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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK03D5DPA-00#J53

RJK03D5DPA-00#J53

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

138,000 -
RJK03D5DPA-00#J53

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0394DPA-00#J5A

RJK0394DPA-00#J5A

MOSFET N-CH 30V 35A 8WPAK

Renesas Electronics Corporation

96,000 -
RJK0394DPA-00#J5A

数据表

- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 35A (Ta) - 5.3mOhm @ 17.5A, 10V Surface Mount - 15.5 nC @ 4.5 V 30 V - 2430 pF @ 10 V - - 8-WPAK - 35W (Tc) 150°C (TJ)
RJK0351DPA-02#J0

RJK0351DPA-02#J0

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

50,000 -
RJK0351DPA-02#J0

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0394DPA-02#J53

RJK0394DPA-02#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics Corporation

36,000 -
RJK0394DPA-02#J53

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
HAT2199R-EL-E

HAT2199R-EL-E

MOSFET N-CH 30V 11A 8SOP

Renesas Electronics Corporation

25,000 -
HAT2199R-EL-E

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) - 16.5mOhm @ 5.5A, 10V Surface Mount - 7.5 nC @ 4.5 V 30 V - 1060 pF @ 10 V - - 8-SOP - 2W (Ta) 150°C (TJ)
RJK0366DPA-00#J0

RJK0366DPA-00#J0

MOSFET N-CH 30V 25A 8WPAK

Renesas Electronics Corporation

19,800 -
RJK0366DPA-00#J0

数据表

- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 25A (Ta) - 11.1mOhm @ 12.5A, 10V Surface Mount - 6.8 nC @ 10 V 30 V - 1010 pF @ 10 V - - 8-WPAK (3) - 30W (Tc) 150°C (TJ)
RJK03D2DPA-00#J5A

RJK03D2DPA-00#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

15,000 -
RJK03D2DPA-00#J5A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0351DPA-03#J0B

RJK0351DPA-03#J0B

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

7,500 -
RJK0351DPA-03#J0B

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0366DPA-02#J0B

RJK0366DPA-02#J0B

MOSFET N-CH 30V 25A 8WPAK

Renesas Electronics Corporation

5,000 -
RJK0366DPA-02#J0B

数据表

- 8-WFDFN Exposed Pad Bulk Obsolete N-Channel MOSFET (Metal Oxide) 25A (Ta) - 10mOhm @ 12.5A, 10V Surface Mount - 6.8 nC @ 4.5 V 30 V - 1010 pF @ 10 V - - 8-WPAK - 30W (Tc) 150°C (TJ)
2SK3305B-S19-AY

2SK3305B-S19-AY

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

3,835 -
2SK3305B-S19-AY

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
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