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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK0211DPA-00#J5A

RJK0211DPA-00#J5A

N-CHANNEL POWER SWITCHING

Renesas Electronics Corporation

33,000 -
RJK0211DPA-00#J5A

数据表

- 8-PowerVDFN Bulk Active - - 30A (Tj) - - Surface Mount - - - - - - - WPAK(3) - - -
UPA2734GR-E2-AT

UPA2734GR-E2-AT

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

25,000 -
UPA2734GR-E2-AT

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK4077-ZK-E1-AY

2SK4077-ZK-E1-AY

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

7,500 -
2SK4077-ZK-E1-AY

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA2734GR-E1-AT

UPA2734GR-E1-AT

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

5,000 -
UPA2734GR-E1-AT

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA2727UT1A-E1-AY

UPA2727UT1A-E1-AY

MOSFET N-CH 30V 16A 8DFN

Renesas Electronics Corporation

3,000 -
UPA2727UT1A-E1-AY

数据表

- 8-VDFN Exposed Pad Bulk Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) - 9.6mOhm @ 8A, 10V Surface Mount 2.5V @ 1mA 11 nC @ 5 V 30 V - 1170 pF @ 15 V - - 8-DFN3333 (3.3x3.3) - - -
NP109N04PUK-E1-AY

NP109N04PUK-E1-AY

MOSFET N-CH 40V 110A TO263

Renesas Electronics Corporation

4,406 -
NP109N04PUK-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 1.75mOhm @ 55A, 10V Surface Mount 4V @ 250µA 189 nC @ 10 V 40 V ±20V 10800 pF @ 25 V - - TO-263 (D2PAK) - 1.8W (Ta), 250W (Tc) 175°C (TJ)
NP90N04VUG-E1-AY

NP90N04VUG-E1-AY

MOSFET N-CH 40V 90A TO252

Renesas Electronics Corporation

2,808 -
NP90N04VUG-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 4mOhm @ 45A, 10V Surface Mount 4V @ 250µA 135 nC @ 10 V 40 V ±20V 7500 pF @ 25 V - - TO-252 - 1.2W (Ta), 105W (Tc) 175°C (TJ)
UPA2200T1M-T2-AT

UPA2200T1M-T2-AT

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,086,000 -
UPA2200T1M-T2-AT

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA2210T1M-T1-AT

UPA2210T1M-T1-AT

MOSFET P-CH 20V 7.2A 8VSOF

Renesas Electronics Corporation

180,000 -
UPA2210T1M-T1-AT

数据表

- 8-SMD, Flat Lead Bulk Obsolete P-Channel MOSFET (Metal Oxide) 7.2A (Ta) - 29mOhm @ 7.2A, 4.5V Surface Mount 1.5V @ 1mA 16.3 nC @ 4.5 V 20 V - 1350 pF @ 10 V - - 8-VSOF - 1.1W (Ta) 150°C (TJ)
UPA2210T1M-T2-AT

UPA2210T1M-T2-AT

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

180,000 -
UPA2210T1M-T2-AT

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
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