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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFR014PBF-BE3

IRFR014PBF-BE3

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

1,724 -
IRFR014PBF-BE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 7.7A (Tc) - 200mOhm @ 4.6A, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 60 V ±20V 300 pF @ 25 V - - TO-252AA - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
NVMFS6H836NWFT1G

NVMFS6H836NWFT1G

MOSFET N-CH 80V 15A/74A 5DFN

onsemi

1,500 -
NVMFS6H836NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Ta), 74A (Tc) 10V 6.7mOhm @ 15A, 10V Surface Mount, Wettable Flank 4V @ 95µA 25 nC @ 10 V 80 V ±20V 1640 pF @ 40 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.7W (Ta), 89W (Tc) -55°C ~ 175°C (TJ)
NVMYS4D1N06CLTWG

NVMYS4D1N06CLTWG

MOSFET N-CH 60V 22A/100A LFPAK4

onsemi

518 -
NVMYS4D1N06CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 100A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V Surface Mount 2V @ 80µA 34 nC @ 10 V 60 V ±20V 2200 pF @ 25 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.7W (Ta), 79W (Tc) -55°C ~ 175°C (TJ)
NVMFWS020N06CT1G

NVMFWS020N06CT1G

MOSFET N-CH 60V 9A/28A 5DFN

onsemi

7,450 -
NVMFWS020N06CT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Ta), 28A (Tc) 10V 19.6mOhm @ 4A, 10V Surface Mount 4V @ 20µA 5.8 nC @ 10 V 60 V ±20V 355 pF @ 30 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.4W (Ta), 31W (Tc) -55°C ~ 175°C (TJ)
AON6426

AON6426

MOSFET N-CH 30V 14A/65A 8DFN

Alpha & Omega Semiconductor Inc.

6,947 -
AON6426

数据表

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 65A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 45 nC @ 10 V 30 V ±20V 2300 pF @ 15 V - - 8-DFN (5x6) - 2W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
DMTH15H017SPSWQ-13

DMTH15H017SPSWQ-13

MOSFET BVDSS: 101V~250V PowerDI5

Diodes Incorporated

9,176 -
DMTH15H017SPSWQ-13

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 11A (Ta), 61A (Tc) 8V, 10V 19mOhm @ 20A, 10V Surface Mount, Wettable Flank 4V @ 250µA 34 nC @ 10 V 150 V ±20V 2344 pF @ 75 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 1.5W (Ta) -55°C ~ 175°C (TJ)
IRFR9014N

IRFR9014N

MOSFET P-CH 60V 5.1A DPAK

Infineon Technologies

7,037 -
IRFR9014N

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete P-Channel MOSFET (Metal Oxide) 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V Surface Mount 4V @ 250µA 12 nC @ 10 V 60 V ±20V 270 pF @ 25 V - - TO-252AA (DPAK) - 2.5W (Ta), 25W (Tc) -
AOWF450A70

AOWF450A70

N

Alpha & Omega Semiconductor Inc.

5,659 -
AOWF450A70

数据表

aMOS5™ TO-262-3 Long Leads, I2PAK, TO-262AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tj) 10V 450mOhm @ 2.3A, 10V Through Hole 3.6V @ 250µA 20 nC @ 10 V 700 V ±20V 1115 pF @ 100 V - - TO-262F - 26W (Tc) -55°C ~ 150°C (TJ)
SPD06N60C3ATMA1

SPD06N60C3ATMA1

MOSFET N-CH 600V 6.2A TO252-3

Infineon Technologies

5,186 -
SPD06N60C3ATMA1

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 6.2A (Tc) 10V 750mOhm @ 3.9A, 10V Surface Mount 3.9V @ 260µA 31 nC @ 10 V 600 V ±20V 620 pF @ 25 V - - PG-TO252-3 - 74W (Tc) -55°C ~ 150°C (TJ)
TSM033NB04LCR RLG

TSM033NB04LCR RLG

MOSFET N-CH 40V 21A/121A 8PDFN

Taiwan Semiconductor Corporation

4,354 -
TSM033NB04LCR RLG

数据表

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 121A (Tc) 4.5V, 10V 3.3mOhm @ 21A, 10V Surface Mount 2.5V @ 250µA 79 nC @ 10 V 40 V ±20V 4456 pF @ 20 V - - 8-PDFN (5.2x5.75) - 3.1W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
STP4N52K3

STP4N52K3

MOSFET N-CH 525V 2.5A TO220

STMicroelectronics

2,148 -
STP4N52K3

数据表

SuperMESH3™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 2.6Ohm @ 1.25A, 10V Through Hole 4.5V @ 50µA 11 nC @ 10 V 525 V ±30V 334 pF @ 100 V - - TO-220 - 45W (Tc) 150°C (TJ)
DMPH33M8SPSWQ-13

DMPH33M8SPSWQ-13

MOSFET BVDSS: 25V~30V PowerDI506

Diodes Incorporated

6,952 -
DMPH33M8SPSWQ-13

数据表

- 8-PowerTDFN Bulk Active P-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 3.8mOhm @ 20A, 10V Surface Mount 3V @ 250µA 81 nC @ 10 V 30 V ±20V 3775 pF @ 15 V AEC-Q101 - PowerDI5060-8 (Type Q) Automotive 1.7W (Ta) -55°C ~ 175°C (TJ)
IRF5803D2TR

IRF5803D2TR

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

9,202 -
IRF5803D2TR

数据表

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.4A (Ta) 4.5V, 10V 112mOhm @ 3.4A, 10V Surface Mount 3V @ 250µA 37 nC @ 10 V 40 V ±20V 1110 pF @ 25 V - Schottky Diode (Isolated) 8-SO - 2W (Ta) -55°C ~ 150°C (TJ)
SIHU7N60E-E3

SIHU7N60E-E3

MOSFET N-CH 600V 7A TO251

Vishay Siliconix

7,154 -
SIHU7N60E-E3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 40 nC @ 10 V 600 V ±30V 680 pF @ 100 V - - TO-251AA - 78W (Tc) -55°C ~ 150°C (TJ)
AUIRFR3504TRL

AUIRFR3504TRL

MOSFET N-CH 40V 56A DPAK

Infineon Technologies

6,167 -
AUIRFR3504TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 9.2mOhm @ 30A, 10V Surface Mount 4V @ 250µA 71 nC @ 10 V 40 V ±20V 2150 pF @ 25 V - - TO-252AA (DPAK) - 140W (Tc) -55°C ~ 175°C (TJ)
MSJB06N80A-TP

MSJB06N80A-TP

Interface

Micro Commercial Co

7,373 -
MSJB06N80A-TP

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 6A 10V 1.2Ohm @ 2.5A, 10V Surface Mount 4.5V @ 250µA 10.6 nC @ 10 V 800 V ±30V 349 pF @ 100 V - - D2PAK - 35W (Tc) -55°C ~ 150°C
DMTH61M8SPS-13

DMTH61M8SPS-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

8,365 -
DMTH61M8SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 215A (Tc) 10V 1.6mOhm @ 30A, 10V Surface Mount 4V @ 250µA 130.6 nC @ 10 V 60 V ±20V 8306 pF @ 30 V - - PowerDI5060-8 (Type K) - 3.2W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
IRLR3715TR

IRLR3715TR

MOSFET N-CH 20V 54A DPAK

Infineon Technologies

9,706 -
IRLR3715TR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V Surface Mount 3V @ 250µA 17 nC @ 4.5 V 20 V ±20V 1060 pF @ 10 V - - TO-252AA (DPAK) - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ)
IRF820LPBF

IRF820LPBF

MOSFET N-CH 500V 2.5A I2PAK

Vishay Siliconix

5,434 -
IRF820LPBF

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V Through Hole 4V @ 250µA 24 nC @ 10 V 500 V ±20V 360 pF @ 25 V - - I2PAK - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
STP5NK65Z

STP5NK65Z

MOSFET N-CH 650V 5A TO220

STMicroelectronics

4,054 -
STP5NK65Z

数据表

SuperMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.8Ohm @ 2.1A, 10V Through Hole 4.5V @ 50µA 35 nC @ 10 V 650 V ±30V 680 pF @ 25 V - - TO-220 - 85W (Tc) -55°C ~ 150°C (TJ)
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