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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK6002DPH-E0#T2

RJK6002DPH-E0#T2

RJK6002DPH - N CHANNEL MOSFET

Renesas

3,467 -
RJK6002DPH-E0#T2

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 6.8Ohm @ 1A, 10V Through Hole 4.5V @ 1mA 6.2 nC @ 10 V 600 V ±30V 165 pF @ 25 V - - TO-251 - 30W (Tc) 150°C
UPA2730TP-E2-AZ

UPA2730TP-E2-AZ

UPA2730 - POWER FIELD-EFFECT TRA

Renesas

25,000 -
UPA2730TP-E2-AZ

数据表

- 8-PowerSOIC (0.173", 4.40mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20A (Ta), 42A (Tc) 4V, 10V 7mOhm @ 7.5A, 10V Surface Mount 2.5V @ 1mA 97 nC @ 10 V 30 V ±20V 4670 pF @ 10 V - - 8-HSOP - 3W (Ta), 40W (Tc) 150°C
RJK5030DPD-03#J2

RJK5030DPD-03#J2

RJK5030DPD - N CHANNEL MOSFET

Renesas

6,000 -
RJK5030DPD-03#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 1.6Ohm @ 2A, 10V Surface Mount 4.5V @ 1mA - 500 V ±30V 550 pF @ 25 V - - MP-3A - 41.7W (Tc) 150°C
2SJ529L06-E

2SJ529L06-E

2SJ529L06 - P-CHANNEL POWER MOSF

Renesas

55,924 -
2SJ529L06-E

数据表

- TO-251-3 Long Leads, IPak, TO-251AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 10A (Ta) 4V, 10V 160mOhm @ 5A, 10V Through Hole 2V @ 1mA - 60 V ±20V 580 pF @ 10 V - - DPAK(L)-(2) - 20W (Tc) 150°C
UPA2718GR-E1-AT

UPA2718GR-E1-AT

UPA2718 - POWER FIELD-EFFECT TRA

Renesas

2,500 -
UPA2718GR-E1-AT

数据表

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
RJK6011DP3-A0#J2

RJK6011DP3-A0#J2

RJK6011DP3-A0#J2 - SILICON NCH S

Renesas

45,000 -
RJK6011DP3-A0#J2

数据表

- TO-261-4, TO-261AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100mA - - Surface Mount - - 600 V - - - - SOT-223 - - -
UPA2706GR-E1-A

UPA2706GR-E1-A

UPA2706GR-E1-A - MOS FIELD EFFEC

Renesas

5,000 -
UPA2706GR-E1-A

数据表

- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta), 20A (Tc) 4V, 10V 15mOhm @ 5.5A, 10V Surface Mount 2.5V @ 1mA 7.1 nC @ 5 V 30 V ±20V 660 pF @ 10 V - - 8-SOP - 3W (Ta), 15W (Tc) 150°C
UPA2706GR-E2-AT

UPA2706GR-E2-AT

UPA2706GR-E2-AT - MOS FIELD EFFE

Renesas

14,759 -
UPA2706GR-E2-AT

数据表

- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta), 20A (Tc) 4V, 10V 15mOhm @ 5.5A, 10V Surface Mount 2.5V @ 1mA 7.1 nC @ 5 V 30 V ±20V 660 pF @ 10 V - - 8-SOP - 3W (Ta), 15W (Tc) 150°C
UPA2706GR-E1-AT

UPA2706GR-E1-AT

UPA2706GR-E1-AT - MOS FIELD EFFE

Renesas

7,500 -
UPA2706GR-E1-AT

数据表

- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta), 20A (Tc) 4V, 10V 15mOhm @ 5.5A, 10V Surface Mount 2.5V @ 1mA 7.1 nC @ 5 V 30 V ±20V 660 pF @ 10 V - - 8-SOP - 3W (Ta), 15W (Tc) 150°C
2SK3902-ZK-E1-AY

2SK3902-ZK-E1-AY

2SK3902-ZK-E1-AY - SWITCHING N-C

Renesas

2,400 -
2SK3902-ZK-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 21mOhm @ 15A, 10V Surface Mount 2.5V @ 1mA 25 nC @ 10 V 60 V ±20V 1200 pF @ 10 V - - TO-263-3 - 1.5W (Ta), 45W (Tc) 150°C
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