富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PHP83N03LT,127

PHP83N03LT,127

MOSFET N-CH 25V 75A TO220AB

NXP USA Inc.

7,712 -
PHP83N03LT,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 5V, 10V 9mOhm @ 25A, 10V Through Hole 2V @ 1mA 33 nC @ 5 V 25 V ±15V 1660 pF @ 25 V - - TO-220AB - 115W (Tc) -55°C ~ 175°C (TJ)
PHT2NQ10T,135

PHT2NQ10T,135

MOSFET N-CH 100V 2.5A SOT223

NXP USA Inc.

8,867 -
PHT2NQ10T,135

数据表

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 430mOhm @ 1.75A, 10V Surface Mount 4V @ 1mA 5.1 nC @ 10 V 100 V ±20V 160 pF @ 25 V - - SC-73 - 6.25W (Tc) -65°C ~ 150°C (TJ)
PHU101NQ03LT,127

PHU101NQ03LT,127

MOSFET N-CH 30V 75A IPAK

NXP USA Inc.

9,136 -
PHU101NQ03LT,127

数据表

TrenchMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 5V, 10V 5.5mOhm @ 25A, 10V Through Hole 2.5V @ 1mA 23 nC @ 5 V 30 V ±20V 2180 pF @ 25 V - - IPAK - 166W (Tc) -55°C ~ 175°C (TJ)
PHU108NQ03LT,127

PHU108NQ03LT,127

MOSFET N-CH 25V 75A IPAK

NXP USA Inc.

9,078 -
PHU108NQ03LT,127

数据表

TrenchMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 5V, 10V 6mOhm @ 25A, 10V Through Hole 2V @ 1mA 16.3 nC @ 4.5 V 25 V ±20V 1375 pF @ 12 V - - IPAK - 187W (Tc) -55°C ~ 175°C (TJ)
PHU11NQ10T,127

PHU11NQ10T,127

MOSFET N-CH 100V 10.9A IPAK

NXP USA Inc.

7,982 -
PHU11NQ10T,127

数据表

TrenchMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 10.9A (Tc) 10V 180mOhm @ 9A, 10V Through Hole 4V @ 1mA 14.7 nC @ 10 V 100 V ±20V 360 pF @ 25 V - - IPAK - 57.7W (Tc) -55°C ~ 175°C (TJ)
PHU66NQ03LT,127

PHU66NQ03LT,127

MOSFET N-CH 25V 66A IPAK

NXP USA Inc.

2,675 -
PHU66NQ03LT,127

数据表

TrenchMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 66A (Tc) 5V, 10V 10.5mOhm @ 25A, 10V Through Hole 2V @ 1mA 12 nC @ 5 V 25 V ±20V 860 pF @ 25 V - - IPAK - 93W (Tc) -55°C ~ 175°C (TJ)
PHU78NQ03LT,127

PHU78NQ03LT,127

MOSFET N-CH 25V 75A IPAK

NXP USA Inc.

3,432 -
PHU78NQ03LT,127

数据表

TrenchMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 5V, 10V 9mOhm @ 25A, 10V Through Hole 2V @ 1mA 11 nC @ 4.5 V 25 V ±20V 970 pF @ 12 V - - IPAK - 107W (Tc) -55°C ~ 175°C (TJ)
PHW80NQ10T,127

PHW80NQ10T,127

MOSFET N-CH 100V 80A TO247-3

NXP USA Inc.

7,137 -
PHW80NQ10T,127

数据表

TrenchMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 15mOhm @ 25A, 10V Through Hole 4V @ 1mA 109 nC @ 10 V 100 V ±20V 4720 pF @ 25 V - - TO-247 - 263W (Tc) -55°C ~ 175°C (TJ)
PHX18NQ11T,127

PHX18NQ11T,127

MOSFET N-CH 110V 12.5A TO220F

NXP USA Inc.

7,386 -
PHX18NQ11T,127

数据表

TrenchMOS™ TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 12.5A (Tc) 10V 90mOhm @ 9A, 10V Through Hole 4V @ 1mA 21 nC @ 10 V 110 V ±20V 635 pF @ 25 V - - TO-220F - 31.2W (Tc) -55°C ~ 150°C (TJ)
PHX20N06T,127

PHX20N06T,127

MOSFET N-CH 55V 12.9A TO220F

NXP USA Inc.

5,522 -
PHX20N06T,127

数据表

TrenchMOS™ TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 12.9A (Tc) 10V 75mOhm @ 10A, 10V Through Hole 4V @ 1mA 9.8 nC @ 10 V 55 V ±20V 320 pF @ 25 V - - TO-220F - 23W (Tc) -55°C ~ 150°C (TJ)
共 616 条记录«上一页1... 3637383940414243...62下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户