富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SCT027W65G3-4AG

SCT027W65G3-4AG

TO247-4

STMicroelectronics

6,484 -
SCT027W65G3-4AG

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 60A (Tc) 15V, 18V 39.3mOhm @ 30A, 18V Through Hole 4.2V @ 5mA 51 nC @ 18 V 650 V +22V, -10V 1229 pF @ 400 V AEC-Q101 - TO-247-4 Automotive 313W (Tc) -55°C ~ 200°C (TJ)
STWA48N60M2

STWA48N60M2

MOSFET N-CH 600V 42A TO247

STMicroelectronics

7 -
STWA48N60M2

数据表

MDmesh™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 70mOhm @ 21A, 10V Through Hole 4V @ 250µA 70 nC @ 10 V 600 V ±25V 3060 pF @ 100 V - - TO-247 Long Leads - 300W (Tc) -55°C ~ 150°C (TJ)
STW72N60DM6AG

STW72N60DM6AG

DISCRETE

STMicroelectronics

6,476 -
STW72N60DM6AG

数据表

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 42mOhm @ 28A, 10V Through Hole 4.75V @ 250µA 98 nC @ 10 V 600 V ±25V 4444 pF @ 100 V AEC-Q101 - TO-247-3 Automotive 390W (Tc) -55°C ~ 150°C (TJ)
STB25NM60ND

STB25NM60ND

MOSFET N-CH 600V 21A D2PAK

STMicroelectronics

5,335 -
STB25NM60ND

数据表

FDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 160mOhm @ 10.5A, 10V Surface Mount 5V @ 250µA 80 nC @ 10 V 600 V ±25V 2400 pF @ 50 V - - D2PAK - 160W (Tc) 150°C (TJ)
STWA72N60DM6AG

STWA72N60DM6AG

DISCRETE

STMicroelectronics

5,475 -
STWA72N60DM6AG

数据表

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 42mOhm @ 28A, 10V Through Hole 4.75V @ 250µA 98 nC @ 10 V 600 V ±25V 4444 pF @ 100 V AEC-Q101 - TO-247 Long Leads Automotive 390W (Tc) -55°C ~ 150°C (TJ)
STY140NS10

STY140NS10

MOSFET N-CH 100V 140A MAX247

STMicroelectronics

4,186 -
STY140NS10

数据表

MESH OVERLAY™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 140A (Tc) 10V 11mOhm @ 70A, 10V Through Hole 4V @ 250µA 600 nC @ 10 V 100 V ±20V 12600 pF @ 25 V - - MAX247™ - 450W (Tc) -55°C ~ 175°C (TJ)
STU7N60M2

STU7N60M2

MOSFET N-CH 600V 5A IPAK

STMicroelectronics

3,000 -
STU7N60M2

数据表

MDmesh™ II Plus TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 950mOhm @ 2.5A, 10V Through Hole 4V @ 250µA 8.8 nC @ 10 V 600 V ±25V 271 pF @ 100 V - - TO-251 (IPAK) - 60W (Tc) -55°C ~ 150°C (TJ)
STB24NM65N

STB24NM65N

MOSFET N-CH 650V 19A D2PAK

STMicroelectronics

9,338 -
STB24NM65N

数据表

MDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 190mOhm @ 9.5A, 10V Surface Mount 4V @ 250µA 70 nC @ 10 V 650 V ±25V 2500 pF @ 50 V - - D2PAK - 160W (Tc) 150°C (TJ)
STB26NM60ND

STB26NM60ND

MOSFET N-CH 600V 21A D2PAK

STMicroelectronics

6,353 -
STB26NM60ND

数据表

FDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 175mOhm @ 10.5A, 10V Surface Mount 5V @ 250µA 54.6 nC @ 10 V 600 V ±25V 1817 pF @ 100 V - - TO-263 (D2PAK) - 190W (Tc) 150°C (TJ)
STP36N55M5

STP36N55M5

MOSFET N-CH 550V 33A TO220

STMicroelectronics

25 -
STP36N55M5

数据表

MDmesh™ V TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 80mOhm @ 16.5A, 10V Through Hole 5V @ 250µA 62 nC @ 10 V 550 V ±25V 2670 pF @ 100 V - - TO-220 - 190W (Tc) 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户