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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI7407DN-T1-E3

SI7407DN-T1-E3

MOSFET P-CH 12V 9.9A PPAK 1212-8

Vishay Siliconix

8,043 -
SI7407DN-T1-E3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9.9A (Ta) 1.8V, 4.5V 12mOhm @ 15.6A, 4.5V Surface Mount 1V @ 400µA 59 nC @ 4.5 V 12 V ±8V - - - PowerPAK® 1212-8 - 1.5W (Ta) -55°C ~ 150°C (TJ)
SI7407DN-T1-GE3

SI7407DN-T1-GE3

MOSFET P-CH 12V 9.9A PPAK 1212-8

Vishay Siliconix

8,607 -
SI7407DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9.9A (Ta) 1.8V, 4.5V 12mOhm @ 15.6A, 4.5V Surface Mount 1V @ 400µA 59 nC @ 4.5 V 12 V ±8V - - - PowerPAK® 1212-8 - 1.5W (Ta) -55°C ~ 150°C (TJ)
SIHD7N60ET4-GE3

SIHD7N60ET4-GE3

MOSFET N-CH 600V 7A TO252AA

Vishay Siliconix

8,908 -
SIHD7N60ET4-GE3

数据表

E TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 3.5A, 10V Surface Mount 4V @ 250µA 40 nC @ 10 V 600 V ±30V 680 pF @ 100 V - - TO-252AA - 78W (Tc) -55°C ~ 150°C (TJ)
SIHD7N60ET5-GE3

SIHD7N60ET5-GE3

MOSFET N-CH 600V 7A TO252AA

Vishay Siliconix

8,718 -
SIHD7N60ET5-GE3

数据表

E TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 3.5A, 10V Surface Mount 4V @ 250µA 40 nC @ 10 V 600 V ±30V 680 pF @ 100 V - - TO-252AA - 78W (Tc) -55°C ~ 150°C (TJ)
TLC530TU

TLC530TU

MOSFET N-CH 330V 7A TO220-3

onsemi

6,866 -
TLC530TU

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta) - - Through Hole - - 330 V - - - - TO-220-3 - - -
PH4025L,115

PH4025L,115

MOSFET N-CH 25V 99A LFPAK56

NXP USA Inc.

6,178 -
PH4025L,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 99A (Tc) 4.5V, 10V 4mOhm @ 25A, 10V Surface Mount 2.15V @ 1mA 21.3 nC @ 4.5 V 25 V ±20V 2601 pF @ 12 V - - LFPAK56, Power-SO8 - 46.4W (Tc) -55°C ~ 150°C (TJ)
RQ6C065BCTCR

RQ6C065BCTCR

MOSFET P-CH 20V 6.5A TSMT6

Rohm Semiconductor

6,000 -
RQ6C065BCTCR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 4.5V 21mOhm @ 6.5A, 4.5V Surface Mount 1.2V @ 1mA 22 nC @ 4.5 V 20 V ±8V 1520 pF @ 10 V - - TSMT6 (SC-95) - 1.25W (Tc) -55°C ~ 150°C (TJ)
AOT12N50

AOT12N50

MOSFET N-CH 500V 12A TO220

Alpha & Omega Semiconductor Inc.

8,292 -
AOT12N50

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 520mOhm @ 6A, 10V Through Hole 4.5V @ 250µA 37 nC @ 10 V 500 V ±30V 1633 pF @ 25 V - - TO-220 - 250W (Tc) -55°C ~ 150°C (TJ)
PJD50P04_L2_00001

PJD50P04_L2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,228 -
PJD50P04_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9A (Ta), 50A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 4.5 V 40 V ±20V 2767 pF @ 25 V - - TO-252AA - 2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ)
NTLJS053N12MCLTAG

NTLJS053N12MCLTAG

PTNG 120V LL NCH IN UDFN 2.0X2.0

onsemi

3,000 -
NTLJS053N12MCLTAG

数据表

PowerTrench® 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4.5V, 10V 53mOhm @ 5.2A, 10V Surface Mount 3V @ 30µA 7.8 nC @ 10 V 120 V ±20V 520 pF @ 60 V - - 6-UDFN (2x2) - 620mW (Ta) -55°C ~ 150°C (TJ)
IPD60R600P7SE8228AUMA1

IPD60R600P7SE8228AUMA1

MOSFET N-CH 600V 6A TO252-3

Infineon Technologies

2,276 -
IPD60R600P7SE8228AUMA1

数据表

CoolMOS™ P7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 600mOhm @ 1.7A, 10V Surface Mount 4V @ 80µA 9 nC @ 10 V 600 V ±20V 363 pF @ 400 V - - PG-TO252-3 - 30W (Tc) -40°C ~ 150°C (TJ)
NTTFS080N10GTAG

NTTFS080N10GTAG

100V MVSOA IN U8FL PACKAGE

onsemi

1,253 -
NTTFS080N10GTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.1A (Ta), 16A (Tc) 10V 72mOhm @ 4A, 10V Surface Mount 4V @ 22µA 8.6 nC @ 10 V 100 V ±20V 560.5 pF @ 50 V - - 8-WDFN (3.3x3.3) - 2.5W (Ta), 39W (Tc) -55°C ~ 175°C (TJ)
PJD25N06A-AU_L2_000A1

PJD25N06A-AU_L2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

557 -
PJD25N06A-AU_L2_000A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.5A (Ta), 25A (Tc) 4.5V, 10V 34mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 20 nC @ 10 V 60 V ±20V 1173 pF @ 25 V AEC-Q101 - TO-252AA Automotive 2.4W (Ta), 48.4W (Tc) -55°C ~ 175°C (TJ)
DI050N04PT-AQ

DI050N04PT-AQ

MOSFET, POWERQFN 3X3, 40V, 50A,

Diotec Semiconductor

4,930 -
DI050N04PT-AQ

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 6.5mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 59 nC @ 10 V 40 V ±20V 3255 pF @ 25 V AEC-Q101 - 8-QFN (3x3) Automotive 37W (Tc) -55°C ~ 150°C (TJ)
DI048N04PT-AQ

DI048N04PT-AQ

MOSFET, POWERQFN 3X3, 40V, 48A,

Diotec Semiconductor

4,275 -
DI048N04PT-AQ

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 48A (Tc) 4.5V, 10V 7.6mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 48.5 nC @ 10 V 40 V ±20V 2268 pF @ 25 V AEC-Q101 - 8-QFN (3x3) Automotive 31W (Tc) -55°C ~ 150°C (TJ)
IPD60R2K0C6ATMA1

IPD60R2K0C6ATMA1

MOSFET N-CH 600V 2.4A TO252-3

Infineon Technologies

2,500 -
IPD60R2K0C6ATMA1

数据表

CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 2Ohm @ 760mA, 10V Surface Mount 3.5V @ 60µA 6.7 nC @ 10 V 600 V ±20V 140 pF @ 100 V - - PG-TO252-3 - 22.3W (Tc) -55°C ~ 150°C (TJ)
IPD30N10S3L34ATMA2

IPD30N10S3L34ATMA2

MOSFET_(75V 120V(

Infineon Technologies

2,499 -
IPD30N10S3L34ATMA2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 31mOhm @ 30A, 10V Surface Mount 2.4V @ 29µA 31 nC @ 10 V 100 V ±20V 1976 pF @ 25 V AEC-Q101 - PG-TO252-3-11 Automotive 57W (Tc) -55°C ~ 175°C (TJ)
XP3P7R0EM

XP3P7R0EM

MOSFET P-CH 30V 15.5A 8SO

YAGEO XSEMI

988 -
XP3P7R0EM

数据表

XP3P7R0E 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 15.5A (Ta) 4.5V, 10V 7mOhm @ 17A, 10V Surface Mount 2V @ 250µA 52.8 nC @ 4.5 V 30 V ±25V 6880 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
SISS4410DN-T1-GE3

SISS4410DN-T1-GE3

N-CHANNEL 40 V (D-S) MOSFET POWE

Vishay Siliconix

5,980 -
SISS4410DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 36A (Tc) 7.5V, 10V 9mOhm @ 10A, 10V Surface Mount 2.4V @ 250µA 18 nC @ 10 V 40 V +20V, -16V 850 pF @ 20 V - - PowerPAK® 1212-8 - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ)
PJQ4435EP-AU_R2_002A1

PJQ4435EP-AU_R2_002A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,000 -
PJQ4435EP-AU_R2_002A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 11.2A (Ta), 45A (Tc) 4.5V, 10V 12.5mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 34 nC @ 10 V 30 V ±25V 1610 pF @ 25 V AEC-Q101 - DFN3333-8 Automotive 2.5W (Ta), 41W (Tc) -55°C ~ 175°C (TJ)
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