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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
2N7002

2N7002

MOSFET N-CH 60V 200MA SOT23-3

STMicroelectronics

4,653 -
2N7002

数据表

STripFET™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Tc) 4.5V, 10V 5Ohm @ 500mA, 10V Surface Mount 3V @ 250µA 2 nC @ 5 V 60 V ±18V 43 pF @ 25 V - - SOT-23-3 - 350mW (Tc) -55°C ~ 150°C (TJ)
BSS123L6327HTSA1

BSS123L6327HTSA1

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies

5,825 -
BSS123L6327HTSA1

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V Surface Mount 1.8V @ 50µA 2.67 nC @ 10 V 100 V ±20V 69 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
DMN5L06WK-7

DMN5L06WK-7

MOSFET N-CH 50V 300MA SOT323

Diodes Incorporated

5,165 -
DMN5L06WK-7

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 300mA (Ta) 1.8V, 5V 2Ohm @ 50mA, 5V Surface Mount 1V @ 250µA - 50 V ±20V 50 pF @ 25 V - - SOT-323 - 250mW (Ta) -65°C ~ 150°C (TJ)
BSS123L6433HTMA1

BSS123L6433HTMA1

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies

6,353 -
BSS123L6433HTMA1

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V Surface Mount 1.8V @ 50µA 2.67 nC @ 10 V 100 V ±20V 69 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
SQM25N15-52_GE3

SQM25N15-52_GE3

MOSFET N-CH 150V 25A TO263

Vishay Siliconix

2,752 -
SQM25N15-52_GE3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 52mOhm @ 15A, 10V Surface Mount 4V @ 250µA 51 nC @ 10 V 150 V ±20V 2360 pF @ 25 V AEC-Q101 - TO-263 (D2PAK) Automotive 107W (Tc) -55°C ~ 175°C (TJ)
AO3460

AO3460

MOSFET N-CH 60V 650MA SOT23-3L

Alpha & Omega Semiconductor Inc.

6,269 -
AO3460

数据表

- 3-SMD, SOT-23-3 Variant Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650mA (Ta) 4.5V, 10V 1.7Ohm @ 650mA, 10V Surface Mount 2.5V @ 250µA - 60 V ±20V 27 pF @ 30 V - - SOT-23-3 - 1.4W (Ta) -55°C ~ 150°C (TJ)
SQP100N04-3M6_GE3

SQP100N04-3M6_GE3

MOSFET N-CH 40V 100A TO220AB

Vishay Siliconix

2,458 -
SQP100N04-3M6_GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 3.6mOhm @ 30A, 10V Through Hole 3.5V @ 250µA 135 nC @ 10 V 40 V ±20V 7200 pF @ 25 V AEC-Q101 - TO-220AB Automotive 120W (Tc) -55°C ~ 175°C (TJ)
SSM3J16CT(TPL3)

SSM3J16CT(TPL3)

MOSFET P-CH 20V 100MA CST3

Toshiba Semiconductor and Storage

2,288 -
SSM3J16CT(TPL3)

数据表

π-MOSVI SC-101, SOT-883 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 100mA (Ta) 1.5V, 4V 8Ohm @ 10mA, 4V Surface Mount 1.1V @ 100µA - 20 V ±10V 11 pF @ 3 V - - CST3 - 100mW (Ta) 150°C (TJ)
SQP100P06-9M3L_GE3

SQP100P06-9M3L_GE3

MOSFET P-CH 60V 100A TO220AB

Vishay Siliconix

2,035 -
SQP100P06-9M3L_GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 9.3mOhm @ 30A, 10V Through Hole 2.5V @ 250µA 300 nC @ 10 V 60 V ±20V 12010 pF @ 25 V AEC-Q101 - TO-220AB Automotive 187W (Tc) -55°C ~ 175°C (TJ)
TSM2301BCX RFG

TSM2301BCX RFG

MOSFET P-CHANNEL 20V 2.8A SOT23

Taiwan Semiconductor Corporation

6,632 -
TSM2301BCX RFG

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.8A (Tc) 1.8V, 4.5V 100mOhm @ 2.8A, 4.5V Surface Mount 950mV @ 250µA 4.5 nC @ 4.5 V 20 V ±8V 415 pF @ 6 V - - SOT-23 - 900mW (Ta) -55°C ~ 150°C (TJ)
SQP120N06-06_GE3

SQP120N06-06_GE3

MOSFET N-CH 60V 119A TO220AB

Vishay Siliconix

8,801 -
SQP120N06-06_GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 119A (Tc) 10V 6mOhm @ 30A, 10V Through Hole 3.5V @ 250µA 145 nC @ 10 V 60 V ±20V 6495 pF @ 25 V AEC-Q101 - TO-220AB Automotive 175W (Tc) -55°C ~ 175°C (TJ)
TSM2301CX RFG

TSM2301CX RFG

MOSFET P-CHANNEL 20V 2.8A SOT23

Taiwan Semiconductor Corporation

8,299 -
TSM2301CX RFG

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.8A (Tc) 2.5V, 4.5V 130mOhm @ 2.8A, 4.5V Surface Mount 950mV @ 250µA 4.5 nC @ 4.5 V 20 V ±8V 447 pF @ 6 V - - SOT-23 - 900mW (Ta) -55°C ~ 150°C (TJ)
SQP120N06-3M5L_GE3

SQP120N06-3M5L_GE3

MOSFET N-CH 60V 120A TO220AB

Vishay Siliconix

3,902 -
SQP120N06-3M5L_GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 3.5mOhm @ 30A, 10V Through Hole 2.5V @ 250µA 330 nC @ 10 V 60 V ±20V 14700 pF @ 25 V AEC-Q101 - TO-220AB Automotive 250W (Tc) -55°C ~ 175°C (TJ)
SQP120N06-6M7_GE3

SQP120N06-6M7_GE3

MOSFET N-CH 60V TO220AB

Vishay Siliconix

7,107 -
SQP120N06-6M7_GE3

数据表

- TO-220-3 Tube Obsolete - - 119A (Tc) - - Through Hole - - - - - - - TO-220AB - - -
SQP120N10-3M8_GE3

SQP120N10-3M8_GE3

MOSFET N-CH 100V 120A TO220AB

Vishay Siliconix

5,828 -
SQP120N10-3M8_GE3

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.8mOhm @ 20A, 10V Through Hole 3.5V @ 250µA 190 nC @ 10 V 100 V ±20V 7230 pF @ 25 V - - TO-220AB - 250W (Tc) -55°C ~ 175°C (TJ)
SL05N06Z

SL05N06Z

60V 5A 500MW 1 N-CHANNEL SOT-89

Shenzhen Slkormicro Semicon Co., Ltd.

3,596 -
SL05N06Z

数据表

- TO-243AA Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 4.5V, 10V 100mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA 9 nC @ 10 V 60 V ±20V 400 pF @ 30 V - - SOT-89 - 500mW (Tc) 150°C (TJ)
IPU80R3K3P7AKMA1

IPU80R3K3P7AKMA1

MOSFET N-CH 800V 1.9A TO251-3

Infineon Technologies

7,085 -
IPU80R3K3P7AKMA1

数据表

CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.9A (Tc) 10V 3.3Ohm @ 590mA, 10V Through Hole 3.5V @ 30µA 5.8 nC @ 10 V 800 V ±20V 120 pF @ 500 V - - PG-TO251-3 - 18W (Tc) -55°C ~ 150°C (TJ)
SQP120P06-6M7L_GE3

SQP120P06-6M7L_GE3

MOSFET P-CH 60V TO220AB

Vishay Siliconix

5,820 -
SQP120P06-6M7L_GE3

数据表

- TO-220-3 Tube Obsolete - - 119A (Tc) - - Through Hole - - - - - - - TO-220AB - - -
SQP25N15-52_GE3

SQP25N15-52_GE3

MOSFET N-CH 150V 25A TO220AB

Vishay Siliconix

9,617 -
SQP25N15-52_GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 52mOhm @ 15A, 10V Through Hole 4V @ 250µA 60 nC @ 10 V 150 V ±20V 2360 pF @ 25 V AEC-Q101 - TO-220AB Automotive 107W (Tc) -55°C ~ 175°C (TJ)
SQP50N06-09L_GE3

SQP50N06-09L_GE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix

4,627 -
SQP50N06-09L_GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 9mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 72 nC @ 10 V 60 V ±20V 3065 pF @ 25 V AEC-Q101 - TO-220AB Automotive 136W (Tc) -55°C ~ 175°C (TJ)
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