| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI8441DB-T2-E1MOSFET P-CH 20V 10.5A 6MICROFOOT Vishay Siliconix |
3,130 | - |
|
数据表 |
TrenchFET® | 6-UFBGA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 10.5A (Tc) | 1.2V, 4.5V | 80mOhm @ 1A, 4.5V | Surface Mount | 700mV @ 250µA | 13 nC @ 5 V | 20 V | ±5V | 600 pF @ 10 V | - | - | 6-Micro Foot™ (1.5x1) | - | 2.77W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) |
|
SI9410BDY-T1-GE3MOSFET N-CH 30V 6.2A 8SO Vishay Siliconix |
6,861 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.2A (Ta) | 4.5V, 10V | 24mOhm @ 8.1A, 10V | Surface Mount | 3V @ 250µA | 23 nC @ 10 V | 30 V | ±20V | - | - | - | 8-SOIC | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |
|
SI9424BDY-T1-GE3MOSFET P-CH 20V 5.6A 8SO Vishay Siliconix |
6,919 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.6A (Ta) | 2.5V, 4.5V | 25mOhm @ 7.1A, 4.5V | Surface Mount | 850mV @ 250µA | 40 nC @ 4.5 V | 20 V | ±9V | - | - | - | 8-SOIC | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) |
|
SI9434BDY-T1-GE3MOSFET P-CH 20V 4.5A 8SO Vishay Siliconix |
4,010 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.5A (Ta) | 2.5V, 4.5V | 40mOhm @ 6.3A, 4.5V | Surface Mount | 1.5V @ 250µA | 18 nC @ 4.5 V | 20 V | ±8V | - | - | - | 8-SOIC | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
SIA850DJ-T1-GE3MOSFET N-CH 190V 950MA PPAK Vishay Siliconix |
5,294 | - |
|
数据表 |
LITTLE FOOT® | PowerPAK® SC-70-6 Dual | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 950mA (Tc) | 1.8V, 4.5V | 3.8Ohm @ 360mA, 4.5V | Surface Mount | 1.4V @ 250µA | 4.5 nC @ 10 V | 190 V | ±16V | 90 pF @ 100 V | - | Schottky Diode (Isolated) | PowerPAK® SC-70-6 Dual | - | 1.9W (Ta), 7W (Tc) | -55°C ~ 150°C (TJ) |
|
SIB408DK-T1-GE3MOSFET N-CH 30V 7A PPAK SC75-6 Vishay Siliconix |
4,442 | - |
|
数据表 |
TrenchFET® | PowerPAK® SC-75-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 4.5V, 10V | 40mOhm @ 6A, 10V | Surface Mount | 2.5V @ 250µA | 9.5 nC @ 10 V | 30 V | ±20V | 350 pF @ 15 V | - | - | PowerPAK® SC-75-6 | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHH27N60EF-T1-GE3MOSFET N-CH 600V 29A PPAK 8 X 8 Vishay Siliconix |
9,368 | - |
|
数据表 |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 29A (Tc) | 10V | 100mOhm @ 13.5A, 10V | Surface Mount | 4V @ 250µA | 135 nC @ 10 V | 600 V | ±30V | 2609 pF @ 100 V | - | - | PowerPAK® 8 x 8 | - | 202W (Tc) | -55°C ~ 150°C (TJ) |
|
SIB411DK-T1-GE3MOSFET P-CH 20V 9A PPAK SC75-6 Vishay Siliconix |
4,329 | - |
|
数据表 |
TrenchFET® | PowerPAK® SC-75-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 1.8V, 4.5V | 66mOhm @ 3.3A, 4.5V | Surface Mount | 1V @ 250µA | 15 nC @ 8 V | 20 V | ±8V | 470 pF @ 10 V | - | - | PowerPAK® SC-75-6 | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) |
|
SIE726DF-T1-GE3MOSFET N-CH 30V 60A 10POLARPAK Vishay Siliconix |
6,317 | - |
|
数据表 |
SkyFET®, TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | Surface Mount | 3V @ 250µA | 160 nC @ 10 V | 30 V | ±20V | 7400 pF @ 15 V | - | - | 10-PolarPAK® (L) | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) |
|
SIE800DF-T1-GE3MOSFET N-CH 30V 50A 10POLARPAK Vishay Siliconix |
8,600 | - |
|
数据表 |
TrenchFET® | 10-PolarPAK® (S) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 7.2mOhm @ 11A, 10V | Surface Mount | 3V @ 250µA | 35 nC @ 10 V | 30 V | ±20V | 1600 pF @ 15 V | - | - | 10-PolarPAK® (S) | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) |