOhm @ 5.5A, 10V Surface Mount 2.5V @ 1mA 20 nC @ 10 V 30 V ±20V 2150 pF @ 10 V - - PS-8 (2.9x2.4) - 840mW (Ta) 150°C (TJ)
BSC889N03MSGATMA1

BSC889N03MSGATMA1

MOSFET N-CH 30V 12A 44A TDSON

Infineon Technologies

8,430 -
BSC889N03MSGATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 44A (Tc) 4.5V, 10V 9.1mOhm @ 30A, 10V Surface Mount 2V @ 250µA 20 nC @ 10 V 30 V ±20V 1500 pF @ 15 V - - PG-TDSON-8-1 - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ)
NDD04N60ZT4G

NDD04N60ZT4G

MOSFET N-CH 600V 4.1A DPAK

onsemi

4,375 -
NDD04N60ZT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.1A (Tc) 10V 2Ohm @ 2A, 10V Surface Mount 4.5V @ 50µA 29 nC @ 10 V 600 V ±30V 640 pF @ 25 V - - DPAK - 83W (Tc) -55°C ~ 150°C (TJ)
BUK7Y54-75B,115

BUK7Y54-75B,115

MOSFET N-CH 75V 21.4A LFPAK56

NXP USA Inc.

2,583 -
BUK7Y54-75B,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21.4A (Tc) 10V 54mOhm @ 10A, 10V Surface Mount 4V @ 1mA 12 nC @ 10 V 75 V ±20V 803 pF @ 25 V - - LFPAK56, Power-SO8 - 59W (Tc) -55°C ~ 175°C (TJ)
BUK9Y22-30B,115

BUK9Y22-30B,115

MOSFET N-CH 30V 37.7A LFPAK56

Nexperia USA Inc.

5,790 -
BUK9Y22-30B,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 37.7A (Tc) 5V, 10V 19mOhm @ 20A, 10V Surface Mount 2V @ 1mA 10.5 nC @ 5 V 30 V ±15V 940 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 59.4W (Tc) -55°C ~ 175°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户