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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPL65R210CFDAUMA1

IPL65R210CFDAUMA1

MOSFET N-CH 650V 16.6A 4VSON

Infineon Technologies

6,956 -
IPL65R210CFDAUMA1

数据表

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16.6A (Tc) 10V 210mOhm @ 7.3A, 10V Surface Mount 4.5V @ 700µA 68 nC @ 10 V 650 V ±20V 1850 pF @ 100 V - - PG-VSON-4 - 151W (Tc) -40°C ~ 150°C (TJ)
IPL65R310E6AUMA1

IPL65R310E6AUMA1

MOSFET N-CH 650V 13.1A THIN-PAK

Infineon Technologies

2,333 -
IPL65R310E6AUMA1

数据表

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13.1A (Tc) 10V 310mOhm @ 4.4A, 10V Surface Mount 3.5V @ 400µA 45 nC @ 10 V 650 V ±20V 950 pF @ 100 V - - PG-VSON-4 - 104W (Tc) -40°C ~ 150°C (TJ)
SYC0102BLT1G

SYC0102BLT1G

SCR 0.25A GATE SCR

Littelfuse Inc.

9,411 -
SYC0102BLT1G

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPL65R340CFDAUMA1

IPL65R340CFDAUMA1

MOSFET N-CH 650V 10.9A THIN-PAK

Infineon Technologies

4,797 -
IPL65R340CFDAUMA1

数据表

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.9A (Tc) 10V 340mOhm @ 4.4A, 10V Surface Mount 4.5V @ 400µA 41 nC @ 10 V 650 V ±20V 1100 pF @ 100 V - - PG-VSON-4 - 104.2W (Tc) -40°C ~ 150°C (TJ)
SIB800EDK-T1-GE3

SIB800EDK-T1-GE3

MOSFET N-CH 20V 1.5A PPAK SC75-6

Vishay Siliconix

8,175 -
SIB800EDK-T1-GE3

数据表

LITTLE FOOT® PowerPAK® SC-75-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Tc) 1.5V, 4.5V 225mOhm @ 1.6A, 4.5V Surface Mount 1V @ 250µA 1.7 nC @ 4.5 V 20 V ±6V - - Schottky Diode (Isolated) PowerPAK® SC-75-6 - 1.1W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ)
SI1413DH-T1-E3

SI1413DH-T1-E3

MOSFET P-CH 20V 2.3A SC70-6

Vishay Siliconix

2,644 -
SI1413DH-T1-E3

数据表

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.3A (Ta) 1.8V, 4.5V 115mOhm @ 2.9A, 4.5V Surface Mount 800mV @ 100µA 8.5 nC @ 4.5 V 20 V ±8V - - - SC-70-6 - 1W (Ta) -55°C ~ 150°C (TJ)
SI2316DS-T1-GE3

SI2316DS-T1-GE3

MOSFET N-CH 30V 2.9A SOT23-3

Vishay Siliconix

2,694 -
SI2316DS-T1-GE3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.9A (Ta) 4.5V, 10V 50mOhm @ 3.4A, 10V Surface Mount 800mV @ 250µA (Min) 7 nC @ 10 V 30 V ±20V 215 pF @ 15 V - - SOT-23-3 (TO-236) - 700mW (Ta) -55°C ~ 150°C (TJ)
MCU30P03-TP

MCU30P03-TP

MOSFET

Micro Commercial Co

3,537 -
MCU30P03-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 13mOhm @ 20A, 10V Surface Mount 2V @ 250µA 35 nC @ 10 V 30 V ±20V 1719 pF @ 25 V - - TO-252 (DPAK) - 62.5W (Tj) -55°C ~ 150°C (TJ)
TSM900N10CH X0G

TSM900N10CH X0G

MOSFET N-CH 100V 15A TO251

Taiwan Semiconductor Corporation

7,604 -
TSM900N10CH X0G

数据表

- TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 90mOhm @ 5A, 10V Through Hole 2.5V @ 250µA 9.3 nC @ 10 V 100 V ±20V 1480 pF @ 50 V - - TO-251 (IPAK) - 50W (Tc) -55°C ~ 150°C (TJ)
DI050P03PT-AQ

DI050P03PT-AQ

MOSFET POWERQFN 3X3 P -30V

Diotec Semiconductor

9,411 -
DI050P03PT-AQ

数据表

- 8-PowerVDFN Bulk Active P-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 70 nC @ 10 V 30 V ±20V 3721 pF @ 15 V AEC-Q101 - 8-QFN (3x3) Automotive 39W (Tc) -55°C ~ 150°C (TJ)
DMP1022UWS-13

DMP1022UWS-13

MOSFET P-CH 12V 7.2A 8DFN

Diodes Incorporated

6,241 -
DMP1022UWS-13

数据表

- 8-VDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 7.2A (Ta) 1.8V, 4.5V 18mOhm @ 9A, 4.5V Surface Mount 1V @ 250µA 30 nC @ 5 V 12 V ±8V 2847 pF @ 4 V - - V-DFN3020-8 - 900mW (Ta) -55°C ~ 150°C (TJ)
DMPH4029LFG-7

DMPH4029LFG-7

MOSFET P-CH 40V 8A/22A PWRDI3333

Diodes Incorporated

8,975 -
DMPH4029LFG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8A (Ta), 22A (Tc) 4.5V, 10V 29mOhm @ 3A, 10V Surface Mount 3V @ 250µA 34 nC @ 10 V 40 V ±20V 1626 pF @ 20 V - - POWERDI3333-8 - 1.2W (Ta) -55°C ~ 175°C (TJ)
IPD135N03LGBTMA1

IPD135N03LGBTMA1

LV POWER MOS

Infineon Technologies

8,150 -
IPD135N03LGBTMA1

数据表

OptiMOS™ 3 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 13.5mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 10 nC @ 10 V 30 V ±20V 1000 pF @ 15 V - - PG-TO252-3 - 31W (Tc) -55°C ~ 175°C (TJ)
FQPF9N08

FQPF9N08

MOSFET N-CH 80V 7A TO220F

onsemi

3,829 -
FQPF9N08

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 210mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 7.7 nC @ 10 V 80 V ±25V 250 pF @ 25 V - - TO-220F-3 - 23W (Tc) -55°C ~ 175°C (TJ)
IRL510A

IRL510A

MOSFET N-CH 100V 5.6A TO220-3

onsemi

8,692 -
IRL510A

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.6A (Tc) 5V 440mOhm @ 2.8A, 5V Through Hole 2V @ 250µA 8 nC @ 5 V 100 V ±20V 235 pF @ 25 V - - TO-220-3 - 37W (Tc) -55°C ~ 175°C (TJ)
FQU13N10TU

FQU13N10TU

MOSFET N-CH 100V 10A IPAK

onsemi

5,974 -
FQU13N10TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 180mOhm @ 5A, 10V Through Hole 4V @ 250µA 16 nC @ 10 V 100 V ±25V 450 pF @ 25 V - - IPAK - 2.5W (Ta), 40W (Tc) -55°C ~ 150°C (TJ)
ZXMN0545FFTA

ZXMN0545FFTA

MOSFET N-CH 450V SOT23F-3

Diodes Incorporated

9,794 -
ZXMN0545FFTA

数据表

- SOT-23-3 Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 450 V - - - - SOT-23F - 1.5W (Ta) -
CMS06N10V8-HF

CMS06N10V8-HF

MOSFET N-CH 100V 6.8A 8DFN

Comchip Technology

5,049 -
CMS06N10V8-HF

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.8A (Tc) 4.5V, 10V 105mOhm @ 6A, 10V Surface Mount 2.5V @ 250µA 26.2 nC @ 10 V 100 V ±20V 1535 pF @ 15 V - - 8-PDFN (SPR-PAK ) (3.3x3.3) - 1.7W (Ta), 10.4W (Tc) -55°C ~ 150°C (TJ)
MCT04P06Y-TP

MCT04P06Y-TP

MOSFET

Micro Commercial Co

9,865 -
MCT04P06Y-TP

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A 4.5V, 10V 85mOhm @ 4A, 10V Surface Mount 2.5V @ 250µA 4.27 nC @ 4.5 V 60 V ±20V 505 pF @ 15 V - - SOT-223 - 2W -55°C ~ 150°C (TJ)
IPL65R420E6AUMA1

IPL65R420E6AUMA1

MOSFET N-CH 650V 10.1A THIN-PAK

Infineon Technologies

6,988 -
IPL65R420E6AUMA1

数据表

CoolMOS™ E6 4-PowerTSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.1A (Tc) 10V 420mOhm @ 3.4A, 10V Surface Mount 3.5V @ 300µA 39 nC @ 10 V 650 V ±20V 710 pF @ 100 V - - PG-VSON-4 - 83W (Tc) -40°C ~ 150°C (TJ)
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