Renesas|场效应晶体管（FETs）、MOSFETs - 页 4

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
NP160N055TUK-E1-AY MOSFET N-CH 55V 160A TO263-7 Renesas Electronics Corporation	1,540	-	询价单	数据表	-	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	160A (Tc)	10V	2.1mOhm @ 80A, 10V	Surface Mount	4V @ 250µA	189 nC @ 10 V	55 V	±20V	11250 pF @ 25 V	-	-	TO-263-7	-	1.8W (Ta), 250W (Tc)	175°C (TJ)
RBA160N04AHPF-4UA01#GB0 POWER TRS2 AUTOMOTIVE MOS MP-25L Renesas Electronics Corporation	3,180	-	询价单	数据表	-	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	160A (Tc)	10V	1.25mOhm @ 80A, 10V	Surface Mount	4V @ 250µA	236 nC @ 10 V	40 V	±20V	13200 pF @ 25 V	AEC-Q101	-	TO-263-7	Automotive	1.8W (Ta), 250W (Tc)	175°C
NP110N055PUK-E1-AY MOSFET N-CH 55V 110A TO263 Renesas Electronics Corporation	799	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	110A (Tc)	10V	1.75mOhm @ 55A, 10V	Surface Mount	4V @ 250µA	294 nC @ 10 V	55 V	±20V	16050 pF @ 25 V	-	-	TO-263	-	1.8W (Ta), 348W (Tc)	175°C (TJ)
NP180N055TUK-E1-AY MOSFET N-CH 55V 180A TO263-7 Renesas Electronics Corporation	2,182	-	询价单	数据表	-	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	10V	1.4mOhm @ 90A, 10V	Surface Mount	4V @ 250µA	294 nC @ 10 V	55 V	±20V	16050 pF @ 25 V	-	-	TO-263-7	-	1.8W (Ta), 348W (Tc)	175°C (TJ)
RBA250N04AHPF-4UA01#GB0 POWER TRS2 AUTOMOTIVE MOS MP-25L Renesas Electronics Corporation	2,447	-	询价单	数据表	-	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	250A (Tc)	10V	0.85mOhm @ 125A, 10V	Surface Mount	4V @ 250µA	368 nC @ 10 V	40 V	±20V	19350 pF @ 25 V	AEC-Q101	-	TO-263-7	Automotive	1.8W (Ta), 348W (Tc)	175°C
NP110N04PUK-E1-AY MOSFET N-CH 40V 110A TO263-3 Renesas Electronics Corporation	1,518	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	110A (Tc)	10V	1.4mOhm @ 55A, 10V	Surface Mount	4V @ 250µA	297 nC @ 10 V	40 V	±20V	15750 pF @ 25 V	-	-	TO-263-3	-	1.8W (Ta), 348W (Tc)	175°C (TJ)
NP180N04TUK-E1-AY MOSFET N-CH 40V 180A TO263-7 Renesas Electronics Corporation	1,590	-	询价单	数据表	-	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	10V	1.05mOhm @ 90A, 10V	Surface Mount	4V @ 250µA	297 nC @ 10 V	40 V	±20V	15750 pF @ 25 V	-	-	TO-263-7	-	1.8W (Ta), 348W (Tc)	175°C (TJ)
RBA250N10CHPF-4UA02#GB0 MP-25LZU Renesas Electronics Corporation	780	-	询价单	数据表	-	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	250A (Ta)	10V	2.4mOhm @ 125A, 10V	Surface Mount	3.8V @ 250µA	190 nC @ 10 V	100 V	±20V	9500 pF @ 50 V	-	-	TO-263-7	-	1.8W (Ta), 348W (Tc)	175°C
2SK3812-ZP-E1-AZ MP-25LZP Renesas Electronics Corporation	1,357	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	110A (Tc)	4.5V, 10V	2.8mOhm @ 55A, 10V	Surface Mount	2.5V @ 1mA	250 nC @ 10 V	60 V	±20V	16800 pF @ 10 V	-	-	TO-263-3	-	1.5W (Ta), 213W (Tc)	150°C
HAT2261H-EL-E MOSFET N-CH 30V 45A 5LFPAK Renesas Electronics Corporation	5,586	-	询价单	数据表	-	SC-100, SOT-669	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	45A (Ta)	4.5V, 10V	3.8mOhm @ 22.5A, 10V	Surface Mount	-	27 nC @ 4.5 V	30 V	±20V	4400 pF @ 10 V	-	-	5-LFPAK	-	25W (Tc)	150°C (TJ)

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