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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQD14N15TM

FQD14N15TM

MOSFET N-CH 150V 10A DPAK

onsemi

2,097 -
FQD14N15TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 210mOhm @ 5A, 10V Surface Mount 4V @ 250µA 23 nC @ 10 V 150 V ±25V 715 pF @ 25 V - - TO-252AA - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
IRF7534D1PBF

IRF7534D1PBF

MOSFET P-CH 20V 4.3A MICRO8

Infineon Technologies

9,849 -
IRF7534D1PBF

数据表

FETKY™ 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 4.3A (Ta) 2.5V, 4.5V 55mOhm @ 4.3A, 4.5V Surface Mount 1.2V @ 250µA 15 nC @ 5 V 20 V ±12V 1066 pF @ 10 V - Schottky Diode (Isolated) Micro8™ - 1.25W (Ta) -55°C ~ 150°C (TJ)
STT4PF20V

STT4PF20V

MOSFET P-CH 20V 3A SOT-23-6

STMicroelectronics

8,951 -
STT4PF20V

数据表

STripFET™ II SOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3A (Tc) 2.7V, 4.5V 110mOhm @ 1.5A, 4.5V Surface Mount 600mV @ 250µA (Min) 7.8 nC @ 4.5 V 20 V ±10V 500 pF @ 15 V - - SOT-23-6 - 1.6W (Tc) 150°C (TJ)
STT3PF20V

STT3PF20V

MOSFET P-CH 20V 2.2A SOT23-6

STMicroelectronics

5,209 -
STT3PF20V

数据表

STripFET™ II SOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.2A (Tc) 2.7V, 4.5V 200mOhm @ 1A, 4.5V Surface Mount 600mV @ 250µA (Min) 4.7 nC @ 4.5 V 20 V ±12V 315 pF @ 15 V - - SOT-23-6 - 1.6W (Tc) -55°C ~ 150°C (TJ)
NDC631N

NDC631N

MOSFET N-CH 20V 4.1A SUPERSOT6

onsemi

5,191 -
NDC631N

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.1A (Ta) 2.7V, 4.5V 60mOhm @ 4.1A, 4.5V Surface Mount 1V @ 250µA 14 nC @ 4.5 V 20 V 8V 365 pF @ 10 V - - SuperSOT™-6 - 1.6W (Ta) -55°C ~ 150°C (TJ)
SIB412DK-T1-GE3

SIB412DK-T1-GE3

MOSFET N-CH 20V 9A PPAK SC75-6

Vishay Siliconix

8,331 -
SIB412DK-T1-GE3

数据表

TrenchFET® PowerPAK® SC-75-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 1.8V, 4.5V 34mOhm @ 6.6A, 4.5V Surface Mount 1V @ 250µA 10.16 nC @ 5 V 20 V ±8V 535 pF @ 10 V - - PowerPAK® SC-75-6 - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ)
SFT1341-C-TL-W

SFT1341-C-TL-W

MOSFET P-CH 40V 10A DPAK/TP-FA

onsemi

8,083 -
SFT1341-C-TL-W

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete - - - - - Surface Mount - - - - - - - DPAK/TP-FA - - -
BSS87E6327

BSS87E6327

MOSFET N-CH 240V 260MA SOT89-4

Infineon Technologies

5,424 -
BSS87E6327

数据表

SIPMOS® TO-243AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 260mA (Ta) 4.5V, 10V 6Ohm @ 260mA, 10V Surface Mount 1.8V @ 108µA 5.5 nC @ 10 V 240 V ±20V 97 pF @ 25 V - - PG-SOT89-4-2 - 1W (Ta) -55°C ~ 150°C (TJ)
MCAC140N04Y-TP

MCAC140N04Y-TP

N-CHANNEL MOSFET,DFN5060

Micro Commercial Co

8,868 -
MCAC140N04Y-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 140A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V Surface Mount 3V @ 250µA 45.7 nC @ 10 V 40 V ±20V 2354 pF @ 20 V - - DFN5060 - 150W (Tj) -55°C ~ 175°C (TJ)
PSMN013-30LL,115

PSMN013-30LL,115

MOSFET N-CH 30V 21A 8DFN

NXP USA Inc.

2,071 -
PSMN013-30LL,115

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 4.5V, 10V 13mOhm @ 5A, 10V Surface Mount 2.15V @ 1mA 12.2 nC @ 10 V 30 V ±20V 768 pF @ 15 V - - 8-DFN3333 (3.3x3.3) - 41W (Tc) -55°C ~ 150°C (TJ)
AOD4128

AOD4128

MOSFET N-CH 25V 60A TO252

Alpha & Omega Semiconductor Inc.

5,751 -
AOD4128

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 80 nC @ 10 V 25 V ±20V 4300 pF @ 12.5 V - - TO-252 (DPAK) - 2W (Ta), 75W (Tc) -55°C ~ 175°C (TJ)
IRF530

IRF530

MOSFET N-CH 100V 14A TO220AB

STMicroelectronics

4,542 -
IRF530

数据表

STripFET™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 160mOhm @ 7A, 10V Through Hole 4V @ 250µA 21 nC @ 10 V 100 V ±20V 458 pF @ 25 V - - TO-220 - 60W (Tc) -55°C ~ 175°C (TJ)
STN2NE10

STN2NE10

MOSFET N-CH 100V 2A SOT-223

STMicroelectronics

3,457 -
STN2NE10

数据表

STripFET™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 400mOhm @ 1A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 100 V ±20V 305 pF @ 25 V - - SOT-223 - 2.5W (Tc) 150°C (TJ)
SIR474DP-T1-RE3

SIR474DP-T1-RE3

MOSFET N-CH 30V 20A PPAK SO-8

Vishay Siliconix

9,659 -
SIR474DP-T1-RE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 9.5mOhm @ 10A, 10V Surface Mount 2.2V @ 250µA 27 nC @ 10 V 30 V ±20V 985 pF @ 15 V - - PowerPAK® SO-8 - 29.8W (Tc) -55°C ~ 150°C (TJ)
DMP2004UFG-13

DMP2004UFG-13

MOSFET BVDSS: 8V~24V PowerDI3333

Diodes Incorporated

3,925 -
DMP2004UFG-13

数据表

- 8-PowerVDFN Bulk Active P-Channel MOSFET (Metal Oxide) 115A (Tc) 2.5V, 10V 3mOhm @ 15A, 10V Surface Mount 1.1V @ 250µA 83 nC @ 10 V 20 V ±12V 3840 pF @ 10 V - - POWERDI3333-8 - 1W (Ta) -55°C ~ 150°C (TJ)
SIA456DJ-T3-GE3

SIA456DJ-T3-GE3

MOSFET N-CH 200V 1.1A/2.6A PPAK

Vishay Siliconix

4,649 -
SIA456DJ-T3-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.1A (Ta), 2.6A (Tc) 1.8V, 4.5V 1.38Ohm @ 750mA, 4.5V Surface Mount 1.4V @ 250µA 14.5 nC @ 10 V 200 V ±16V 350 pF @ 100 V - - PowerPAK® SC-70-6 - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ)
IRLU110ATU

IRLU110ATU

MOSFET N-CH 100V 4.7A I-PAK

onsemi

9,471 -
IRLU110ATU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.7A (Tc) 5V 440mOhm @ 2.35A, 5V Through Hole 2V @ 250µA 8 nC @ 5 V 100 V ±20V 235 pF @ 25 V - - IPAK - 2.5W (Ta), 22W (Tc) -55°C ~ 150°C (TJ)
SIHU3N50D-GE3

SIHU3N50D-GE3

MOSFET N-CH 500V 3A TO251

Vishay Siliconix

7,410 -
SIHU3N50D-GE3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 3.2Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 12 nC @ 10 V 500 V ±30V 175 pF @ 100 V - - TO-251AA - 69W (Tc) -55°C ~ 150°C (TJ)
FCP20N60_G

FCP20N60_G

MOSFET N-CH 600V 20A TO220-3

onsemi

4,980 -
FCP20N60_G

数据表

SuperFET™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 10A, 10V Through Hole 5V @ 250µA 98 nC @ 10 V 600 V ±30V 3080 pF @ 25 V - - TO-220-3 - 208W (Tc) -55°C ~ 150°C (TJ)
FCPF11N65_G

FCPF11N65_G

INTEGRATED CIRCUIT

onsemi

6,111 -
FCPF11N65_G

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
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