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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PMR780SN,115

PMR780SN,115

MOSFET N-CH 60V 550MA SC75

NXP USA Inc.

5,572 -
PMR780SN,115

数据表

TrenchMOS™ SC-75, SOT-416 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 550mA (Ta) 4.5V, 10V 920mOhm @ 300mA, 10V Surface Mount 3V @ 250µA 1.05 nC @ 10 V 60 V ±20V 23 pF @ 30 V - - SC-75 - 530mW (Tc) -55°C ~ 150°C (TJ)
PMV117EN,215

PMV117EN,215

MOSFET N-CH 30V 2.5A TO236AB

NXP USA Inc.

7,021 -
PMV117EN,215

数据表

TrenchMOS™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 4.5V, 10V 117mOhm @ 500mA, 10V Surface Mount 2V @ 1mA 4.6 nC @ 10 V 30 V ±20V 147 pF @ 10 V - - SOT-23 (TO-236AB) - 830mW (Tc) -65°C ~ 150°C (TJ)
PMV56XN,215

PMV56XN,215

MOSFET N-CH 20V 3.76A TO236AB

NXP USA Inc.

8,386 -
PMV56XN,215

数据表

TrenchMOS™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.76A (Tc) 2.5V, 4.5V 85mOhm @ 3.6A, 4.5V Surface Mount 650mV @ 1mA (Min) 5.4 nC @ 4.5 V 20 V ±8V 230 pF @ 10 V - - SOT-23 (TO-236AB) - 1.92W (Tc) -65°C ~ 150°C (TJ)
PSMN004-36B,118

PSMN004-36B,118

MOSFET N-CH 36V 75A D2PAK

NXP USA Inc.

2,871 -
PSMN004-36B,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 4mOhm @ 25A, 10V Surface Mount 2V @ 1mA 97 nC @ 5 V 36 V ±15V 6000 pF @ 20 V - - D2PAK - 230W (Tc) -55°C ~ 175°C (TJ)
PSMN004-55W,127

PSMN004-55W,127

MOSFET N-CH 55V 100A TO247-3

NXP USA Inc.

3,198 -
PSMN004-55W,127

数据表

TrenchMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 4.2mOhm @ 25A, 10V Through Hole 2V @ 1mA 226 nC @ 5 V 55 V ±15V 13000 pF @ 25 V - - TO-247 - 300W (Tc) -55°C ~ 175°C (TJ)
PSMN005-25D,118

PSMN005-25D,118

MOSFET N-CH 25V 75A DPAK

NXP USA Inc.

5,375 -
PSMN005-25D,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 5V, 10V 5.8mOhm @ 25A, 10V Surface Mount 2V @ 1mA 60 nC @ 5 V 25 V ±15V 3500 pF @ 20 V - - DPAK - 125W (Tc) -55°C ~ 175°C (TJ)
PSMN005-55B,118

PSMN005-55B,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.

7,281 -
PSMN005-55B,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V Surface Mount 2V @ 1mA 103 nC @ 5 V 55 V ±15V 6500 pF @ 25 V - - D2PAK - 230W (Tc) -55°C ~ 175°C (TJ)
PSMN005-55P,127

PSMN005-55P,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.

2,280 -
PSMN005-55P,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V Through Hole 2V @ 1mA 103 nC @ 5 V 55 V ±15V 6500 pF @ 25 V - - TO-220AB - 230W (Tc) -55°C ~ 175°C (TJ)
PSMN009-100W,127

PSMN009-100W,127

MOSFET N-CH 100V 100A TO247-3

NXP USA Inc.

3,559 -
PSMN009-100W,127

数据表

TrenchMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 9mOhm @ 25A, 10V Through Hole 4V @ 1mA 214 nC @ 10 V 100 V ±20V 9000 pF @ 25 V - - TO-247 - 300W (Tc) -55°C ~ 175°C (TJ)
PSMN010-55D,118

PSMN010-55D,118

MOSFET N-CH 55V 75A DPAK

NXP USA Inc.

8,953 -
PSMN010-55D,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 10.5mOhm @ 25A, 10V Surface Mount 2V @ 1mA 55 nC @ 5 V 55 V ±15V 3300 pF @ 20 V - - DPAK - 125W (Tc) -55°C ~ 175°C (TJ)
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