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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NP179N055TUK-E1-AY

NP179N055TUK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics Corporation

1,600 -
NP179N055TUK-E1-AY

数据表

- TO-263-7, D2PAK (6 Leads + Tab) Tray Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 1.75mOhm @ 90A, 10V Surface Mount 4V @ 250µA 240 nC @ 10 V 55 V ±20V 13950 pF @ 25 V AEC-Q101 - TO-263-7 Automotive 1.8W (Ta), 288W (Tc) 175°C
RJK6006DPP-A0#T2

RJK6006DPP-A0#T2

MOSFET N-CH 600V 10A TO220FP

Renesas Electronics Corporation

1,711 -
RJK6006DPP-A0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 920mOhm @ 5A, 10V Through Hole - 30 nC @ 10 V 600 V ±30V 1100 pF @ 25 V - - TO-220FP - 30W (Ta) 150°C
NP75N055YUK-E1-AY

NP75N055YUK-E1-AY

POWER TRS2

Renesas Electronics Corporation

5,000 -
NP75N055YUK-E1-AY

数据表

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4.5mOhm @ 38A, 10V Surface Mount 4V @ 250µA 83 nC @ 10 V 55 V ±20V 5300 pF @ 25 V AEC-Q101 - 8-HSON (5x5.4) Automotive 1W (Ta), 138W (Tc) 175°C
NP89N06PDK-E1-AY

NP89N06PDK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics Corporation

1,600 -
NP89N06PDK-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 5.3mOhm @ 45A, 10V Surface Mount 2.5V @ 250µA 95 nC @ 10 V 60 V ±20V 6000 pF @ 25 V AEC-Q101 - TO-263-3 Automotive 1.8W (Ta), 147W (Tc) 175°C
RJK1054DPB-00#J5

RJK1054DPB-00#J5

MOSFET N-CH 100V 20A LFPAK

Renesas Electronics Corporation

2,475 -
RJK1054DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 10V 22mOhm @ 10A, 10V Surface Mount - 27 nC @ 10 V 100 V ±20V 2000 pF @ 10 V - - LFPAK - 55W (Tc) 150°C (TJ)
NP50P04SLG-E1-AY

NP50P04SLG-E1-AY

MP-3ZK

Renesas Electronics Corporation

3,960 -
NP50P04SLG-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 50A (Ta) 4.5V, 10V 9.6mOhm @ 25A, 10V Surface Mount 2.5V @ 250µA 150 nC @ 10 V 40 V ±20V 5700 pF @ 10 V - - TO-252 (MP-3ZK) - 1.2W (Ta), 84W (Tc) 175°C
N0436N-ZK-E1-AY

N0436N-ZK-E1-AY

ABU / MOSFET

Renesas Electronics Corporation

5,857 -
N0436N-ZK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 56A (Ta) 10V 4.7mOhm @ 28A, 10V Surface Mount 4V @ 1mA 62 nC @ 10 V 40 V ±20V 3200 pF @ 25 V - - TO-252 - 1W (Ta), 87.4W (Tc) 150°C
RJK5035DPP-A0#T2

RJK5035DPP-A0#T2

MOSFET N-CH 600V 5A TO220FP

Renesas Electronics Corporation

2,015 -
RJK5035DPP-A0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 1.6Ohm @ 2.5A, 10V Through Hole - 19 nC @ 10 V 600 V ±30V 600 pF @ 25 V - - TO-220FP - 29W (Ta) 150°C
NP89N055PUK-E1-AY

NP89N055PUK-E1-AY

MOSFET N-CH 55V 90A TO263-3

Renesas Electronics Corporation

3,175 -
NP89N055PUK-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 4mOhm @ 45A, 10V Surface Mount 4V @ 250µA 102 nC @ 10 V 55 V ±20V 6000 pF @ 25 V - - TO-263-3 - 1.8W (Ta), 147W (Tc) 175°C (TJ)
RJK0854DPB-00#J5

RJK0854DPB-00#J5

MOSFET N-CH 80V 25A LFPAK

Renesas Electronics Corporation

2,540 -
RJK0854DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Ta) 10V 13mOhm @ 12.5A, 10V Surface Mount - 27 nC @ 10 V 80 V ±20V 2000 pF @ 10 V - - LFPAK - 55W (Tc) 150°C (TJ)
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