Taiwan Semiconductor Corporation|场效应晶体管（FETs）、MOSFETs - 页 27

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TSM60NB1R4CP ROG MOSFET N-CHANNEL 600V 3A TO252 Taiwan Semiconductor Corporation	2,674	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	10V	1.4Ohm @ 900mA, 10V	Surface Mount	4V @ 250µA	7.12 nC @ 10 V	600 V	±30V	257.3 pF @ 100 V	-	-	TO-252 (DPAK)	-	28.4W (Tc)	-55°C ~ 150°C (TJ)
TSM60NC1R5CP ROG 600V, 3A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	10,345	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	10V	1.5Ohm @ 1A, 10V	Surface Mount	5.5V @ 1mA	8.1 nC @ 10 V	600 V	±20V	242 pF @ 25 V	-	-	TO-252 (DPAK)	-	55W (Tc)	-55°C ~ 150°C (TJ)
TSM10NC65CF 650V, 10A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	5,159	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	10V	900mOhm @ 2A, 10V	Through Hole	4.5V @ 250µA	34 nC @ 10 V	650 V	±30V	1650 pF @ 50 V	-	-	ITO-220S	-	45W (Tc)	-55°C ~ 150°C (TJ)
TSM10NC60CF 600V, 10A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	5,408	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	10V	750mOhm @ 2.5A, 10V	Through Hole	4.5V @ 250µA	33 nC @ 10 V	600 V	±30V	1652 pF @ 50 V	-	-	ITO-220S	-	45W (Tc)	-55°C ~ 150°C (TJ)
TSM80N1R2CI C0G MOSFET N-CH 800V 5.5A ITO220AB Taiwan Semiconductor Corporation	7,360	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	1.2Ohm @ 1.8A, 10V	Through Hole	4V @ 250µA	19.4 nC @ 10 V	800 V	±30V	685 pF @ 100 V	-	-	ITO-220AB	-	25W (Tc)	-55°C ~ 150°C (TJ)
TSM80N950CI C0G MOSFET N-CH 800V 6A ITO220AB Taiwan Semiconductor Corporation	2,369	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	950mOhm @ 2A, 10V	Through Hole	4V @ 250µA	19.6 nC @ 10 V	800 V	±30V	691 pF @ 100 V	-	-	ITO-220AB	-	25W (Tc)	-55°C ~ 150°C (TJ)
TSM035NB04LCZ 40V, 157A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	9,964	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Ta), 157A (Tc)	4.5V, 10V	3.5mOhm @ 18A, 10V	Through Hole	2.5V @ 250µA	111 nC @ 10 V	40 V	±20V	6350 pF @ 20 V	-	-	TO-220	-	2W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB600CP 600V, 7A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	4,384	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	600mOhm @ 2.1A, 10V	Surface Mount	4V @ 250µA	13 nC @ 10 V	600 V	±30V	516 pF @ 100 V	-	-	TO-252 (DPAK)	-	63W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB600CH 600V, 7A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	6,031	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	600mOhm @ 2.1A, 10V	Through Hole	4V @ 250µA	13 nC @ 10 V	600 V	±30V	516 pF @ 100 V	-	-	TO-251 (IPAK)	-	63W (Tc)	-55°C ~ 150°C (TJ)
TSM60N380CH C5G MOSFET N-CH 600V 11A TO251 Taiwan Semiconductor Corporation	3,773	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	380mOhm @ 5.5A, 10V	Through Hole	4V @ 250µA	20.5 nC @ 10 V	600 V	±30V	1040 pF @ 100 V	-	-	TO-251 (IPAK)	-	125W (Tc)	-55°C ~ 150°C (TJ)

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