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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
VN10LPSTZ

VN10LPSTZ

MOSFET VMOS N-CHAN TO92-3

Diodes Incorporated

9,442 -
VN10LPSTZ

数据表

- E-Line-3, Formed Leads Tape & Box (TB) Active N-Channel MOSFET (Metal Oxide) 270mA (Ta) 5V, 10V 5Ohm @ 500mA, 10V Through Hole 2.5V @ 1mA - 60 V ±20V 60 pF @ 25 V - - E-Line (TO-92 compatible) - 625mW (Ta) -55°C ~ 150°C (TJ)
PJD8NA65A_L2_00001

PJD8NA65A_L2_00001

650V N-CHANNEL MOSFET

Panjit International Inc.

3,535 -
PJD8NA65A_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 7.5A (Ta) 10V 1.2Ohm @ 3.75A, 10V Surface Mount 4V @ 250µA 29 nC @ 10 V 650 V ±30V 1245 pF @ 25 V - - TO-252AA - 140W (Tc) -55°C ~ 150°C (TJ)
MCG53N06AHE3-TP

MCG53N06AHE3-TP

Interface

Micro Commercial Co

3,349 -
MCG53N06AHE3-TP

数据表

- 8-VDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 53A 4.5V, 10V 8.2mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 31 nC @ 10 V 60 V ±20V 1850 pF @ 50 V AEC-Q101 - DFN3333 Automotive 45W -55°C ~ 150°C
SQM100N02-3M5L_GE3

SQM100N02-3M5L_GE3

MOSFET N-CH 20V 100A TO263

Vishay Siliconix

8,719 -
SQM100N02-3M5L_GE3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 3.5mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 110 nC @ 10 V 20 V ±20V 5500 pF @ 10 V AEC-Q101 - TO-263 (D2PAK) Automotive 150W (Tc) -55°C ~ 175°C (TJ)
DMP26M1UPS-13

DMP26M1UPS-13

MOSFET BVDSS: 8V~24V POWERDI5060

Diodes Incorporated

4,142 -
DMP26M1UPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 90A (Tc) 2.5V, 4.5V 6mOhm @ 15A, 4.5V Surface Mount 1V @ 250µA 164 nC @ 10 V 20 V ±10V 5392 pF @ 10 V - - PowerDI5060-8 - 1.34W -55°C ~ 150°C (TJ)
SQM120N02-1M3L_GE3

SQM120N02-1M3L_GE3

MOSFET N-CH 20V 120A TO263

Vishay Siliconix

6,251 -
SQM120N02-1M3L_GE3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 1.3mOhm @ 40A, 10V Surface Mount 2.5V @ 250µA 290 nC @ 10 V 20 V ±20V 14500 pF @ 10 V AEC-Q101 - TO-263 (D2PAK) Automotive 375W (Tc) -55°C ~ 175°C (TJ)
PJP4NA50A_T0_00001

PJP4NA50A_T0_00001

500V N-CHANNEL MOSFET

Panjit International Inc.

8,663 -
PJP4NA50A_T0_00001

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 2.3Ohm @ 2A, 10V Through Hole 4V @ 250µA 9.8 nC @ 10 V 500 V ±30V 449 pF @ 25 V - - TO-220AB - 90W (Tc) -55°C ~ 150°C (TJ)
SQM120N06-06_GE3

SQM120N06-06_GE3

MOSFET N-CH 60V 120A TO263

Vishay Siliconix

3,101 -
SQM120N06-06_GE3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 6mOhm @ 30A, 10V Surface Mount 3.5V @ 250µA 145 nC @ 10 V 60 V ±20V 6495 pF @ 25 V AEC-Q101 - TO-263 (D2PAK) Automotive 230W (Tc) -55°C ~ 175°C (TJ)
AOD32324

AOD32324

LINEAR IC

Alpha & Omega Semiconductor Inc.

4,888 -
AOD32324

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 33A (Ta), 70A (Tc) 4.5V, 10V 3.4mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 120 nC @ 10 V 30 V ±20V 5350 pF @ 15 V - - TO-252 (DPAK) - 6.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ)
SI2311DS-T1-E3

SI2311DS-T1-E3

MOSFET P-CH 8V 3A SOT23-3

Vishay Siliconix

4,452 -
SI2311DS-T1-E3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3A (Ta) 1.8V, 4.5V 45mOhm @ 3.5A, 4.5V Surface Mount 800mV @ 250µA 12 nC @ 4.5 V 8 V ±8V 970 pF @ 4 V - - SOT-23-3 (TO-236) - 710mW (Ta) -55°C ~ 150°C (TJ)
GT080N08D5

GT080N08D5

N85V,65A,RD<8.5M@10V,VTH2.0V~4.0

Goford Semiconductor

5,599 -
GT080N08D5

数据表

- 8-PowerTDFN Active N-Channel MOSFET (Metal Oxide) 65A (Tc) 10V 8mOhm @ 20A, 10V Surface Mount 4V @ 250µA 39 nC @ 10 V 85 V ±20V 1885 pF @ 50 V - - 8-DFN (4.9x5.75) - 69W (Tc) -55°C ~ 150°C (TJ)
G75P04D5I

G75P04D5I

P-40V,-70A,RD(MAX)<6.5M@-10V,VTH

Goford Semiconductor

4,636 -
G75P04D5I

数据表

- 8-PowerTDFN Obsolete P-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 106 nC @ 10 V 40 V ±20V 6414 pF @ 20 V - - 8-DFN (4.9x5.75) - 150W (Tc) -55°C ~ 150°C (TJ)
DMTH10H025LPS-13

DMTH10H025LPS-13

MOSFET BVDSS: 61V-100V POWERDI50

Diodes Incorporated

4,387 -
DMTH10H025LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.3A (Ta), 45A (Tc) 6V, 10V 23mOhm @ 20A, 10V Surface Mount 3V @ 250µA 21 nC @ 10 V 100 V ±20V 1477 pF @ 50 V - - PowerDI5060-8 - 3.2W (Ta), 79W (Tc) -55°C ~ 175°C (TJ)
DMN3008SFGQ-13

DMN3008SFGQ-13

MOSFET N-CH 30V PWRDI3333

Diodes Incorporated

6,024 -
DMN3008SFGQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.6A (Ta), 62A (Tc) 4.5V, 10V 4.4mOhm @ 13.5A, 10V Surface Mount 2.3V @ 250µA 86 nC @ 10 V 30 V ±20V 3690 pF @ 10 V AEC-Q101 - POWERDI3333-8 Automotive 900mW (Ta) -55°C ~ 150°C (TJ)
DMN6013LFGQ-13

DMN6013LFGQ-13

MOSFET N-CH 60V 10.3A PWRDI3333

Diodes Incorporated

6,962 -
DMN6013LFGQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10.3A (Ta), 45A (Tc) 4.5V, 10V 13mOhm @ 10A, 10V Surface Mount 3V @ 250µA 55.4 nC @ 10 V 60 V ±20V 2577 pF @ 30 V AEC-Q101 - POWERDI3333-8 Automotive 1W (Ta) -55°C ~ 150°C (TJ)
DMP2005UFG-7

DMP2005UFG-7

MOSFET P-CH 20V 89A POWERDI3333

Diodes Incorporated

6,738 -
DMP2005UFG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 89A (Tc) 1.8V, 4.5V 4mOhm @ 15A, 4.5V Surface Mount 900mV @ 250µA 125 nC @ 10 V 20 V ±10V 4670 pF @ 10 V - - PowerDI3333-8 - 2.2W (Ta) -55°C ~ 150°C (TJ)
DMTH6016LFVWQ-7-A

DMTH6016LFVWQ-7-A

MOSFET BVDSS: 41V~60V POWERDI333

Diodes Incorporated

2,806 -
DMTH6016LFVWQ-7-A

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41A (Tc) 4.5V, 10V 16mOhm @ 20A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 15.1 nC @ 10 V 60 V ±20V 939 pF @ 30 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 1.17W (Ta) -55°C ~ 175°C (TJ)
FQPF9N15

FQPF9N15

MOSFET N-CH 150V 6.9A TO220F

onsemi

7,814 -
FQPF9N15

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.9A (Tc) 10V 400mOhm @ 3.45A, 10V Through Hole 4V @ 250µA 13 nC @ 10 V 150 V ±25V 410 pF @ 25 V - - TO-220F-3 - 44W (Tc) -55°C ~ 175°C (TJ)
SSM3J114TU(TE85L)

SSM3J114TU(TE85L)

MOSFET P-CH 20V 1.8A UFM

Toshiba Semiconductor and Storage

93 -
SSM3J114TU(TE85L)

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.8A (Ta) 1.5V, 4V 149mOhm @ 600mA, 4V Surface Mount 1V @ 1mA 7.7 nC @ 4 V 20 V ±8V 331 pF @ 10 V - - UFM - 500mW (Ta) 150°C (TJ)
AO6415

AO6415

MOSFET P-CH 20V 3.3A 6TSOP

Alpha & Omega Semiconductor Inc.

23 -
AO6415

数据表

- SC-74, SOT-457 Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 3.3A (Ta) 2.5V, 10V 75mOhm @ 3.3A, 10V Surface Mount 1.4V @ 250µA 6 nC @ 4.5 V 20 V ±12V 620 pF @ 10 V - - 6-TSOP - 1.25W (Ta) -55°C ~ 150°C (TJ)
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