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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AOTF12N50

AOTF12N50

MOSFET N-CH 500V 12A TO220-3F

Alpha & Omega Semiconductor Inc.

4,927 -
AOTF12N50

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 520mOhm @ 6A, 10V Through Hole 4.5V @ 250µA 37 nC @ 10 V 500 V ±30V 1633 pF @ 25 V - - TO-220F - 50W (Tc) -55°C ~ 150°C (TJ)
AOWF10N60

AOWF10N60

MOSFET N-CH 600V 10A TO262F

Alpha & Omega Semiconductor Inc.

5,761 -
AOWF10N60

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 750mOhm @ 5A, 10V Through Hole 4.5V @ 250µA 40 nC @ 10 V 600 V ±30V 1600 pF @ 25 V - - TO-262F - 25W (Tc) -55°C ~ 150°C (TJ)
SPD50N03S2-07

SPD50N03S2-07

MOSFET N-CH 30V 50A TO252-3

Infineon Technologies

4,022 -
SPD50N03S2-07

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 7.3mOhm @ 50A, 10V Surface Mount 4V @ 85µA 46.5 nC @ 10 V 30 V ±20V 2170 pF @ 25 V - - PG-TO252-3-11 - 136W (Tc) -55°C ~ 175°C (TJ)
BSP135 E6327

BSP135 E6327

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies

8,827 -
BSP135 E6327

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Discontinued at Digi-Key N-Channel, Depletion Mode MOSFET (Metal Oxide) 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V Surface Mount 1V @ 94µA 4.9 nC @ 5 V 600 V ±20V 146 pF @ 25 V - - PG-SOT223-4 - 1.8W (Ta) -55°C ~ 150°C (TJ)
AONR66924

AONR66924

N

Alpha & Omega Semiconductor Inc.

4,692 -
AONR66924

数据表

AlphaSGT™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 32A (Tc) 4.5V, 10V 13.5mOhm @ 20A, 10V Surface Mount 2.6V @ 250µA 40 nC @ 10 V 100 V ±20V 1450 pF @ 50 V - - 8-DFN-EP (3x3) - 5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
TSM1NB60LCW RPG

TSM1NB60LCW RPG

600V, 0.55A, SINGLE N-CHANNEL PO

Taiwan Semiconductor Corporation

3,760 -
TSM1NB60LCW RPG

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 230mA (Ta), 550mA (Tc) 10V 15Ohm @ 270mA, 10V Surface Mount 2V @ 250µA 7.5 nC @ 10 V 600 V ±30V 98 pF @ 300 V - - SOT-223 - 10.4W (Tc) -55°C ~ 150°C (TJ)
PJQ5439E-AU_R2_006A1

PJQ5439E-AU_R2_006A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,970 -
PJQ5439E-AU_R2_006A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10.5A (Ta), 33A (Tc) 4.5V, 10V 18.8mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 22 nC @ 10 V 30 V ±25V 1012 pF @ 25 V AEC-Q101 - DFN5060-8 Automotive 3.3W (Ta), 33W (Tc) -55°C ~ 175°C (TJ)
XP3P010M

XP3P010M

MOSFET P-CH 30V 13.3A 8SO

YAGEO XSEMI

1,000 -
XP3P010M

数据表

XP3P010 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 13.3A (Ta) 4.5V, 10V 10mOhm @ 12A, 10V Surface Mount 3V @ 250µA 54.4 nC @ 4.5 V 30 V ±20V 6080 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
XP10P500N

XP10P500N

MOSFET P-CH 100V 1.2A SOT23

YAGEO XSEMI

897 -
XP10P500N

数据表

XP10P500 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.2A (Ta) 4.5V, 10V 500mOhm @ 1A, 10V Surface Mount 3V @ 250µA 17 nC @ 10 V 100 V ±20V 670 pF @ 50 V - - SOT-23 - 1.38W (Ta) -55°C ~ 150°C (TJ)
MCU12P10-TP

MCU12P10-TP

MOSFET P-CH 100V 12A DPAK

Micro Commercial Co

24,970 -
MCU12P10-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 200mOhm @ 8A, 10V Surface Mount 3V @ 250µA 25 nC @ 10 V 100 V ±20V 1055 pF @ 25 V - - DPAK - 40W -55°C ~ 150°C (TJ)
PJD45P04_L2_00001

PJD45P04_L2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,075 -
PJD45P04_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.5A (Ta), 45A (Tc) 4.5V, 10V 17mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 19 nC @ 4.5 V 40 V ±20V 2030 pF @ 25 V - - TO-252AA - 2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ)
RQ1E050RPHZGTR

RQ1E050RPHZGTR

PCH -30V -5A SMALL SIGNAL MOSFET

Rohm Semiconductor

3,000 -
RQ1E050RPHZGTR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5A (Ta) 4V, 10V 31mOhm @ 5A, 10V Surface Mount 2.5V @ 1mA 13 nC @ 4 V 30 V ±20V 1300 pF @ 10 V - - TSMT8 - 1.1W (Ta) -55°C ~ 150°C
ZVN4210ASTZ

ZVN4210ASTZ

MOSFET N-CH 100V 450MA E-LINE

Diodes Incorporated

2,000 -
ZVN4210ASTZ

数据表

- E-Line-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 450mA (Ta) 5V, 10V 1.5Ohm @ 1.5A, 10V Through Hole 2.4V @ 1mA - 100 V ±20V 100 pF @ 25 V - - E-Line (TO-92 compatible) - 700mW (Ta) -55°C ~ 150°C (TJ)
DMP26M1UFG-7

DMP26M1UFG-7

MOSFET BVDSS: 8V~24V POWERDI3333

Diodes Incorporated

1,970 -
DMP26M1UFG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 71A (Tc) 1.5V, 4.5V 5.5mOhm @ 15A, 4.5V Surface Mount 1V @ 250µA 164 nC @ 10 V 20 V ±10V 5392 pF @ 10 V - - POWERDI3333-8 - 1.67W (Ta), 3W (Tc) -55°C ~ 150°C (TJ)
IAUZ40N06S5N105ATMA1

IAUZ40N06S5N105ATMA1

MOSFET_)40V 60V) PG-TSDSON-8

Infineon Technologies

5,003 -
IAUZ40N06S5N105ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tj) 7V, 10V 10.5mOhm @ 20A, 10V Surface Mount 3.4V @ 13µA 16.3 nC @ 10 V 60 V ±20V 1099 pF @ 30 V AEC-Q101 - PG-TSDSON-8-32 Automotive 42W (Tc) -55°C ~ 175°C (TJ)
FDS7079ZN3

FDS7079ZN3

MOSFET P-CH 30V 16A 8SO

onsemi

6,070 -
FDS7079ZN3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 7.5mOhm @ 16A, 10V Surface Mount 3V @ 250µA 55 nC @ 5 V 30 V ±25V 3630 pF @ 15 V - - 8-SO FLMP - 3.13W (Ta) -55°C ~ 150°C (TJ)
IRFR320TRRPBF

IRFR320TRRPBF

MOSFET N-CH 400V 3.1A DPAK

Vishay Siliconix

9,870 -
IRFR320TRRPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 400 V ±20V 350 pF @ 25 V - - DPAK - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
IRFR320PBF-BE3

IRFR320PBF-BE3

N-CHANNEL 400V

Vishay Siliconix

5,138 -
IRFR320PBF-BE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 400 V ±20V 350 pF @ 25 V - - TO-252AA - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
IRFI614GPBF

IRFI614GPBF

MOSFET N-CH 250V 2.1A TO220-3

Vishay Siliconix

2,084 -
IRFI614GPBF

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.1A (Tc) 10V 2Ohm @ 1.3A, 10V Through Hole 4V @ 250µA 8.2 nC @ 10 V 250 V ±20V 140 pF @ 25 V - - TO-220-3 - 23W (Tc) -55°C ~ 150°C (TJ)
IRF634

IRF634

MOSFET N-CH 250V 8A TO220AB

STMicroelectronics

9,006 -
IRF634

数据表

MESH OVERLAY™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 450mOhm @ 4A, 10V Through Hole 4V @ 250µA 51.8 nC @ 10 V 250 V ±20V 770 pF @ 25 V - - TO-220 - 80W (Tc) 150°C (TJ)
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