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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIR406DP-T1-GE3

SIR406DP-T1-GE3

MOSFET N-CH 25V 40A PPAK SO-8

Vishay Siliconix

9,365 -
SIR406DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 3.8mOhm @ 15A, 10V Surface Mount 2.4V @ 250µA 50 nC @ 10 V 25 V ±20V 2083 pF @ 10 V - - PowerPAK® SO-8 - 5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ)
SIR432DP-T1-GE3

SIR432DP-T1-GE3

MOSFET N-CH 100V 28.4A PPAK SO-8

Vishay Siliconix

7,796 -
SIR432DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 28.4A (Tc) 7.5V, 10V 30.6mOhm @ 8.6A, 10V Surface Mount 4V @ 250µA 32 nC @ 10 V 100 V ±20V 1170 pF @ 50 V - - PowerPAK® SO-8 - 5W (Ta), 54W (Tc) -55°C ~ 150°C (TJ)
SIR436DP-T1-GE3

SIR436DP-T1-GE3

MOSFET N-CH 25V 40A PPAK SO-8

Vishay Siliconix

8,889 -
SIR436DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 4.6mOhm @ 20A, 10V Surface Mount 3V @ 250µA 47 nC @ 10 V 25 V ±20V 1715 pF @ 15 V - - PowerPAK® SO-8 - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
SIR494DP-T1-GE3

SIR494DP-T1-GE3

MOSFET N-CH 12V 60A PPAK SO-8

Vishay Siliconix

3,054 -
SIR494DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 150 nC @ 10 V 12 V ±20V 6900 pF @ 6 V - - PowerPAK® SO-8 - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
SIR874DP-T1-GE3

SIR874DP-T1-GE3

MOSFET N-CH 25V 20A PPAK SO-8

Vishay Siliconix

2,605 -
SIR874DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 9.4mOhm @ 10A, 10V Surface Mount 2.2V @ 250µA 27 nC @ 10 V 25 V ±20V 985 pF @ 15 V - - PowerPAK® SO-8 - 3.9W (Ta), 29.8W (Tc) -55°C ~ 150°C (TJ)
SQ2319ES-T1-GE3

SQ2319ES-T1-GE3

MOSFET P-CH 40V 4.6A TO-236

Vishay Siliconix

9,864 -
SQ2319ES-T1-GE3

数据表

- TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Obsolete P-Channel MOSFET (Metal Oxide) 4.6A (Tc) - 75mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA 16 nC @ 10 V 40 V - 620 pF @ 25 V - - SOT-23-3 (TO-236) - - -
SQ7002K-T1-GE3

SQ7002K-T1-GE3

MOSFET N-CH 60V 320MA SOT23-3

Vishay Siliconix

7,504 -
SQ7002K-T1-GE3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 320mA (Tc) 4.5V, 10V 1.3Ohm @ 500mA, 10V Surface Mount 2.5V @ 250µA 1.4 nC @ 4.5 V 60 V ±20V 24 pF @ 30 V - - SOT-23-3 (TO-236) - 500mW (Tc) -55°C ~ 175°C (TJ)
SQD40N06-25L-GE3

SQD40N06-25L-GE3

MOSFET N-CH 60V 30A TO252

Vishay Siliconix

5,928 -
SQD40N06-25L-GE3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 22mOhm @ 20A, 10V Surface Mount 3V @ 250µA 40 nC @ 10 V 60 V ±20V 1800 pF @ 25 V - - TO-252AA - - -55°C ~ 175°C (TJ)
SQD45N05-20L-GE3

SQD45N05-20L-GE3

MOSFET N-CH 50V 50A TO252

Vishay Siliconix

5,131 -
SQD45N05-20L-GE3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 18mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 43 nC @ 10 V 50 V ±20V 1800 pF @ 25 V - - TO-252AA - 2.5W (Ta), 75W (Tc) -55°C ~ 175°C (TJ)
SQD50N04-09H-GE3

SQD50N04-09H-GE3

MOSFET N-CH 40V 50A TO252

Vishay Siliconix

5,869 -
SQD50N04-09H-GE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) - 9mOhm @ 20A, 10V Surface Mount 5V @ 250µA 76 nC @ 10 V 40 V - 4240 pF @ 25 V - - TO-252AA - - -
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