Renesas|场效应晶体管（FETs）、MOSFETs - 页 3

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
NP89N04PUK-E1-AY MOSFET N-CH 40V 90A TO263 Renesas Electronics Corporation	3,075	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	2.95mOhm @ 45A, 5V	Surface Mount	4V @ 250µA	102 nC @ 10 V	40 V	±20V	5850 pF @ 25 V	-	-	TO-263	-	1.8W (Ta), 147W (Tc)	175°C (TJ)
RJK1003DPP-A0#T2 MOSFET N-CH 100V 50A TO220FPA Renesas Electronics Corporation	9,463	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	50A (Ta)	10V	11mOhm @ 25A, 10V	Through Hole	4V @ 1mA	59 nC @ 10 V	100 V	±20V	4150 pF @ 10 V	-	-	TO-220ABA	-	25W (Ta)	150°C
RJK0703DPP-A0#T2 MOSFET N-CH 75V 70A TO220FPA Renesas Electronics Corporation	8,351	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Ta)	10V	6.7mOhm @ 35A, 10V	Through Hole	4V @ 1mA	56 nC @ 10 V	75 V	±20V	4150 pF @ 10 V	-	-	TO-220ABA	-	25W (Ta)	150°C
RJK1055DPB-00#J5 MOSFET N-CH 100V 23A LFPAK Renesas Electronics Corporation	7,335	-	询价单	数据表	-	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	23A (Ta)	10V	17mOhm @ 11.5A, 10V	Surface Mount	-	35 nC @ 10 V	100 V	±20V	2550 pF @ 10 V	-	-	LFPAK	-	60W (Tc)	150°C (TJ)
RJK0853DPB-00#J5 MOSFET N-CH 80V 40A LFPAK Renesas Electronics Corporation	4,910	-	询价单	数据表	-	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta)	4.5V, 10V	8mOhm @ 20A, 10V	Surface Mount	-	40 nC @ 4.5 V	80 V	±20V	6170 pF @ 10 V	-	-	LFPAK	-	65W (Tc)	150°C (TJ)
NP100N055PUK-E1-AY MOSFET N-CH 55V 100A TO263 Renesas Electronics Corporation	1,709	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.25mOhm @ 50A, 10V	Surface Mount	4V @ 250µA	120 nC @ 10 V	55 V	±20V	7350 pF @ 25 V	-	-	TO-263 (D2PAK)	-	1.8W (Ta), 176W (Tc)	175°C (TJ)
NP50P04KDG-E1-AY MOSFET P-CH 40V 50A TO263 Renesas Electronics Corporation	3,057	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	10mOhm @ 25A, 10V	Surface Mount	2.5V @ 1mA	100 nC @ 10 V	40 V	±20V	5100 pF @ 10 V	-	-	TO-263	-	1.8W (Ta), 90W (Tc)	175°C (TJ)
NP179N04TUK-E1-AY AUTOMOTIVE MOS Renesas Electronics Corporation	790	-	询价单	数据表	-	TO-263-7, D2PAK (6 Leads + Tab)	Strip	Active	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	10V	1.25mOhm @ 90A, 10V	Surface Mount	4V @ 250µA	240 nC @ 10 V	40 V	±20V	13350 pF @ 25 V	AEC-Q101	-	TO-263-7	Automotive	1.8W (Ta), 288W (Tc)	175°C
NP109N055PUK-E1-AY MOSFET N-CH 55V 110A TO263 Renesas Electronics Corporation	1,560	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	110A (Tc)	10V	2.2mOhm @ 55A, 10V	Surface Mount	4V @ 250µA	189 nC @ 10 V	55 V	±20V	11250 pF @ 25 V	-	-	TO-263	-	1.8W (Ta), 250W (Tc)	175°C (TJ)
NP83P04PDG-E1-AY MOSFET P-CH 40V 83A TO-263 Renesas Electronics Corporation	1,418	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	83A (Tc)	-	5.3mOhm @ 41.5A, 10V	Surface Mount	2.5V @ 1mA	200 nC @ 10 V	40 V	-	9820 pF @ 10 V	-	-	TO-263	-	-	-

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