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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NP88N055KHE-E1-AY

NP88N055KHE-E1-AY

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,600 -
NP88N055KHE-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 88A 10V 3.9mOhm @ 44A, 10V Surface Mount 4V @ 250µA 200 nC @ 10 V 55 V ±20V 11400 pF @ 25 V - - TO-263-3 - 1.8W (Ta), 288W (Tc) 175°C
NP88N055MLE-S18-AY

NP88N055MLE-S18-AY

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,350 -
NP88N055MLE-S18-AY

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK1292(02)-S6-AZ

2SK1292(02)-S6-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

663 -
2SK1292(02)-S6-AZ

数据表

- TO-220-3 Isolated Tab Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 4V, 10V 80mOhm @ 10A, 10V Through Hole 2.5V @ 1mA 50 nC @ 10 V 100 V ±20V 2200 pF @ 10 V - - MP-45F - 2W (Ta), 35W (Tc) 150°C
2SJ495-S12-AZ

2SJ495-S12-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

989 -
2SJ495-S12-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK3294-AZ

2SK3294-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

119 -
2SK3294-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0701DPN-E0#T2

RJK0701DPN-E0#T2

MOSFET N-CH 75V 100A TO220AB

Renesas Electronics Corporation

12,407 -
RJK0701DPN-E0#T2

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Ta) - 3.8mOhm @ 50A, 10V Through Hole - 140 nC @ 10 V 75 V - 10 pF @ 10 V - - TO-220AB - 200W (Tc) 150°C (TJ)
RJK1001DPN-E0#T2

RJK1001DPN-E0#T2

MOSFET N-CH 100V 80A TO220AB

Renesas Electronics Corporation

3,363 -
RJK1001DPN-E0#T2

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Ta) - 5.5mOhm @ 40A, 10V Through Hole - 147 nC @ 10 V 100 V - 10000 pF @ 10 V - - TO-220AB - 200W (Tc) 150°C (TJ)
NP161N04TUG-E1-AY

NP161N04TUG-E1-AY

MOSFET N-CH 40V 160A TO263-7

Renesas Electronics Corporation

3,200 -
NP161N04TUG-E1-AY

数据表

- TO-263-7, D2PAK (6 Leads + Tab) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 160A (Tc) - 1.8mOhm @ 80A, 10V Surface Mount 4V @ 250µA 345 nC @ 10 V 40 V - 20250 pF @ 25 V - - TO-263-7 - 1.8W (Ta), 250W (Tc) 175°C (TJ)
UPA1556AH(7)-AZ

UPA1556AH(7)-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

393 -
UPA1556AH(7)-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0701DPP-E0#T2

RJK0701DPP-E0#T2

MOSFET N-CH 75V 100A TO220FP

Renesas Electronics Corporation

347 -
RJK0701DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Ta) - 3.8mOhm @ 50A, 10V Through Hole - 140 nC @ 10 V 75 V - 10000 pF @ 10 V - - TO-220FP - 30W (Tc) 150°C (TJ)
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