富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SQP50P03-07_GE3

SQP50P03-07_GE3

MOSFET P-CH 30V 50A TO220AB

Vishay Siliconix

8,283 -
SQP50P03-07_GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V Through Hole 2.5V @ 250µA 155 nC @ 10 V 30 V ±20V 5380 pF @ 25 V AEC-Q101 - TO-220AB Automotive 150W (Tc) -55°C ~ 175°C (TJ)
SQP60N06-15_GE3

SQP60N06-15_GE3

MOSFET N-CH 60V 56A TO220AB

Vishay Siliconix

9,534 -
SQP60N06-15_GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 15mOhm @ 30A, 10V Through Hole 3.5V @ 250µA 50 nC @ 10 V 60 V ±20V 2480 pF @ 25 V AEC-Q101 - TO-220AB Automotive 107W (Tc) -55°C ~ 175°C (TJ)
SQP90P06-07L_GE3

SQP90P06-07L_GE3

MOSFET P-CH 60V 120A TO220AB

Vishay Siliconix

4,821 -
SQP90P06-07L_GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 6.7mOhm @ 30A, 10V Through Hole 2.5V @ 250µA 270 nC @ 10 V 60 V ±20V 14280 pF @ 25 V AEC-Q101 - TO-220AB Automotive 300W (Tc) -55°C ~ 175°C (TJ)
SQV120N06-4M7L_GE3

SQV120N06-4M7L_GE3

MOSFET N-CH 60V 120A TO262-3

Vishay Siliconix

9,504 -
SQV120N06-4M7L_GE3

数据表

TrenchFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 4.7mOhm @ 30A, 10V Through Hole 2.5V @ 250µA 230 nC @ 10 V 60 V ±20V 8800 pF @ 25 V AEC-Q101 - TO-262-3 Automotive 250W (Tc) -55°C ~ 175°C (TJ)
SQV120N10-3M8_GE3

SQV120N10-3M8_GE3

MOSFET N-CH 100V 120A TO262-3

Vishay Siliconix

7,056 -
SQV120N10-3M8_GE3

数据表

TrenchFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.8mOhm @ 20A, 10V Through Hole 3.5V @ 250µA 190 nC @ 10 V 100 V ±20V 7230 pF @ 25 V AEC-Q101 - TO-262-3 Automotive 250W (Tc) -55°C ~ 175°C (TJ)
SUP45P03-09-GE3

SUP45P03-09-GE3

MOSFET P-CH 30V 45A TO220AB

Vishay Siliconix

4,771 -
SUP45P03-09-GE3

数据表

- TO-220-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 45A (Tc) 4.5V, 10V 8.7mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 90 nC @ 10 V 30 V ±20V 2700 pF @ 15 V - - TO-220AB - 73.5W (Tc) -55°C ~ 150°C (TJ)
SQM40014EM_GE3

SQM40014EM_GE3

MOSFET N-CH 40V 200A TO263-7

Vishay Siliconix

8,686 -
SQM40014EM_GE3

数据表

TrenchFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 1mOhm @ 35A, 10V Surface Mount 3.5V @ 250µA 250 nC @ 10 V 40 V ±20V 15525 pF @ 25 V AEC-Q101 - TO-263-7 Automotive 375W (Tc) -55°C ~ 175°C (TJ)
R6030MNX

R6030MNX

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor

3,118 -
R6030MNX

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 150mOhm @ 15A, 10V Through Hole 5V @ 1mA 43 nC @ 10 V 600 V ±30V 2180 pF @ 25 V - - TO-220FM - 90W (Tc) -55°C ~ 150°C (TJ)
R6076MNZ1C9

R6076MNZ1C9

MOSFET N-CHANNEL 600V 76A TO247

Rohm Semiconductor

3,531 -
R6076MNZ1C9

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 76A (Tc) 10V 55mOhm @ 38A, 10V Through Hole 5V @ 1mA 115 nC @ 10 V 600 V ±30V 7000 pF @ 25 V - - TO-247 - 740W (Tc) -55°C ~ 150°C (TJ)
FDMC6683PZ

FDMC6683PZ

MOSFET P-CH 20V 40A 8MLP

onsemi

6,301 -
FDMC6683PZ

数据表

PowerTrench® - Bulk Obsolete P-Channel MOSFET (Metal Oxide) 40A (Tc) 2.5V, 4.5V - Surface Mount 1.5V @ 250µA 74 nC @ 10 V 20 V ±12V 7995 pF @ 10 V - - 8-MLP (3.3x3.3) - 26W (Tc) -55°C ~ 150°C (TJ)
FDMC7672_F125

FDMC7672_F125

MOSFET N-CH 30V 16.9A/20A 8MLP

onsemi

2,914 -
FDMC7672_F125

数据表

PowerTrench®, SyncFET™ 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 16.9A (Ta), 20A (Tc) 4.5V, 10V 5.7mOhm @ 16.9A, 10V Surface Mount 3V @ 250µA 57 nC @ 10 V 30 V ±20V 3890 pF @ 15 V - - 8-MLP (3.3x3.3) - 2.3W (Ta), 33W (Tc) -55°C ~ 150°C (TJ)
FQP13N50C_F105

FQP13N50C_F105

MOSFET N-CH 500V 13A TO220-3

onsemi

9,668 -
FQP13N50C_F105

数据表

QFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 480mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 56 nC @ 10 V 500 V ±30V 2055 pF @ 25 V - - TO-220-3 - 195W (Tc) -55°C ~ 150°C (TJ)
FQPF10N60C_F105

FQPF10N60C_F105

MOSFET N-CH 600V 9.5A TO220F

onsemi

5,597 -
FQPF10N60C_F105

数据表

QFET® TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 9.5A (Tc) 10V 730mOhm @ 4.75A, 10V Through Hole 4V @ 250µA 57 nC @ 10 V 600 V ±30V 2040 pF @ 25 V - - TO-220F-3 - 50W (Tc) -55°C ~ 150°C (TJ)
AON6410

AON6410

MOSFET N-CH 30V 10A/24A 8DFN

Alpha & Omega Semiconductor Inc.

6,638 -
AON6410

数据表

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta), 24A (Tc) 4.5V, 10V 12mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 28 nC @ 10 V 30 V ±12V 1452 pF @ 15 V - - 8-DFN (5x6) - 2W (Ta), 35W (Tc) -55°C ~ 150°C (TJ)
SIS444DN-T1-GE3

SIS444DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix

9,933 -
SIS444DN-T1-GE3

数据表

- PowerPAK® 1212-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 3.3mOhm @ 10A, 10V Surface Mount 2.3V @ 250µA 102 nC @ 10 V 30 V ±20V 3065 pF @ 15 V - - PowerPAK® 1212-8 - 52W (Tc) -55°C ~ 150°C (TJ)
DMT34M2LPS-13

DMT34M2LPS-13

MOSFET BVDSS: 25V 30V POWERDI506

Diodes Incorporated

3,753 -
DMT34M2LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 100A (Tc) 4.5V, 10V 3.2mOhm @ 20A, 10V Surface Mount 3V @ 250µA 39 nC @ 10 V 30 V ±20V 2242 pF @ 15 V - - PowerDI5060-8 - 2.2W (Ta) -
PSMN2R4-30MLD/2X

PSMN2R4-30MLD/2X

PSMN2R4-30MLD/SOT1210/MLFPAK

Nexperia USA Inc.

2,968 -
PSMN2R4-30MLD/2X

数据表

- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 2.4mOhm @ 25A, 10V Surface Mount 2.2V @ 1mA 51 nC @ 10 V 30 V ±20V 3264 pF @ 15 V - - LFPAK33 - 91W (Tc) -55°C ~ 175°C (TJ)
PJP40N06A_T0_00001

PJP40N06A_T0_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,578 -
PJP40N06A_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 17mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 13.5 nC @ 4.5 V 60 V ±20V 1574 pF @ 25 V - - TO-220AB - 93W (Tc) -55°C ~ 150°C (TJ)
BSP297 E6327

BSP297 E6327

MOSFET N-CH 200V 660MA SOT223-4

Infineon Technologies

4,989 -
BSP297 E6327

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 660mA (Ta) 4.5V, 10V 1.8Ohm @ 660mA, 10V Surface Mount 1.8V @ 400µA 16.1 nC @ 10 V 200 V ±20V 357 pF @ 25 V - - PG-SOT223-4 - 1.8W (Ta) -55°C ~ 150°C (TJ)
CMS10P10D-HF

CMS10P10D-HF

MOSFET P-CH 100V 10A DPAK

Comchip Technology

2,213 -
CMS10P10D-HF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 10A (Tc) - 210mOhm @ 5A, 10V Surface Mount 3V @ 250µA 20 nC @ 10 V 100 V ±20V 1419 pF @ 25 V - - TO-252 (DPAK) - 2W (Ta), 54W (Tc) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户