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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BSP92P E6327

BSP92P E6327

MOSFET P-CH 250V 260MA SOT223-4

Infineon Technologies

8,703 -
BSP92P E6327

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 260mA (Ta) 2.8V, 10V 12Ohm @ 260mA, 10V Surface Mount 2V @ 130µA 5.4 nC @ 10 V 250 V ±20V 104 pF @ 25 V - - PG-SOT223-4 - 1.8W (Ta) -55°C ~ 150°C (TJ)
FQD3N30TM

FQD3N30TM

MOSFET N-CH 300V 2.4A DPAK

onsemi

2,200 -
FQD3N30TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 2.2Ohm @ 1.2A, 10V Surface Mount 5V @ 250µA 7 nC @ 10 V 300 V ±30V 230 pF @ 25 V - - TO-252AA - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
DMTH10H032LFVWQ-7

DMTH10H032LFVWQ-7

MOSFET BVDSS: 61V~100V PowerDI33

Diodes Incorporated

6,894 -
DMTH10H032LFVWQ-7

数据表

- 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 26A (Tc) 4.5V, 10V 30mOhm @ 10A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 11.9 nC @ 10 V 100 V ±20V 683 pF @ 50 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 1.7W (Ta) -55°C ~ 175°C (TJ)
FDC645N_F095

FDC645N_F095

MOSFET N-CH 30V 5.5A SUPERSOT6

onsemi

9,868 -
FDC645N_F095

数据表

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Ta) 4.5V, 10V 26mOhm @ 6.2A, 10V Surface Mount 2V @ 250µA 21 nC @ 4.5 V 30 V ±12V 1460 pF @ 15 V - - SuperSOT™-6 - 1.6W (Ta) -55°C ~ 150°C (TJ)
XP161A11A1PR-G

XP161A11A1PR-G

MOSFET N-CH 30V 4A SOT89

Torex Semiconductor Ltd

2,659 -
XP161A11A1PR-G

数据表

- TO-243AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Ta) 4.5V, 10V 65mOhm @ 2A, 10V Surface Mount - - 30 V ±20V 270 pF @ 10 V - - SOT-89 - 2W (Ta) 150°C (TJ)
XP162A11C0PR-G

XP162A11C0PR-G

MOSFET P-CH 30V 2.5A SOT89

Torex Semiconductor Ltd

5,693 -
XP162A11C0PR-G

数据表

- TO-243AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4.5V, 10V 150mOhm @ 1.5A, 10V Surface Mount - - 30 V ±20V 280 pF @ 10 V - - SOT-89 - 2W (Ta) 150°C (TJ)
AO4443

AO4443

MOSFET P-CH 40V 6A 8SOIC

Alpha & Omega Semiconductor Inc.

2,487 -
AO4443

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 42mOhm @ 6A, 10V Surface Mount 2.6V @ 250µA 22 nC @ 10 V 40 V ±20V 1175 pF @ 20 V - - 8-SOIC - 3.1W (Ta) -55°C ~ 150°C (TJ)
AON2392

AON2392

MOSFET N-CHANNEL 100V 8A 8DFN

Alpha & Omega Semiconductor Inc.

9,356 -
AON2392

数据表

AlphaSGT™ 8-PowerWFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Ta) 4.5V, 10V 32mOhm @ 8A, 10V Surface Mount 2.4V @ 250µA 25 nC @ 10 V 100 V ±20V 840 pF @ 50 V - - 8-DFN (2x2) - 4.1W (Ta) -55°C ~ 150°C (TJ)
IPI120P04P4L03AKSA1

IPI120P04P4L03AKSA1

MOSFET P-CH 40V 120A TO262-3

Infineon Technologies

8,811 -
IPI120P04P4L03AKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V Through Hole 2.2V @ 340µA 234 nC @ 10 V 40 V ±16V 15000 pF @ 25 V AEC-Q101 - PG-TO262-3-1 Automotive 136W (Tc) -55°C ~ 175°C (TJ)
IPI65R280E6XKSA1

IPI65R280E6XKSA1

MOSFET N-CH 650V 13.8A TO262-3

Infineon Technologies

9,829 -
IPI65R280E6XKSA1

数据表

CoolMOS™ E6 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V Through Hole 3.5V @ 440µA 45 nC @ 10 V 650 V ±20V 950 pF @ 100 V - - PG-TO262-3-1 - 104W (Tc) -55°C ~ 150°C (TJ)
IPI80P03P405AKSA1

IPI80P03P405AKSA1

MOSFET P-CH 30V 80A TO262-3

Infineon Technologies

4,711 -
IPI80P03P405AKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 5mOhm @ 80A, 10V Through Hole 4V @ 253µA 130 nC @ 10 V 30 V ±20V 10300 pF @ 25 V AEC-Q101 - PG-TO262-3-1 Automotive 137W (Tc) -55°C ~ 175°C (TJ)
IPI80P04P405AKSA1

IPI80P04P405AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies

8,067 -
IPI80P04P405AKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 5.2mOhm @ 80A, 10V Through Hole 4V @ 250µA 151 nC @ 10 V 40 V ±20V 10300 pF @ 25 V AEC-Q101 - PG-TO262-3-1 Automotive 125W (Tc) -55°C ~ 175°C (TJ)
DMPH4029LFGQ-13

DMPH4029LFGQ-13

MOSFET P-CH 40V 8A/22A PWRDI3333

Diodes Incorporated

5,318 -
DMPH4029LFGQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8A (Ta), 22A (Tc) 4.5V, 10V 29mOhm @ 3A, 10V Surface Mount 3V @ 250µA 34 nC @ 10 V 40 V ±20V 1626 pF @ 20 V AEC-Q101 - POWERDI3333-8 Automotive 1.2W (Ta) -55°C ~ 175°C (TJ)
NVMFS5C682NLWFT1G

NVMFS5C682NLWFT1G

MOSFET N-CH 60V 5DFN

onsemi

4,526 -
NVMFS5C682NLWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 21mOhm @ 10A, 10V Surface Mount 2V @ 16µA 5 nC @ 10 V 60 V ±20V 410 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.5W (Ta), 28W (Tc) -55°C ~ 175°C (TJ)
IPI80P04P4L04AKSA1

IPI80P04P4L04AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies

8,204 -
IPI80P04P4L04AKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V Through Hole 2.2V @ 250µA 176 nC @ 10 V 40 V +5V, -16V 3800 pF @ 25 V AEC-Q101 - PG-TO262-3-1 Automotive 125W (Tc) -55°C ~ 175°C (TJ)
SN7002W E6327

SN7002W E6327

MOSFET N-CH 60V 230MA SOT323-3

Infineon Technologies

4,675 -
SN7002W E6327

数据表

SIPMOS® SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 230mA (Ta) 4.5V, 10V 5Ohm @ 230mA, 10V Surface Mount 1.8V @ 26µA 1.5 nC @ 10 V 60 V ±20V 45 pF @ 25 V - - PG-SOT323 - 500mW (Ta) -55°C ~ 150°C (TJ)
IPL65R165CFDAUMA1

IPL65R165CFDAUMA1

MOSFET N-CH 650V 21.3A 4VSON

Infineon Technologies

6,819 -
IPL65R165CFDAUMA1

数据表

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21.3A (Tc) 10V 165mOhm @ 9.3A, 10V Surface Mount 4.5V @ 900µA 86 nC @ 10 V 650 V ±20V 2340 pF @ 100 V - - PG-VSON-4 - 195W (Tc) -40°C ~ 150°C (TJ)
SI2372DS-T1-GE3

SI2372DS-T1-GE3

MOSFET N-CH 30V 4A/5.3A SOT23-3

Vishay Siliconix

7,797 -
SI2372DS-T1-GE3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4A (Ta), 5.3A (Tc) 4.5V, 10V 33mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA 8.9 nC @ 10 V 30 V ±20V 288 pF @ 15 V - - SOT-23-3 (TO-236) - 960mW (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ)
IPL65R190E6AUMA1

IPL65R190E6AUMA1

MOSFET N-CH 650V 20.2A 4VSON

Infineon Technologies

7,482 -
IPL65R190E6AUMA1

数据表

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V Surface Mount 3.5V @ 700µA 73 nC @ 10 V 650 V ±20V 1620 pF @ 100 V - - PG-VSON-4 - 151W (Tc) -40°C ~ 150°C (TJ)
PHD36N03LT,118

PHD36N03LT,118

MOSFET N-CH 30V 43.4A DPAK

NXP USA Inc.

6,960 -
PHD36N03LT,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 43.4A (Tc) 4.5V, 10V 17mOhm @ 25A, 10V Surface Mount 2V @ 250µA 18.5 nC @ 10 V 30 V ±20V 690 pF @ 25 V - - DPAK - 57.6W (Tc) -55°C ~ 175°C (TJ)
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