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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDB088N08_F141

FDB088N08_F141

MOSFET N-CHANNEL 75V 120A D2PAK

onsemi

7,738 -
FDB088N08_F141

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 8.8mOhm @ 75A, 10V Surface Mount 4V @ 250µA 118 nC @ 10 V 75 V ±20V 6595 pF @ 25 V - - TO-263 (D2PAK) - 160W (Tc) -55°C ~ 175°C (TJ)
RJK6012DPP-A0#T2

RJK6012DPP-A0#T2

MOSFET N-CH 600V 6A TO220FP

Renesas Electronics Corporation

9,829 -
RJK6012DPP-A0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 1.37Ohm @ 3A, 10V Through Hole - 20 nC @ 10 V 600 V ±30V 765 pF @ 25 V - - TO-220FP - 29.5W (Ta) 150°C
2N7002CKVL

2N7002CKVL

MOSFET N-CH 60V 300MA TO236AB

Nexperia USA Inc.

7,932 -
2N7002CKVL

数据表

TrenchMOS™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 300mA (Ta) 4.5V, 10V 1.6Ohm @ 500mA, 10V Surface Mount 2.5V @ 250µA 1.3 nC @ 4.5 V 60 V ±20V 55 pF @ 25 V AEC-Q101 - TO-236AB Automotive 350mW (Ta) 150°C (TJ)
PMT200EPEAX

PMT200EPEAX

MOSFET P-CH 70V 2.4A SOT223

Nexperia USA Inc.

8,172 -
PMT200EPEAX

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.4A (Ta) 4.5V, 10V 167mOhm @ 2.4A, 10V Surface Mount 3V @ 250µA 15.9 nC @ 10 V 70 V ±20V 822 pF @ 35 V AEC-Q101 - SOT-223 Automotive 800mW (Ta) -55°C ~ 150°C (TJ)
PSMN5R6-100YSFQ

PSMN5R6-100YSFQ

PSMN5R6-100YSF/SOT1023/4 LEADS

Nexperia USA Inc.

7,065 -
PSMN5R6-100YSFQ

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
BSS123/LF1R

BSS123/LF1R

MOSFET N-CH 100V 150MA TO236AB

Nexperia USA Inc.

8,812 -
BSS123/LF1R

数据表

TrenchMOS™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150mA (Ta) 10V 6Ohm @ 120mA, 10V Surface Mount 2.8V @ 1mA - 100 V ±20V 40 pF @ 25 V - - TO-236AB - 250mW (Ta) -55°C ~ 150°C (TJ)
BSS138AKA/LF1R

BSS138AKA/LF1R

MOSFET N-CH 60V 200MA TO236AB

Nexperia USA Inc.

4,863 -
BSS138AKA/LF1R

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Ta) 2.5V, 10V 4.5Ohm @ 100mA, 10V Surface Mount 1.5V @ 250A 0.51 nC @ 4.5 V 60 V ±20V 20 pF @ 30 V AEC-Q101 - TO-236AB Automotive 1.06W (Tc) -55°C ~ 150°C (TJ)
BSS138BKW-BX

BSS138BKW-BX

MOSFET N-CHANNEL 60V 320MA SC70

Nexperia USA Inc.

3,882 -
BSS138BKW-BX

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 320mA (Ta) 2.5V, 10V 1.6Ohm @ 320mA, 10V Surface Mount 1.6V @ 250µA 0.7 nC @ 4.5 V 60 V ±20V 56 pF @ 10 V AEC-Q101 - SOT-323 Automotive 830mW (Tc) -55°C ~ 150°C (TJ)
BSS84AK-BR

BSS84AK-BR

MOSFET P-CH 50V 180MA TO236AB

Nexperia USA Inc.

2,818 -
BSS84AK-BR

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 180mA (Ta) 5V, 10V 7.5Ohm @ 100mA, 10V Surface Mount 2.1V @ 250µA 0.35 nC @ 5 V 50 V ±20V 36 pF @ 25 V AEC-Q101 - TO-236AB Automotive 1.14W (Tc) -55°C ~ 150°C (TJ)
BSS84AKW-BX

BSS84AKW-BX

MOSFET P-CHANNEL 50V 150MA SC70

Nexperia USA Inc.

8,447 -
BSS84AKW-BX

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 150mA (Ta) 5V, 10V 7.5Ohm @ 100mA, 10V Surface Mount 2.1V @ 250µA 0.35 nC @ 5 V 50 V ±20V 36 pF @ 25 V AEC-Q101 - SOT-323 Automotive 830mW (Tc) -55°C ~ 150°C (TJ)
BUK3F00-50WDFE,518

BUK3F00-50WDFE,518

IC 9675 AUTO 64QFP

Nexperia USA Inc.

7,781 -
BUK3F00-50WDFE,518

数据表

* - Tray Obsolete - - - - - - - - - - - - - - - - -
PHD101NQ03LT,118

PHD101NQ03LT,118

MOSFET N-CH 30V 75A DPAK

Nexperia USA Inc.

6,039 -
PHD101NQ03LT,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 5V, 10V 5.5mOhm @ 25A, 10V Surface Mount 2.5V @ 1mA 23 nC @ 5 V 30 V ±20V 2180 pF @ 25 V - - DPAK - 166W (Tc) -55°C ~ 175°C (TJ)
PJQ5463A-AU_R2_000A1

PJQ5463A-AU_R2_000A1

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,061 -
PJQ5463A-AU_R2_000A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 4A (Ta), 15A (Tc) 4.5V, 10V 68mOhm @ 7.5A, 10V Surface Mount 2.5V @ 250µA 17 nC @ 10 V 60 V ±20V 879 pF @ 30 V AEC-Q101 - DFN5060-8 Automotive 2W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
FQD8P10TF_NB82052

FQD8P10TF_NB82052

MOSFET P-CH 100V 6.6A DPAK

onsemi

8,191 -
FQD8P10TF_NB82052

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.6A (Tc) 10V 530mOhm @ 3.3A, 10V Surface Mount 4V @ 250µA 15 nC @ 10 V 100 V ±30V 470 pF @ 25 V - - TO-252AA - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ)
DMT3004LFG-13

DMT3004LFG-13

MOSFET NCH 30V 10.4A POWERDI

Diodes Incorporated

2,771 -
DMT3004LFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10.4A (Ta), 25A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V Surface Mount 3V @ 250µA 44 nC @ 10 V 30 V +20V, -16V 2370 pF @ 15 V AEC-Q101 - POWERDI3333-8 Automotive 2.1W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
IPU60R1K0CEAKMA2

IPU60R1K0CEAKMA2

MOSFET N-CH 600V 4.3A TO251-3

Infineon Technologies

3,282 -
IPU60R1K0CEAKMA2

数据表

CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 1Ohm @ 1.5A, 10V Through Hole 3.5V @ 130µA 13 nC @ 10 V 600 V ±20V 280 pF @ 100 V - - PG-TO251-3 - 61W (Tc) -40°C ~ 150°C (TJ)
DMP26M1UPSW-13

DMP26M1UPSW-13

MOSFET BVDSS: 8V~24V PowerDI5060

Diodes Incorporated

6,100 -
DMP26M1UPSW-13

数据表

- 8-PowerTDFN Bulk Active P-Channel MOSFET (Metal Oxide) 83A (Tc) 2.5V, 4.5V 6mOhm @ 15A, 4.5V Surface Mount, Wettable Flank 1V @ 250µA 164 nC @ 10 V 20 V ±10V 5392 pF @ 10 V - - PowerDI5060-8 (Type UX) - 1.9W (Ta), 2.6W (Tc) -55°C ~ 150°C (TJ)
DMP27M1UPSW-13

DMP27M1UPSW-13

MOSFET BVDSS: 8V~24V PowerDI5060

Diodes Incorporated

2,652 -
DMP27M1UPSW-13

数据表

- 8-PowerTDFN Bulk Active P-Channel MOSFET (Metal Oxide) 84A (Tc) 2.5V, 10V 5.5mOhm @ 15A, 10V Surface Mount, Wettable Flank 1.3V @ 250µA 123 nC @ 10 V 20 V ±12V 4777 pF @ 10 V - - PowerDI5060-8 (Type UX) - 1.95W (Ta), 3.57W (Tc) -55°C ~ 150°C (TJ)
DMPH16M1UPSW-13

DMPH16M1UPSW-13

MOSFET BVDSS: 8V~24V PowerDI5060

Diodes Incorporated

8,959 -
DMPH16M1UPSW-13

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 96A (Tc) 2.5V, 4.5V 6mOhm @ 15A, 4.5V Surface Mount, Wettable Flank 1V @ 250µA 164 nC @ 8 V 12 V ±8V 5392 pF @ 10 V - - PowerDI5060-8 (Type UX) - 1.95W -55°C ~ 175°C (TJ)
PJD2NA1K_L2_00001

PJD2NA1K_L2_00001

1000V N-CHANNEL MOSFET

Panjit International Inc.

2,842 -
PJD2NA1K_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 9Ohm @ 1A, 10V Surface Mount 4V @ 250µA 14 nC @ 10 V 1000 V ±30V 385 pF @ 25 V - - TO-252AA - 50W (Tc) -55°C ~ 150°C (TJ)
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