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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI8441DB-T2-E1

SI8441DB-T2-E1

MOSFET P-CH 20V 10.5A 6MICROFOOT

Vishay Siliconix

3,130 -
SI8441DB-T2-E1

数据表

TrenchFET® 6-UFBGA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10.5A (Tc) 1.2V, 4.5V 80mOhm @ 1A, 4.5V Surface Mount 700mV @ 250µA 13 nC @ 5 V 20 V ±5V 600 pF @ 10 V - - 6-Micro Foot™ (1.5x1) - 2.77W (Ta), 13W (Tc) -55°C ~ 150°C (TJ)
SI9410BDY-T1-GE3

SI9410BDY-T1-GE3

MOSFET N-CH 30V 6.2A 8SO

Vishay Siliconix

6,861 -
SI9410BDY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.2A (Ta) 4.5V, 10V 24mOhm @ 8.1A, 10V Surface Mount 3V @ 250µA 23 nC @ 10 V 30 V ±20V - - - 8-SOIC - 1.5W (Ta) -55°C ~ 150°C (TJ)
SI9424BDY-T1-GE3

SI9424BDY-T1-GE3

MOSFET P-CH 20V 5.6A 8SO

Vishay Siliconix

6,919 -
SI9424BDY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.6A (Ta) 2.5V, 4.5V 25mOhm @ 7.1A, 4.5V Surface Mount 850mV @ 250µA 40 nC @ 4.5 V 20 V ±9V - - - 8-SOIC - 1.25W (Ta) -55°C ~ 150°C (TJ)
SI9434BDY-T1-GE3

SI9434BDY-T1-GE3

MOSFET P-CH 20V 4.5A 8SO

Vishay Siliconix

4,010 -
SI9434BDY-T1-GE3

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 2.5V, 4.5V 40mOhm @ 6.3A, 4.5V Surface Mount 1.5V @ 250µA 18 nC @ 4.5 V 20 V ±8V - - - 8-SOIC - 1.3W (Ta) -55°C ~ 150°C (TJ)
SIA850DJ-T1-GE3

SIA850DJ-T1-GE3

MOSFET N-CH 190V 950MA PPAK

Vishay Siliconix

5,294 -
SIA850DJ-T1-GE3

数据表

LITTLE FOOT® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 950mA (Tc) 1.8V, 4.5V 3.8Ohm @ 360mA, 4.5V Surface Mount 1.4V @ 250µA 4.5 nC @ 10 V 190 V ±16V 90 pF @ 100 V - Schottky Diode (Isolated) PowerPAK® SC-70-6 Dual - 1.9W (Ta), 7W (Tc) -55°C ~ 150°C (TJ)
SIB408DK-T1-GE3

SIB408DK-T1-GE3

MOSFET N-CH 30V 7A PPAK SC75-6

Vishay Siliconix

4,442 -
SIB408DK-T1-GE3

数据表

TrenchFET® PowerPAK® SC-75-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 4.5V, 10V 40mOhm @ 6A, 10V Surface Mount 2.5V @ 250µA 9.5 nC @ 10 V 30 V ±20V 350 pF @ 15 V - - PowerPAK® SC-75-6 - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ)
SIHH27N60EF-T1-GE3

SIHH27N60EF-T1-GE3

MOSFET N-CH 600V 29A PPAK 8 X 8

Vishay Siliconix

9,368 -
SIHH27N60EF-T1-GE3

数据表

E 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 100mOhm @ 13.5A, 10V Surface Mount 4V @ 250µA 135 nC @ 10 V 600 V ±30V 2609 pF @ 100 V - - PowerPAK® 8 x 8 - 202W (Tc) -55°C ~ 150°C (TJ)
SIB411DK-T1-GE3

SIB411DK-T1-GE3

MOSFET P-CH 20V 9A PPAK SC75-6

Vishay Siliconix

4,329 -
SIB411DK-T1-GE3

数据表

TrenchFET® PowerPAK® SC-75-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9A (Tc) 1.8V, 4.5V 66mOhm @ 3.3A, 4.5V Surface Mount 1V @ 250µA 15 nC @ 8 V 20 V ±8V 470 pF @ 10 V - - PowerPAK® SC-75-6 - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ)
SIE726DF-T1-GE3

SIE726DF-T1-GE3

MOSFET N-CH 30V 60A 10POLARPAK

Vishay Siliconix

6,317 -
SIE726DF-T1-GE3

数据表

SkyFET®, TrenchFET® 10-PolarPAK® (L) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 2.4mOhm @ 25A, 10V Surface Mount 3V @ 250µA 160 nC @ 10 V 30 V ±20V 7400 pF @ 15 V - - 10-PolarPAK® (L) - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
SIE800DF-T1-GE3

SIE800DF-T1-GE3

MOSFET N-CH 30V 50A 10POLARPAK

Vishay Siliconix

8,600 -
SIE800DF-T1-GE3

数据表

TrenchFET® 10-PolarPAK® (S) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 7.2mOhm @ 11A, 10V Surface Mount 3V @ 250µA 35 nC @ 10 V 30 V ±20V 1600 pF @ 15 V - - 10-PolarPAK® (S) - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
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