富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPL65R460CFDAUMA1

IPL65R460CFDAUMA1

MOSFET N-CH 650V 8.3A THIN-PAK

Infineon Technologies

2,551 -
IPL65R460CFDAUMA1

数据表

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.3A (Tc) 10V 460mOhm @ 3.4A, 10V Surface Mount 4.5V @ 300µA 31.5 nC @ 10 V 650 V ±20V 870 pF @ 100 V - - PG-VSON-4 - 83.3W (Tc) -40°C ~ 150°C (TJ)
IPL65R660E6AUMA1

IPL65R660E6AUMA1

MOSFET N-CH 650V 7A THIN-PAK

Infineon Technologies

5,788 -
IPL65R660E6AUMA1

数据表

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 660mOhm @ 2.1A, 10V Surface Mount 3.5V @ 200µA 23 nC @ 10 V 650 V ±20V 440 pF @ 100 V - - PG-VSON-4 - 63W (Tc) -40°C ~ 150°C (TJ)
IPP120P04P404AKSA1

IPP120P04P404AKSA1

MOSFET P-CH 40V 120A TO220-3

Infineon Technologies

3,291 -
IPP120P04P404AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.8mOhm @ 100A, 10V Through Hole 4V @ 340µA 205 nC @ 10 V 40 V ±20V 14790 pF @ 25 V AEC-Q101 - PG-TO220-3-1 Automotive 136W (Tc) -55°C ~ 175°C (TJ)
IPP65R190CFDAAKSA1

IPP65R190CFDAAKSA1

MOSFET N-CH 650V 17.5A TO220-3

Infineon Technologies

5,088 -
IPP65R190CFDAAKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V Through Hole 4.5V @ 700µA 68 nC @ 10 V 650 V ±20V 1850 pF @ 100 V AEC-Q101 - PG-TO220-3 Automotive 151W (Tc) -40°C ~ 150°C (TJ)
IPP80P03P405AKSA1

IPP80P03P405AKSA1

MOSFET P-CH 30V 80A TO220-3

Infineon Technologies

5,569 -
IPP80P03P405AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 5mOhm @ 80A, 10V Through Hole 4V @ 253µA 130 nC @ 10 V 30 V ±20V 10300 pF @ 25 V AEC-Q101 - PG-TO220-3-1 Automotive 137W (Tc) -55°C ~ 175°C (TJ)
IPP80P04P4L04AKSA1

IPP80P04P4L04AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies

2,581 -
IPP80P04P4L04AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V Through Hole 2.2V @ 250µA 176 nC @ 10 V 40 V +5V, -16V 3800 pF @ 25 V AEC-Q101 - PG-TO220-3-1 Automotive 125W (Tc) -55°C ~ 175°C (TJ)
IPP80P04P4L06AKSA1

IPP80P04P4L06AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies

2,198 -
IPP80P04P4L06AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 6.7mOhm @ 80A, 10V Through Hole 2.2V @ 150µA 104 nC @ 10 V 40 V +5V, -16V 6580 pF @ 25 V AEC-Q101 - PG-TO220-3-1 Automotive 88W (Tc) -55°C ~ 175°C (TJ)
IPP80P04P4L08AKSA1

IPP80P04P4L08AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies

9,250 -
IPP80P04P4L08AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 8.2mOhm @ 80A, 10V Through Hole 2.2V @ 120µA 92 nC @ 10 V 40 V +5V, -16V 5430 pF @ 25 V AEC-Q101 - PG-TO220-3-1 Automotive 75W (Tc) -55°C ~ 175°C (TJ)
IPS65R600E6AKMA1

IPS65R600E6AKMA1

MOSFET N-CH 650V 7.3A TO251-3

Infineon Technologies

5,655 -
IPS65R600E6AKMA1

数据表

CoolMOS™ E6 TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V Through Hole 3.5V @ 210µA 23 nC @ 10 V 650 V ±20V 440 pF @ 100 V - - PG-TO251-3-11 - 63W (Tc) -55°C ~ 150°C (TJ)
IPW65R190CFDAFKSA1

IPW65R190CFDAFKSA1

MOSFET N-CH 650V 17.5A TO247-3

Infineon Technologies

6,525 -
IPW65R190CFDAFKSA1

数据表

CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V Through Hole 4.5V @ 700µA 68 nC @ 10 V 650 V ±20V 1850 pF @ 100 V AEC-Q101 - PG-TO247-3 Automotive 151W (Tc) -40°C ~ 150°C (TJ)
IPW80R290C3AFKSA1

IPW80R290C3AFKSA1

MOSFET N-CH 800V TO247

Infineon Technologies

5,662 -
IPW80R290C3AFKSA1

数据表

* - Tube Obsolete - - - - - - - - - - - - - - - - -
IPZ60R125P6FKSA1

IPZ60R125P6FKSA1

MOSFET N-CH 600V 37.9A TO247-4

Infineon Technologies

6,737 -
IPZ60R125P6FKSA1

数据表

CoolMOS™ P6 TO-247-4 Tube Obsolete N-Channel MOSFET (Metal Oxide) 37.9A (Tc) 10V 99mOhm @ 14.5A, 10V Through Hole 4.5V @ 1.21mA 70 nC @ 10 V 600 V ±20V 3330 pF @ 100 V - - PG-TO247-4 - 219W (Tc) -55°C ~ 150°C (TJ)
DMT69M5LCG-13

DMT69M5LCG-13

MOSFET BVDSS: 61V~100V V-DFN3333

Diodes Incorporated

8,177 -
DMT69M5LCG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14.6A (Ta), 52.1A (Tc) 4.5V, 10V 8.3mOhm @ 13.5A, 10V Surface Mount 2.5V @ 250µA 28.4 nC @ 10 V 60 V ±20V 1406 pF @ 30 V - - V-DFN3333-8 (Type B) - 1.37W (Ta) -55°C ~ 150°C (TJ)
AOI4184

AOI4184

MOSFET N-CH 40V 12A/50A TO251A

Alpha & Omega Semiconductor Inc.

9,289 -
AOI4184

数据表

- TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 12A (Ta), 50A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V Through Hole 2.6V @ 250µA 33 nC @ 10 V 40 V ±20V 1800 pF @ 20 V - - TO-251A - 2.3W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
AOI2N60

AOI2N60

MOSFET N-CH 600V 2A TO251A

Alpha & Omega Semiconductor Inc.

3,917 -
AOI2N60

数据表

- TO-251-3 Stub Leads, IPAK Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.4Ohm @ 1A, 10V Through Hole 4.5V @ 250µA 11 nC @ 10 V 600 V ±30V 325 pF @ 25 V - - TO-251A - 56.8W (Tc) -50°C ~ 150°C (TJ)
CSD19538Q2R

CSD19538Q2R

100-V, N CHANNEL NEXFET POWER MO

Texas Instruments

5,717 -
CSD19538Q2R

数据表

NexFET™ 6-WDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.6A (Ta), 13.1A (Tc) 6V, 10V 59mOhm @ 5A, 10V Surface Mount 3.8V @ 250µA 5.6 nC @ 10 V 100 V ±20V 454 pF @ 50 V - - 6-WSON (2x2) - 2.5W (Ta), 20.2W (Tc) -55°C ~ 150°C (TJ)
SN7002WH6433XTMA1

SN7002WH6433XTMA1

MOSFET N-CH 60V 230MA SOT-323

Infineon Technologies

6,697 -
SN7002WH6433XTMA1

数据表

* - Tape & Reel (TR) Obsolete - - - 4.5V, 10V - - - - - ±20V - - - - - - -
NDS9410A

NDS9410A

MOSFET N-CH 30V 7.3A 8SOIC

onsemi

6,835 -
NDS9410A

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Ta) 4.5V, 10V 28mOhm @ 7.3A, 10V Surface Mount 3V @ 250µA 22 nC @ 10 V 30 V ±20V 830 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
IPP45N06S4L08AKSA2

IPP45N06S4L08AKSA2

MOSFET N-CH 60V 45A TO220-3

Infineon Technologies

3,276 -
IPP45N06S4L08AKSA2

数据表

OptiMOS™ T2 TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 45A (Tc) 4.5V, 10V 8.2mOhm @ 45A, 10V Through Hole 2.2V @ 35µA 64 nC @ 10 V 60 V ±16V 4780 pF @ 25 V AEC-Q101 - PG-TO220-3-1 Automotive 71W (Tc) -55°C ~ 175°C (TJ)
NTMFS4C022NT3G

NTMFS4C022NT3G

MOSFET N-CH 30V 30A/136A 5DFN

onsemi

7,025 -
NTMFS4C022NT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Ta), 136A (Tc) 4.5V, 10V 1.7mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 45.2 nC @ 10 V 30 V ±20V 3071 pF @ 15 V - - 5-DFN (5x6) (8-SOFL) - 3.1W (Ta), 64W (Tc) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户