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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NP22N055ILE-E1-AY

NP22N055ILE-E1-AY

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

18,000 -
NP22N055ILE-E1-AY

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK03S3DPA-00#J5A

RJK03S3DPA-00#J5A

N-CHANNEL MOSFET

Renesas Electronics Corporation

9,000 -
RJK03S3DPA-00#J5A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK2851TZ-E

2SK2851TZ-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

5,000 -
2SK2851TZ-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NP22N055HLE-AY

NP22N055HLE-AY

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

3,000 -
NP22N055HLE-AY

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NP32N055SHE-E1-AY

NP32N055SHE-E1-AY

MOSFET N-CH 55V 32A TO252

Renesas Electronics Corporation

2,500 -
NP32N055SHE-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) - 25mOhm @ 16A, 10V Surface Mount 4V @ 250µA 32 nC @ 10 V 55 V - 1600 pF @ 25 V - - TO-252 (MP-3ZK) - 1.2W (Ta), 66W (Tc) 175°C (TJ)
RJK0348DSP-00#J0

RJK0348DSP-00#J0

MOSFET N-CH 30V 22A 8SOP

Renesas Electronics Corporation

2,500 -
RJK0348DSP-00#J0

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 22A (Ta) - 3.4mOhm @ 11A, 10V Surface Mount - 34 nC @ 4.5 V 30 V - 5100 pF @ 10 V - - 8-SOP - 2.5W (Ta) 150°C (TJ)
RJK0348DSP-WS#J0

RJK0348DSP-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,200 -
RJK0348DSP-WS#J0

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NP22N055HLE-S16-AY

NP22N055HLE-S16-AY

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,049 -
NP22N055HLE-S16-AY

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0301DPB-02#J0

RJK0301DPB-02#J0

MOSFET N-CH 30V 60A 5LFPAK

Renesas Electronics Corporation

7,403 -
RJK0301DPB-02#J0

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Ta) 4.5V, 10V 2.8mOhm @ 30A, 10V Surface Mount - 32 nC @ 4.5 V 30 V +16V, -12V 5000 pF @ 10 V - - LFPAK - 65W (Tc) 150°C (TJ)
RJK1562DJE-00#Z0

RJK1562DJE-00#Z0

MOSFET N-CH 150V 1A TO92MOD

Renesas Electronics Corporation

102,357 -
RJK1562DJE-00#Z0

数据表

- TO-226-3, TO-92-3 Long Body, Formed Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 1A (Ta) - 1.4Ohm @ 500mA, 4V Through Hole - 3 nC @ 4 V 150 V - 300 pF @ 25 V - - TO-92MOD - 900mW (Ta) 150°C (TJ)
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