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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
2SK1519-E

2SK1519-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

432 -
2SK1519-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NEM090603M-28-A

NEM090603M-28-A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

251 -
NEM090603M-28-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK1003DPN-A0#T2

RJK1003DPN-A0#T2

MOSFET N-CH 100V 50A TO220ABA

Renesas Electronics Corporation

2,092 -
RJK1003DPN-A0#T2

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Ta) 10V 11mOhm @ 25A, 10V Through Hole 4V @ 1mA 59 nC @ 10 V 100 V ±20V 4150 pF @ 10 V - - TO-220ABA - 125W (Ta) 150°C
RJK0703DPN-A0#T2

RJK0703DPN-A0#T2

MOSFET N-CH 75V 70A TO220ABA

Renesas Electronics Corporation

2,031 -
RJK0703DPN-A0#T2

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Ta) 10V 6.7mOhm @ 35A, 10V Through Hole 4V @ 1mA 56 nC @ 10 V 75 V ±20V 4150 pF @ 10 V - - TO-220ABA - 125W (Ta) 150°C
RJK0603DPN-A0#T2

RJK0603DPN-A0#T2

MOSFET N-CH 60V 80A TO220ABA

Renesas Electronics Corporation

9,878 -
RJK0603DPN-A0#T2

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Ta) 10V 5.2mOhm @ 40A, 10V Through Hole 4V @ 1mA 57 nC @ 10 V 60 V ±20V 4150 pF @ 10 V - - TO-220ABA - 125W (Ta) 150°C
RJK1002DPN-A0#T2

RJK1002DPN-A0#T2

MOSFET N-CH 100V 70A TO220ABA

Renesas Electronics Corporation

9,301 -
RJK1002DPN-A0#T2

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Ta) 10V 7.6mOhm @ 35A, 10V Through Hole 4V @ 1mA 94 nC @ 10 V 100 V ±20V 6450 pF @ 10 V - - TO-220ABA - 150W (Ta) 150°C
2SK1958-T1-A

2SK1958-T1-A

2SK1958-T1-A - N-CHANNEL MOS FET

Renesas

69,067 -
2SK1958-T1-A

数据表

- 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100mA (Ta) 1.5V, 4V 12Ohm @ 10mA, 4V Surface Mount 1.1V @ 10µA - 16 V ±7V 10 pF @ 3 V - - 8-MMPAK - 150mW (Ta) 150°C
2SJ559-T1-A

2SJ559-T1-A

MOSFET P-CH 30V 100MA SC75-3 USM

Renesas Electronics Corporation

9,000 -
2SJ559-T1-A

数据表

- SC-75, SOT-416 Bulk Active P-Channel MOSFET (Metal Oxide) 100mA (Ta) - 13Ohm @ 10mA, 10V Surface Mount 1.7V @ 10µA - 30 V - 5000 pF @ 3 V - - SC-75-3, USM - - -
2SK1581-T1B-A

2SK1581-T1B-A

2SK1581-T1B-A - SWITCHING N-CHAN

Renesas

5,717 -
2SK1581-T1B-A

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Ta) 2.5V, 4V 5Ohm @ 1mA, 4V Surface Mount 1.6V @ 10µA - 16 V ±16V 27 pF @ 3 V - - SC-59 - 200mW (Ta) 150°C
N0300N-T1B-AT

N0300N-T1B-AT

MOSFET N-CH 30V 4.5A SC96-3

Renesas Electronics Corporation

12,000 -
N0300N-T1B-AT

数据表

- SC-96 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4.5V, 10V 50mOhm @ 2A, 10V Surface Mount - - 30 V ±20V 350 pF @ 10 V - - SC-96-3, Thin Mini Mold - 1.25W (Ta) 150°C
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