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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TT8U2TCRMOSFET P-CH 20V 2.4A 8TSST Rohm Semiconductor |
8,745 | - |
|
数据表 |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 2.4A (Ta) | 1.5V, 4.5V | 105mOhm @ 2.4A, 4.5V | Surface Mount | 1V @ 1mA | 6.7 nC @ 4.5 V | 20 V | ±10V | 850 pF @ 10 V | - | Schottky Diode (Isolated) | 8-TSST | - | 1.25W (Ta) | 150°C (TJ) |
|
SCH2080KECSICFET N-CH 1200V 40A TO247 Rohm Semiconductor |
5,423 | - |
|
数据表 |
- | TO-247-3 | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | Through Hole | 4V @ 4.4mA | 106 nC @ 18 V | 1200 V | +22V, -6V | 1850 pF @ 800 V | - | - | TO-247 | - | 262W (Tc) | 175°C (TJ) |
|
SCT2120AFCSICFET N-CH 650V 29A TO220AB Rohm Semiconductor |
2,037 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 29A (Tc) | 18V | 156mOhm @ 10A, 18V | Through Hole | 4V @ 3.3mA | 61 nC @ 18 V | 650 V | +22V, -6V | 1200 pF @ 500 V | - | - | TO-220AB | - | 165W (Tc) | 175°C (TJ) |
|
RDD022N60TLMOSFET N-CH 600V 2A CPT3 Rohm Semiconductor |
9,368 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 10V | 6.7Ohm @ 1A, 10V | Surface Mount | 4.7V @ 1mA | 7 nC @ 10 V | 600 V | ±30V | 175 pF @ 25 V | - | - | CPT3 | - | 20W (Tc) | 150°C (TJ) |
|
R8010ANXMOSFET N-CH 800V 10A TO220FM Rohm Semiconductor |
3,604 | - |
|
数据表 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 560mOhm @ 5A, 10V | Through Hole | 5V @ 1mA | 62 nC @ 10 V | 800 V | ±30V | 1750 pF @ 25 V | - | - | TO-220FM | - | 40W (Tc) | 150°C (TJ) |
|
|
R6020ENZ1C9MOSFET N-CH 600V 20A TO247 Rohm Semiconductor |
9,187 | - |
|
数据表 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | Through Hole | 4V @ 1mA | 60 nC @ 10 V | 600 V | ±20V | 1400 pF @ 25 V | - | - | TO-247 | - | 120W (Tc) | 150°C (TJ) |
|
|
R6024ENZ1C9MOSFET N-CH 600V 24A TO247 Rohm Semiconductor |
9,126 | - |
|
数据表 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | Through Hole | 4V @ 1mA | 70 nC @ 10 V | 600 V | ±20V | 1650 pF @ 25 V | - | - | TO-247 | - | 120W (Tc) | 150°C (TJ) |
|
|
R6025FNZ1C9MOSFET N-CH 600V 25A TO247 Rohm Semiconductor |
8,068 | - |
|
数据表 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 180mOhm @ 12.5A, 10V | Through Hole | 5V @ 1mA | 85 nC @ 10 V | 600 V | ±30V | 3500 pF @ 25 V | - | - | TO-247 | - | 150W (Tc) | 150°C (TJ) |
|
|
R6030ENZ1C9MOSFET N-CH 600V 30A TO247 Rohm Semiconductor |
2,962 | - |
|
数据表 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | Through Hole | 4V @ 1mA | 85 nC @ 10 V | 600 V | ±20V | 2100 pF @ 25 V | - | - | TO-247 | - | 120W (Tc) | 150°C (TJ) |
|
|
R6035ENZ1C9MOSFET N-CH 600V 35A TO247 Rohm Semiconductor |
4,605 | - |
|
数据表 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | Through Hole | 4V @ 1mA | 110 nC @ 10 V | 600 V | ±20V | 2720 pF @ 25 V | - | - | TO-247 | - | 120W (Tc) | 150°C (TJ) |
