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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SK1285-AZN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
700 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SK2595AXTB-EN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
13,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
6AM13N-CHANNEL AND P-CHANNEL, MOSFETS Renesas Electronics Corporation |
1,673 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
4AM14P-CHANNEL POWER MOSFET Renesas Electronics Corporation |
202 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SK1628-EN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
3,302 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
H5N3011P80-E#T2N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
4,770 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
2SK1968-EN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
181 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK60S5DPN-00#T2N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
138,686 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RJK60S5DPK-M0#T0MOSFET N-CH 600V 20A TO3PSG Renesas Electronics Corporation |
68,097 | - |
|
数据表 |
- | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | - | 178mOhm @ 10A, 10V | Through Hole | - | 27 nC @ 10 V | 600 V | - | 1600 pF @ 25 V | - | - | TO-3PSG | - | - | - |
|
RJK60S5DPE-00#J3MOSFET N-CH 600V 20A 4LDPAK Renesas Electronics Corporation |
40,000 | - |
|
数据表 |
- | SC-83 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | - | 178mOhm @ 10A, 10V | Surface Mount | - | 27 nC @ 10 V | 600 V | - | 1600 pF @ 25 V | - | - | LDPAK | - | 125W (Tc) | 150°C (TJ) |
