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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BSS192PH6327XTSA1

BSS192PH6327XTSA1

MOSFET P-CH 250V 190MA SOT89

Infineon Technologies

4,991 -
BSS192PH6327XTSA1

数据表

SIPMOS™ TO-243AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 190mA (Ta) 2.8V, 10V 12Ohm @ 190mA, 10V Surface Mount 2V @ 130µA 6.1 nC @ 10 V 250 V ±20V 104 pF @ 25 V - - PG-SOT89 - 1W (Ta) -55°C ~ 150°C (TJ)
IPD15N06S2L64ATMA1

IPD15N06S2L64ATMA1

MOSFET N-CH 55V 19A TO252-3

Infineon Technologies

4,293 -
IPD15N06S2L64ATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 19A (Tc) 4.5V, 10V 64mOhm @ 13A, 10V Surface Mount 2V @ 14µA 13 nC @ 10 V 55 V ±20V 354 pF @ 25 V - - PG-TO252-3-11 - 47W (Tc) -55°C ~ 175°C (TJ)
AOU3N60

AOU3N60

MOSFET N-CH 600V 2.5A TO251-3

Alpha & Omega Semiconductor Inc.

5,802 -
AOU3N60

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 3.5Ohm @ 1.25A, 10V Through Hole 4.5V @ 250µA 12 nC @ 10 V 600 V ±30V 370 pF @ 25 V - - TO-251-3 - 56.8W (Tc) -50°C ~ 150°C (TJ)
DMTH8028LFVW-7

DMTH8028LFVW-7

MOSFET BVDSS: 61V~100V POWERDI33

Diodes Incorporated

6,131 -
DMTH8028LFVW-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Tc) 4.5V, 10V 25mOhm @ 5A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 10.4 nC @ 10 V 80 V ±20V 631 pF @ 40 V - - PowerDI3333-8 (SWP) Type UX - 1.5W (Ta) -55°C ~ 175°C (TJ)
BSS225H6327XTSA1

BSS225H6327XTSA1

MOSFET N-CH 600V 90MA SOT89

Infineon Technologies

4,372 -
BSS225H6327XTSA1

数据表

SIPMOS™ TO-243AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90mA (Ta) 4.5V, 10V 45Ohm @ 90mA, 10V Surface Mount 2.3V @ 94µA 5.8 nC @ 10 V 600 V ±20V 131 pF @ 25 V - - PG-SOT89 - 1W (Ta) -55°C ~ 150°C (TJ)
IPB065N10N3GATMA1

IPB065N10N3GATMA1

MOSFET N-CH 100V 80A D2PAK

Infineon Technologies

4,885 -
IPB065N10N3GATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 6V, 10V 6.5mOhm @ 80A, 10V Surface Mount 3.5V @ 90µA 64 nC @ 10 V 100 V ±20V 4910 pF @ 50 V - - PG-TO263-3 - 150W (Tc) -55°C ~ 175°C (TJ)
IPB120N04S404ATMA1

IPB120N04S404ATMA1

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies

9,311 -
IPB120N04S404ATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.6mOhm @ 100A, 10V Surface Mount 4V @ 40µA 55 nC @ 10 V 40 V ±20V 4100 pF @ 25 V AEC-Q101 - PG-TO263-3 Automotive 79W (Tc) -55°C ~ 175°C (TJ)
IPB120P04P404ATMA1

IPB120P04P404ATMA1

MOSFET P-CH 40V 120A D2PAK

Infineon Technologies

5,900 -
IPB120P04P404ATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.5mOhm @ 100A, 10V Surface Mount 4V @ 340µA 205 nC @ 10 V 40 V ±20V 14790 pF @ 25 V AEC-Q101 - PG-TO263-3 Automotive 136W (Tc) -55°C ~ 175°C (TJ)
IPB140N08S404ATMA1

IPB140N08S404ATMA1

MOSFET N-CH 80V 140A TO263-7

Infineon Technologies

7,567 -
IPB140N08S404ATMA1

数据表

OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 140A (Tc) 10V 4.2mOhm @ 100A, 10V Surface Mount 4V @ 100µA 80 nC @ 10 V 80 V ±20V 5500 pF @ 25 V AEC-Q101 - PG-TO263-7-3 Automotive 161W (Tc) -55°C ~ 175°C (TJ)
IPB160N08S403ATMA1

IPB160N08S403ATMA1

MOSFET N-CH 80V 160A TO263-7

Infineon Technologies

2,135 -
IPB160N08S403ATMA1

数据表

OptiMOS™ T2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 3.2mOhm @ 100A, 10V Surface Mount 4V @ 150µA 112 nC @ 10 V 80 V ±20V 7750 pF @ 25 V AEC-Q101 - PG-TO263-7-3 Automotive 208W (Tc) -55°C ~ 175°C (TJ)
IPB45P03P4L11ATMA1

IPB45P03P4L11ATMA1

MOSFET P-CH 30V 45A TO263-3

Infineon Technologies

9,975 -
IPB45P03P4L11ATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 45A (Tc) 4.5V, 10V 10.8mOhm @ 45A, 10V Surface Mount 2V @ 85µA 55 nC @ 10 V 30 V +5V, -16V 3770 pF @ 25 V AEC-Q101 - PG-TO263-3-2 Automotive 58W (Tc) -55°C ~ 175°C (TJ)
IPB60R330P6ATMA1

IPB60R330P6ATMA1

MOSFET N-CH 600V 12A D2PAK

Infineon Technologies

9,469 -
IPB60R330P6ATMA1

数据表

CoolMOS™ P6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 330mOhm @ 4.5A, 10V Surface Mount 4.5V @ 370µA 22 nC @ 10 V 600 V ±20V 1010 pF @ 100 V - - PG-TO263-3 - 93W (Tc) -55°C ~ 150°C (TJ)
IPB60R600P6ATMA1

IPB60R600P6ATMA1

MOSFET N-CH 600V 7.3A D2PAK

Infineon Technologies

7,422 -
IPB60R600P6ATMA1

数据表

CoolMOS™ P6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V Surface Mount 4.5V @ 200µA 12 nC @ 10 V 600 V ±20V 557 pF @ 100 V - - PG-TO263-3 - 63W (Tc) -55°C ~ 150°C (TJ)
IPB65R065C7ATMA1

IPB65R065C7ATMA1

MOSFET N-CH 600V 7.3A D2PAK

Infineon Technologies

6,704 -
IPB65R065C7ATMA1

数据表

CoolMOS™ P6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V Surface Mount 4.5V @ 200µA 12 nC @ 10 V 600 V ±20V 557 pF @ 100 V - - PG-TO263-3 - 171W (Tc) -55°C ~ 150°C (TJ)
IPB65R095C7ATMA1

IPB65R095C7ATMA1

MOSFET N-CH 650V 24A D2PAK

Infineon Technologies

9,256 -
IPB65R095C7ATMA1

数据表

CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 95mOhm @ 11.8A, 10V Surface Mount 4V @ 590µA 45 nC @ 10 V 650 V ±20V 2140 pF @ 400 V - - PG-TO263-3 - 128W (Tc) -55°C ~ 150°C (TJ)
IPB65R125C7ATMA1

IPB65R125C7ATMA1

MOSFET N-CH 650V 18A D2PAK

Infineon Technologies

8,166 -
IPB65R125C7ATMA1

数据表

CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 18A (Ta) 10V 125mOhm @ 8.9A, 10V Surface Mount 4V @ 440µA 35 nC @ 10 V 650 V ±20V 1670 pF @ 400 V - - PG-TO263-3 - 101W (Tc) -55°C ~ 150°C (TJ)
IPB65R190C7ATMA1

IPB65R190C7ATMA1

MOSFET N-CH 650V 13A D2PAK

Infineon Technologies

3,062 -
IPB65R190C7ATMA1

数据表

CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 190mOhm @ 5.7A, 10V Surface Mount 4V @ 290µA 23 nC @ 10 V 650 V ±20V 1150 pF @ 400 V - - PG-TO263-3 - 72W (Tc) -55°C ~ 150°C (TJ)
IPB65R280E6ATMA1

IPB65R280E6ATMA1

MOSFET N-CH 650V 13.8A D2PAK

Infineon Technologies

4,815 -
IPB65R280E6ATMA1

数据表

CoolMOS™ E6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V Surface Mount 3.5V @ 440µA 45 nC @ 10 V 650 V ±20V 950 pF @ 100 V - - PG-TO263-3 - 104W (Tc) -55°C ~ 150°C (TJ)
DMN7022LFG-13

DMN7022LFG-13

MOSFET N-CH 75V 7.8A PWRDI3333-8

Diodes Incorporated

3,249 -
DMN7022LFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.8A (Ta) 4.5V, 10V 22mOhm @ 7.2A, 10V Surface Mount 3V @ 250µA 56.5 nC @ 10 V 75 V ±20V 2737 pF @ 35 V - - POWERDI3333-8 - 900mW (Ta) -55°C ~ 150°C (TJ)
IPB80R290C3AATMA1

IPB80R290C3AATMA1

MOSFET P-CH TO263-3

Infineon Technologies

4,887 -
IPB80R290C3AATMA1

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
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