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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PHD98N03LT,118

PHD98N03LT,118

MOSFET N-CH 25V 75A DPAK

NXP USA Inc.

2,404 -
PHD98N03LT,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 5V, 10V 5.9mOhm @ 25A, 10V Surface Mount 2V @ 1mA 40 nC @ 5 V 25 V ±20V 3000 pF @ 20 V - - DPAK - 111W (Tc) -55°C ~ 175°C (TJ)
PHK12NQ10T,518

PHK12NQ10T,518

MOSFET N-CH 100V 11.6A 8SO

NXP USA Inc.

4,303 -
PHK12NQ10T,518

数据表

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11.6A (Tc) 10V 28mOhm @ 6A, 10V Surface Mount 4V @ 1mA 35 nC @ 10 V 100 V ±20V 1965 pF @ 25 V - - 8-SO - 8.9W (Tc) -55°C ~ 150°C (TJ)
PHK28NQ03LT,518

PHK28NQ03LT,518

MOSFET N-CH 30V 23.7A 8SO

NXP USA Inc.

4,305 -
PHK28NQ03LT,518

数据表

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 23.7A (Tc) 4.5V, 10V 6.5mOhm @ 14A, 10V Surface Mount 2V @ 1mA 30.3 nC @ 4.5 V 30 V ±20V 2800 pF @ 20 V - - 8-SO - 6.25W (Tc) -55°C ~ 150°C (TJ)
PHM12NQ20T,518

PHM12NQ20T,518

MOSFET N-CH 200V 14.4A 8HVSON

NXP USA Inc.

2,175 -
PHM12NQ20T,518

数据表

TrenchMOS™ 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14.4A (Tc) 5V, 10V 130mOhm @ 12A, 10V Surface Mount 4V @ 1mA 26 nC @ 10 V 200 V ±20V 1230 pF @ 25 V - - 8-HVSON (5x6) - 62.5W (Tc) -55°C ~ 150°C (TJ)
PHM15NQ20T,518

PHM15NQ20T,518

MOSFET N-CH 200V 17.5A 8HVSON

NXP USA Inc.

5,021 -
PHM15NQ20T,518

数据表

TrenchMOS™ 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17.5A (Tc) 10V 85mOhm @ 15A, 10V Surface Mount 4V @ 1mA 40 nC @ 10 V 200 V ±20V 2170 pF @ 30 V - - 8-HVSON (5x6) - 62.5W (Tc) -55°C ~ 150°C (TJ)
PHM18NQ15T,518

PHM18NQ15T,518

MOSFET N-CH 150V 19A 8HVSON

NXP USA Inc.

8,581 -
PHM18NQ15T,518

数据表

TrenchMOS™ 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 19A (Tc) 5V, 10V 75mOhm @ 12A, 10V Surface Mount 4V @ 1mA 26.4 nC @ 10 V 150 V ±20V 1150 pF @ 25 V - - 8-HVSON (5x6) - 62.5W (Tc) -55°C ~ 150°C (TJ)
PHM21NQ15T,518

PHM21NQ15T,518

MOSFET N-CH 150V 22.2A 8HVSON

NXP USA Inc.

9,843 -
PHM21NQ15T,518

数据表

TrenchMOS™ 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22.2A (Tc) 5V, 10V 55mOhm @ 15A, 10V Surface Mount 4V @ 1mA 36.2 nC @ 10 V 150 V ±20V 2080 pF @ 25 V - - 8-HVSON (5x6) - 62.5W (Tc) -55°C ~ 150°C (TJ)
PHM25NQ10T,518

PHM25NQ10T,518

MOSFET N-CH 100V 30.7A 8HVSON

NXP USA Inc.

5,471 -
PHM25NQ10T,518

数据表

TrenchMOS™ 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30.7A (Tc) 10V 30mOhm @ 10A, 10V Surface Mount 4V @ 1mA 26.6 nC @ 10 V 100 V ±20V 1800 pF @ 20 V - - 8-HVSON (5x6) - 62.5W (Tc) -55°C ~ 150°C (TJ)
PHP101NQ03LT,127

PHP101NQ03LT,127

MOSFET N-CH 30V 75A TO220AB

NXP USA Inc.

3,828 -
PHP101NQ03LT,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 5V, 10V 5.5mOhm @ 25A, 10V Through Hole 2.5V @ 1mA 23 nC @ 5 V 30 V ±20V 2180 pF @ 25 V - - TO-220AB - 166W (Tc) -55°C ~ 175°C (TJ)
PHP101NQ04T,127

PHP101NQ04T,127

MOSFET N-CH 40V 75A TO220AB

NXP USA Inc.

8,728 -
PHP101NQ04T,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 8mOhm @ 25A, 10V Through Hole 4V @ 1mA 36.6 nC @ 10 V 40 V ±20V 2020 pF @ 25 V - - TO-220AB - 157W (Tc) -55°C ~ 175°C (TJ)
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