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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
MCG20N06HE3-TP

MCG20N06HE3-TP

N-CHANNEL MOSFET,PDFN3333

Micro Commercial Co

3,852 -
MCG20N06HE3-TP

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 28mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 10 V 60 V ±20V 1200 pF @ 25 V AEC-Q101 - PDFN3333 Automotive 32W (Tj) -55°C ~ 150°C (TJ)
IPC100N04S402ATMA1

IPC100N04S402ATMA1

MOSFET N-CH 40V 100A 8TDSON

Infineon Technologies

7,989 -
IPC100N04S402ATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 2.4mOhm @ 50A, 10V Surface Mount 4V @ 80µA 105 nC @ 10 V 40 V ±20V 8100 pF @ 25 V AEC-Q101 - PG-TDSON-8-23 Automotive 150W (Tc) -55°C ~ 175°C (TJ)
DI001N65PTK

DI001N65PTK

MOSFET POWERQFN 3X3 N 650V

Diotec Semiconductor

7,517 -
DI001N65PTK

数据表

- 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 1.6Ohm @ 1A, 10V Surface Mount 2.5V @ 250µA 5.8 nC @ 10 V 650 V ±20V 209 pF @ 350 V - - 8-QFN (3x3) - 31.2W (Tc) -55°C ~ 150°C (TJ)
IPD65R650CEATMA1

IPD65R650CEATMA1

MOSFET N-CH 650V 10.1A TO252-3

Infineon Technologies

7,288 -
IPD65R650CEATMA1

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.1A (Tc) 10V 650mOhm @ 2.1A, 10V Surface Mount 3.5V @ 210µA 23 nC @ 10 V 650 V ±20V 440 pF @ 100 V - - PG-TO252-3 - 86W (Tc) -40°C ~ 150°C (TJ)
TSM4NC60CI C0G

TSM4NC60CI C0G

MOSFET N-CH 600V 4A ITO220AB

Taiwan Semiconductor Corporation

8,026 -
TSM4NC60CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.5Ohm @ 1.3A, 10V Through Hole 4V @ 250µA 18 nC @ 10 V 600 V ±30V 654 pF @ 50 V - - ITO-220AB - 40W (Tc) -55°C ~ 150°C (TJ)
IPD85P04P407ATMA1

IPD85P04P407ATMA1

MOSFET P-CH 40V 85A TO252-3

Infineon Technologies

2,472 -
IPD85P04P407ATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 85A (Tc) 10V 7.3mOhm @ 85A, 10V Surface Mount 4V @ 150µA 89 nC @ 10 V 40 V ±20V 6085 pF @ 25 V AEC-Q101 - PG-TO252-3-313 Automotive 88W (Tc) -55°C ~ 175°C (TJ)
IPI120N08S403AKSA1

IPI120N08S403AKSA1

MOSFET N-CH 80V 120A TO262-3

Infineon Technologies

4,497 -
IPI120N08S403AKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 2.8mOhm @ 100A, 10V Through Hole 4V @ 223µA 167 nC @ 10 V 80 V ±20V 11550 pF @ 25 V AEC-Q101 - PG-TO262-3-1 Automotive 278W (Tc) -55°C ~ 175°C (TJ)
IPI120N08S404AKSA1

IPI120N08S404AKSA1

MOSFET N-CH 80V 120A TO262-3

Infineon Technologies

5,070 -
IPI120N08S404AKSA1

数据表

OptiMOS™ T2 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 4.4mOhm @ 100A, 10V Through Hole 4V @ 120µA 95 nC @ 10 V 80 V ±20V 6450 pF @ 25 V AEC-Q101 - PG-TO262-3-1 Automotive 179W (Tc) -55°C ~ 175°C (TJ)
IPI120N10S403AKSA1

IPI120N10S403AKSA1

MOSFET N-CH 100V 120A TO262-3

Infineon Technologies

9,857 -
IPI120N10S403AKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.9mOhm @ 100A, 10V Through Hole 3.5V @ 180µA 140 nC @ 10 V 100 V ±20V 10120 pF @ 25 V AEC-Q101 - PG-TO262-3-1 Automotive 250W (Tc) -55°C ~ 175°C (TJ)
IPI120N10S405AKSA1

IPI120N10S405AKSA1

MOSFET N-CH 100V 120A TO262-3

Infineon Technologies

8,076 -
IPI120N10S405AKSA1

数据表

OptiMOS™ T2 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 5.3mOhm @ 100A, 10V Through Hole 3.5V @ 120µA 91 nC @ 10 V 100 V ±20V 6540 pF @ 25 V AEC-Q101 - PG-TO262-3-1 Automotive 190W (Tc) -55°C ~ 175°C (TJ)
DMP4026LSSQ-13

DMP4026LSSQ-13

MOSFET BVDSS: 31V~40V SO-8 T&R 2

Diodes Incorporated

7,579 -
DMP4026LSSQ-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 7.2A (Ta) 4.5V, 10V 25mOhm @ 3A, 10V Surface Mount 1.8V @ 250µA 45 nC @ 10 V 40 V ±20V 2083 pF @ 20 V AEC-Q101 - 8-SO Automotive 1.5W (Ta) -55°C ~ 150°C (TJ)
STQ3N45K3-AP

STQ3N45K3-AP

MOSFET N-CH 450V 600MA TO92-3

STMicroelectronics

3,821 -
STQ3N45K3-AP

数据表

SuperMESH3™ TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete N-Channel MOSFET (Metal Oxide) 600mA (Tc) 10V 3.8Ohm @ 500mA, 10V Through Hole 4.5V @ 50µA 6 nC @ 10 V 450 V ±30V 150 pF @ 25 V - - TO-92-3 - 3W (Tc) 150°C (TJ)
DMN39M1LFVWQ-13

DMN39M1LFVWQ-13

LINEAR IC

Diodes Incorporated

2,366 -
DMN39M1LFVWQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 87A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 40 nC @ 10 V 30 V ±20V 2387 pF @ 15 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 1.3W (Ta) -55°C ~ 150°C (TJ)
IPS60R1K5CEAKMA1

IPS60R1K5CEAKMA1

CONSUMER

Infineon Technologies

6,368 -
IPS60R1K5CEAKMA1

数据表

CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.5Ohm @ 1.1A, 10V Through Hole 3.5V @ 90µA 9.4 nC @ 10 V 600 V ±20V 200 pF @ 100 V - - PG-TO251-3 - 49W (Tc) -40°C ~ 150°C (TJ)
AOD456A

AOD456A

MOSFET N-CH 25V 50A TO252

Alpha & Omega Semiconductor Inc.

6,744 -
AOD456A

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V Surface Mount 3V @ 250µA 38 nC @ 10 V 25 V ±20V 2220 pF @ 12.5 V - - TO-252 (DPAK) - 3W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
AOD472

AOD472

MOSFET N-CH 25V 55A TO252

Alpha & Omega Semiconductor Inc.

4,616 -
AOD472

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 50 nC @ 10 V 25 V ±20V 2460 pF @ 12.5 V - - TO-252 (DPAK) - 2.5W (Ta), 60W (Tc) -55°C ~ 175°C (TJ)
TSM2N60ECH C5G

TSM2N60ECH C5G

MOSFET N-CHANNEL 600V 2A TO251

Taiwan Semiconductor Corporation

8,846 -
TSM2N60ECH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4Ohm @ 1A, 10V Through Hole 5V @ 250µA 9.5 nC @ 10 V 600 V ±30V 362 pF @ 25 V - - TO-251 (IPAK) - 52.1W (Tc) -55°C ~ 150°C (TJ)
DI068N03PQ

DI068N03PQ

MOSFET POWERQFN 5X6 N 30V

Diotec Semiconductor

4,385 -
DI068N03PQ

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 68A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 79 nC @ 10 V 30 V ±20V 3650 pF @ 15 V - - 8-QFN (5x6) - 25W (Tc) -55°C ~ 150°C (TJ)
DI035P02PT

DI035P02PT

MOSFET POWERQFN 3X3 P -20V

Diotec Semiconductor

9,385 -
DI035P02PT

数据表

- 8-PowerVDFN Bulk Active P-Channel MOSFET (Metal Oxide) 35A (Tc) 2.5V, 10V 3.9mOhm @ 20A, 10V Surface Mount 1.2V @ 250µA 58 nC @ 10 V 20 V ±12V 6850 pF @ 10 V - - 8-QFN (3x3) - 52W (Tc) -55°C ~ 150°C (TJ)
DMTH6016LFDFWQ-13

DMTH6016LFDFWQ-13

MOSFET N-CH 60V 9.4A 6UDFN

Diodes Incorporated

7,771 -
DMTH6016LFDFWQ-13

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.4A (Ta) 4.5V, 10V 18mOhm @ 10A, 10V Surface Mount 3V @ 250µA 15.3 nC @ 10 V 60 V ±20V 925 pF @ 30 V AEC-Q101 - U-DFN2020-6 (SWP) (Type F) Automotive 1.06W (Ta) -55°C ~ 175°C (TJ)
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