Renesas|场效应晶体管（FETs）、MOSFETs - 页 92

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
HAT1069C0S-EL-E HAT1069C0S - P-CHANNEL POWER MOS Renesas	85,073	-	询价单	数据表	-	-	Bulk	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HAT2202C-EL-E HAT2202C-EL-E - SILICON N CHANNE Renesas	46,797	-	询价单	数据表	-	6-SMD, Flat Leads	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	2.5V, 4.5V	40mOhm @ 1.5A, 4.5V	Surface Mount	1.4V @ 1mA	6 nC @ 4.5 V	20 V	±12V	520 pF @ 10 V	-	-	6-CMFPAK	-	200mW	150°C
HAT2096H-EL-E MOSFET N-CH 30V 40A LFPAK Renesas Electronics Corporation	6,005	-	询价单	数据表	-	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta)	4.5V, 10V	5.3mOhm @ 20A, 10V	Surface Mount	-	40 nC @ 10 V	30 V	±20V	2200 pF @ 10 V	-	-	LFPAK	-	20W (Tc)	150°C (TJ)
HAT2099H-EL-E MOSFET N-CH 30V 50A LFPAK Renesas Electronics Corporation	9,141	-	询价单	数据表	-	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	50A (Ta)	4.5V, 10V	3.7mOhm @ 25A, 10V	Surface Mount	-	75 nC @ 10 V	30 V	±20V	4750 pF @ 10 V	-	-	LFPAK	-	30W (Tc)	150°C (TJ)
HAT2116H-EL-E MOSFET N-CH 30V 30A LFPAK Renesas Electronics Corporation	9,692	-	询价单	数据表	-	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30A (Ta)	4.5V, 10V	8.2mOhm @ 15A, 10V	Surface Mount	-	26 nC @ 10 V	30 V	±20V	1650 pF @ 10 V	-	-	LFPAK	-	15W (Tc)	150°C (TJ)
2SK2109-T1-AZ 2SK2109-T1-AZ - N-CHANNEL MOS FE Renesas	6,956	-	询价单	数据表	-	TO-243AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	500mA (Ta)	4V, 10V	800mOhm @ 300mA, 10V	Surface Mount	2V @ 1mA	-	60 V	±20V	111 pF @ 10 V	-	-	SC-62	-	2W (Ta)	150°C
2SK3447TZ-E 2SK3447TZ-E - SILICON N CHANNEL Renesas	10,000	-	询价单	数据表	-	TO-226-3, TO-92-3 Long Body	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	1A (Ta)	4V, 10V	1.95Ohm @ 500mA, 10V	Through Hole	2.5V @ 1mA	4.5 nC @ 10 V	150 V	±20V	85 pF @ 10 V	-	-	TO-92MOD	-	900mW (Ta)	150°C
2SJ356(0)-T1-AY 2SJ356 - SIGNAL DEVICE Renesas Electronics Corporation	16,300	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK2857-T1-AZ 2SK2857-T1-AZ - N-CHANNEL MOSFET Renesas	14,621	-	询价单	数据表	-	TO-243AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	4A (Ta)	4V, 10V	150mOhm @ 2.5A, 10V	Surface Mount	2V @ 1mA	10.6 nC @ 10 V	60 V	±20V	265 pF @ 10 V	-	-	SC-62	-	2W (Ta)	150°C
UPA1759G-E1-A UPA1759 - SWITCHING N-CHANNEL PO Renesas	5,000	-	询价单	数据表	-	8-PowerSOIC (0.173", 4.40mm Width)	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	4V, 10V	150mOhm @ 2.5A, 10V	Surface Mount	2.5V @ 1mA	8 nC @ 10 V	60 V	±20V	190 pF @ 10 V	-	-	8-PowerSOP	-	2W (Ta)	150°C

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