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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
MCH6436-TL-W

MCH6436-TL-W

MOSFET N-CH 30V 6A SC88FL/MCPH6

onsemi

8,571 -
MCH6436-TL-W

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 1.8V, 4.5V 34mOhm @ 3A, 4.5V Surface Mount 1.3V @ 1mA 7.5 nC @ 4.5 V 30 V ±12V 710 pF @ 10 V - - SC-88FL/MCPH6 - 1.5W (Ta) 150°C (TJ)
CEDM8004 BK PBFREE

CEDM8004 BK PBFREE

MOSFET P-CH 30V 450MA SOT883

Central Semiconductor Corp

2,110 -
CEDM8004 BK PBFREE

数据表

- SC-101, SOT-883 Box Active P-Channel MOSFET (Metal Oxide) 450mA (Ta) 1.8V, 4.5V 1.1Ohm @ 430mA, 4.5V Surface Mount 1.1V @ 250µA 0.88 nC @ 4.5 V 30 V 8V 55 pF @ 25 V - - SOT-883 - 100mW (Ta) -65°C ~ 150°C (TJ)
DMP1022UFDF-13

DMP1022UFDF-13

MOSFET P-CH 12V 9.5A 6UDFN

Diodes Incorporated

6,836 -
DMP1022UFDF-13

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9.5A (Ta) 1.2V, 4.5V 14.8mOhm @ 4A, 4.5V Surface Mount 800mV @ 250µA 48.3 nC @ 4.5 V 12 V ±8V 2712 pF @ 10 V - - U-DFN2020-6 (Type F) - 730mW (Ta) -55°C ~ 150°C (TJ)
BSS119E6327

BSS119E6327

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies

9,849 -
BSS119E6327

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V Surface Mount 2.3V @ 50µA 2.5 nC @ 10 V 100 V ±20V 78 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
BSS119 E7978

BSS119 E7978

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies

2,741 -
BSS119 E7978

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V Surface Mount 2.3V @ 50µA 2.5 nC @ 10 V 100 V ±20V 78 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
DMN3016LFDF-7-90

DMN3016LFDF-7-90

MOSFET BVDSS: 25V~30V U-DFN2020-

Diodes Incorporated

6,156 -
DMN3016LFDF-7-90

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 12mOhm @ 11A, 10V Surface Mount 2V @ 250µA 25.1 nC @ 10 V 30 V ±20V 1415 pF @ 15 V - - U-DFN2020-6 (Type F) - 730mW (Ta) -55°C ~ 150°C (TJ)
IRL6283MTRPBF

IRL6283MTRPBF

MOSFET N-CH 20V 38A DIRECTFET

Infineon Technologies

3,209 -
IRL6283MTRPBF

数据表

HEXFET®, StrongIRFET™ DirectFET™ Isometric MD Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 38A (Ta), 211A (Tc) 2.5V, 4.5V 0.75mOhm @ 50A, 10V Surface Mount 1.1V @ 100µA 158 nC @ 4.5 V 20 V ±12V 8292 pF @ 10 V - - DIRECTFET™ MD - 2.1W (Ta), 63W (Tc) -40°C ~ 150°C (TJ)
EKI04036

EKI04036

MOSFET N-CH 40V 80A TO220-3

Sanken Electric USA Inc.

4,935 -
EKI04036

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 3.8mOhm @ 58.5A, 10V Through Hole 2.5V @ 1mA 63.2 nC @ 10 V 40 V ±20V 3910 pF @ 25 V - - TO-220-3 - 116W (Tc) 150°C (TJ)
EKI06108

EKI06108

MOSFET N-CH 60V 57A TO220-3

Sanken Electric USA Inc.

5,049 -
EKI06108

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 57A (Tc) 4.5V, 10V 9.2mOhm @ 28.5A, 10V Through Hole 2.5V @ 650µA 38.6 nC @ 10 V 60 V ±20V 2520 pF @ 25 V - - TO-220-3 - 90W (Tc) 150°C (TJ)
FKI06269

FKI06269

MOSFET N-CH 60V 24A TO220F

Sanken Electric USA Inc.

8,442 -
FKI06269

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 24A (Tc) 4.5V, 10V 21.8mOhm @ 15.8A, 10V Through Hole 2.5V @ 250µA 16 nC @ 10 V 60 V ±20V 1050 pF @ 25 V - - TO-220F - 29W (Tc) 150°C (TJ)
IRFHM8228TRPBF

IRFHM8228TRPBF

MOSFET N-CH 25V 19A 8PQFN

Infineon Technologies

9,060 -
IRFHM8228TRPBF

数据表

HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta) 4.5V, 10V 5.2mOhm @ 20A, 10V Surface Mount 2.35V @ 25µA 18 nC @ 10 V 25 V ±20V 1667 pF @ 10 V - - 8-PQFN (3.3x3.3), Power33 - 2.8W (Ta), 34W (Tc) -55°C ~ 150°C (TJ)
IPP50R399CPXKSA1

IPP50R399CPXKSA1

MOSFET N-CH 500V 9A TO220-3

Infineon Technologies

9,975 -
IPP50R399CPXKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta) 10V 399mOhm @ 4.9A, 10V Through Hole 3.5V @ 330µA 4 nC @ 10 V 500 V ±20V 890 pF @ 100 V - - PG-TO220-3 - 83W (Tc) -55°C ~ 150°C (TJ)
FDMC612PZ

FDMC612PZ

MOSFET P-CH 20V 14A 8MLP

onsemi

4,698 -
FDMC612PZ

数据表

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 14A (Ta) 2.5V, 4.5V 8.4mOhm @ 14A, 4.5V Surface Mount 1.5V @ 250µA 74 nC @ 4.5 V 20 V ±12V 7995 pF @ 10 V - - 8-MLP (3.3x3.3) - 2.3W (Ta), 26W (Tc) -55°C ~ 150°C (TJ)
FDB035AN06A0-F085

FDB035AN06A0-F085

MOSFET N-CH 60V 22A D2PAK

onsemi

7,562 -
FDB035AN06A0-F085

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22A (Ta) 10V 3.5mOhm @ 80A, 10V Surface Mount 4V @ 250µA 124 nC @ 10 V 60 V ±20V 6400 pF @ 25 V AEC-Q101 - TO-263 (D2PAK) Automotive 310W (Tc) -55°C ~ 175°C (TJ)
FDB3632-F085

FDB3632-F085

MOSFET N-CH 100V 12A TO263AB

onsemi

5,718 -
FDB3632-F085

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 9mOhm @ 80A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 100 V ±20V 6000 pF @ 25 V AEC-Q101 - TO-263 (D2PAK) Automotive 310W (Tc) -55°C ~ 175°C (TJ)
FDD10AN06A0-F085

FDD10AN06A0-F085

MOSFET N-CH 60V 11A TO252AA

onsemi

3,906 -
FDD10AN06A0-F085

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 10V 10.5mOhm @ 50A, 10V Surface Mount 4V @ 250µA 37 nC @ 10 V 60 V ±20V 1840 pF @ 25 V AEC-Q101 - TO-252AA Automotive 135W (Tc) -55°C ~ 175°C (TJ)
FDD8870-F085

FDD8870-F085

MOSFET N-CH 30V 21A TO252AA

onsemi

8,374 -
FDD8870-F085

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta) 4.5V, 10V 3.9mOhm @ 35A, 10V Surface Mount 2.5V @ 250µA 118 nC @ 10 V 30 V ±20V 5160 pF @ 15 V AEC-Q101 - TO-252AA Automotive 160W (Tc) -55°C ~ 175°C (TJ)
TK14C65W,S1Q

TK14C65W,S1Q

MOSFET N-CH 650V 13.7A I2PAK

Toshiba Semiconductor and Storage

4,153 -
TK14C65W,S1Q

数据表

DTMOSIV TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V Through Hole 3.5V @ 690µA 35 nC @ 10 V 650 V ±30V 1300 pF @ 300 V - - I2PAK - 130W (Tc) 150°C (TJ)
TK14C65W5,S1Q

TK14C65W5,S1Q

MOSFET N-CH 650V 13.7A I2PAK

Toshiba Semiconductor and Storage

9,642 -
TK14C65W5,S1Q

数据表

DTMOSIV TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V Through Hole 4.5V @ 690µA 40 nC @ 10 V 650 V ±30V 1300 pF @ 300 V - - I2PAK - 130W (Tc) 150°C (TJ)
SUP50N10-21P-GE3

SUP50N10-21P-GE3

MOSFET N-CH 100V 50A TO220AB

Vishay Siliconix

9,752 -
SUP50N10-21P-GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 6V, 10V 21mOhm @ 10A, 10V Through Hole 4V @ 250µA 68 nC @ 10 V 100 V ±20V 2055 pF @ 50 V - - TO-220AB - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
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