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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
2SK4080-ZK-E1-AY

2SK4080-ZK-E1-AY

MOSFET N-CH 30V 48A TO252

Renesas Electronics Corporation

2,500 -
2SK4080-ZK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 48A (Tc) - 9mOhm @ 24A, 10V Surface Mount 2.5V @ 1mA 32 nC @ 12 V 30 V - 1670 pF @ 10 V - - TO-252 (MP-3Z) - 1W (Ta), 29W (Tc) 150°C (TJ)
RJK03P1DPA-00#J5A

RJK03P1DPA-00#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

954,000 -
RJK03P1DPA-00#J5A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK03N4DPA-02#J5A

RJK03N4DPA-02#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

312,000 -
RJK03N4DPA-02#J5A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
HAT2266H-EL-E

HAT2266H-EL-E

MOSFET N-CH 60V 30A LFPAK

Renesas Electronics Corporation

9,616 -
HAT2266H-EL-E

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta) 4.5V, 10V 12mOhm @ 15A, 10V Surface Mount 2.5V @ 1mA 25 nC @ 4.5 V 60 V ±20V 3600 pF @ 10 V - - LFPAK - 23W (Tc) 150°C (TJ)
UPA2211T1M-T1-AT

UPA2211T1M-T1-AT

MOSFET P-CH 12V 7.5A 8VSOF

Renesas Electronics Corporation

15,000 -
UPA2211T1M-T1-AT

数据表

- 8-SMD, Flat Lead Bulk Obsolete P-Channel MOSFET (Metal Oxide) 7.5A (Ta) - 25mOhm @ 7.5A, 4.5V Surface Mount 1.5V @ 1mA 14.9 nC @ 4.5 V 12 V - 1350 pF @ 10 V - - 8-VSOF - 1.1W (Ta) 150°C (TJ)
UPA2800T1L-E1-AY

UPA2800T1L-E1-AY

MOSFET N-CH 30V 17A 8DFN

Renesas Electronics Corporation

6,000 -
UPA2800T1L-E1-AY

数据表

- 8-VDFN Exposed Pad Bulk Obsolete N-Channel MOSFET (Metal Oxide) 17A (Ta) - 7.3mOhm @ 17A, 10V Surface Mount 2.5V @ 1mA 17 nC @ 5 V 30 V - 1770 pF @ 15 V - - 8-DFN3333 (3.3x3.3) - - -
2SK2054(0)T1-AZ

2SK2054(0)T1-AZ

N-CHANNEL MOSFET

Renesas Electronics Corporation

5,800 -
2SK2054(0)T1-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SJ356-T1-AZ

2SJ356-T1-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

4,182 -
2SJ356-T1-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NP80N04PLG-E1B-AY

NP80N04PLG-E1B-AY

MOSFET N-CH 40V 80A TO263

Renesas Electronics Corporation

9,631 -
NP80N04PLG-E1B-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 4.5mOhm @ 40A, 10V Surface Mount 2.5V @ 250µA 135 nC @ 10 V 40 V ±20V 6900 pF @ 25 V - - TO-263 - 1.8W (Ta), 115W (Tc) 175°C (TJ)
NP80N06PLG-E1B-AY

NP80N06PLG-E1B-AY

MOSFET N-CH 60V 80A TO263

Renesas Electronics Corporation

8,083 -
NP80N06PLG-E1B-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 8.3mOhm @ 40A, 10V Surface Mount 2.5V @ 250µA 128 nC @ 10 V 60 V ±20V 6900 pF @ 25 V - - TO-263 - 1.8W (Ta), 115W (Tc) 175°C (TJ)
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