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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RRQ045P03HZGTR

RRQ045P03HZGTR

AUTOMOTIVE PCH -30V -4.5A SMALL

Rohm Semiconductor

193 -
RRQ045P03HZGTR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4V, 10V 35mOhm @ 4.5A, 10V Surface Mount 2.5V @ 1mA 14 nC @ 5 V 30 V ±20V 1350 pF @ 10 V AEC-Q101 - TSMT6 (SC-95) Automotive 950mW (Ta) 150°C (TJ)
RD3G400GNTL

RD3G400GNTL

MOSFET N-CH 40V 40A TO252

Rohm Semiconductor

14,833 -
RD3G400GNTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 7.5mOhm @ 40A, 10V Surface Mount 2.5V @ 1mA 19 nC @ 10 V 40 V ±20V 1410 pF @ 20 V - - TO-252 - 26W (Tc) 150°C (TJ)
RSH065N06TB1

RSH065N06TB1

MOSFET N-CH 60V 6.5A 8SOP

Rohm Semiconductor

2,530 -
RSH065N06TB1

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.5A (Ta) 4V, 10V 37mOhm @ 6.5A, 10V Surface Mount 2.5V @ 1mA 16 nC @ 5 V 60 V 20V 900 pF @ 10 V - - 8-SOP - 2W (Ta) 150°C (TJ)
RD3P050SNFRATL

RD3P050SNFRATL

MOSFET N-CH 100V 5A TO252

Rohm Semiconductor

1,263 -
RD3P050SNFRATL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Ta) 4V, 10V 190mOhm @ 5A, 10V Surface Mount 2.5V @ 1mA 14 nC @ 10 V 100 V ±20V 530 pF @ 25 V AEC-Q101 - TO-252 Automotive 15W (Tc) 150°C (TJ)
R6007KNXC7G

R6007KNXC7G

600V 7A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor

945 -
R6007KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 620mOhm @ 2.4A, 10V Through Hole 5V @ 1mA 14.5 nC @ 10 V 600 V ±20V 470 pF @ 25 V - - TO-220FM - 46W (Tc) 150°C (TJ)
RD3H045SPFRATL

RD3H045SPFRATL

MOSFET P-CH 45V 4.5A TO252

Rohm Semiconductor

1,236 -
RD3H045SPFRATL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4V, 10V 155mOhm @ 4.5A, 10V Surface Mount 3V @ 1mA 12 nC @ 5 V 45 V ±20V 550 pF @ 10 V AEC-Q101 - TO-252 Automotive 15W (Tc) 150°C (TJ)
RD3U040CNTL1

RD3U040CNTL1

MOSFET N-CH 250V 4A TO252

Rohm Semiconductor

371 -
RD3U040CNTL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.3Ohm @ 2A, 10V Surface Mount 5.5V @ 1mA 8.5 nC @ 10 V 250 V ±30V 350 pF @ 25 V - - TO-252 - 29W (Tc) -55°C ~ 150°C (TJ)
RQ3E180BNTB1

RQ3E180BNTB1

NCH 30V 39A MIDDLE POWER MOSFET:

Rohm Semiconductor

2,820 -
RQ3E180BNTB1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 39A (Tc) 4.5V, 10V 3.9mOhm @ 18A, 10V Surface Mount 2.5V @ 1mA 72 nC @ 10 V 30 V ±20V 3500 pF @ 15 V - - 8-HSMT (3.2x3) - 2W (Ta), 20W (Tc) 150°C (TJ)
R6509ENXC7G

R6509ENXC7G

650V 9A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor

974 -
R6509ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 9A (Ta) 10V 585mOhm @ 2.8A, 10V Through Hole 4V @ 230µA 24 nC @ 10 V 650 V ±20V 430 pF @ 25 V - - TO-220FM - 48W (Tc) 150°C (TJ)
RXH100N03TB1

RXH100N03TB1

4V DRIVE NCH MOSFET: MOSFETS ARE

Rohm Semiconductor

2,442 -
RXH100N03TB1

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 4V, 10V 13mOhm @ 10A, 10V Surface Mount 2.5V @ 1mA 11 nC @ 5 V 30 V ±20V 800 pF @ 10 V - - 8-SOP - 2W (Ta) 150°C
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