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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
NVBG045N065SC1 SIC MOS D2PAK-7L 650V onsemi	790	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	62A (Tc)	15V, 18V	50mOhm @ 25A, 18V	Surface Mount	4.3V @ 8mA	105 nC @ 18 V	650 V	+22V, -8V	1890 pF @ 325 V	AEC-Q101	-	D2PAK-7	Automotive	242W (Tc)	-55°C ~ 175°C (TJ)
NTHL019N65S3H MOSFET N-CH 650V 75A TO247-3 onsemi	430	-	询价单	数据表	SuperFET® III	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	-	19.3mOhm @ 37.5A, 10V	Through Hole	4V @ 14.3mA	282 nC @ 10 V	650 V	±30V	15993 pF @ 400 V	-	-	TO-247-3	-	625W (Tc)	-55°C ~ 150°C (TJ)
IXFX420N10T MOSFET N-CH 100V 420A PLUS247-3 Littelfuse Inc.	289	-	询价单	数据表	HiPerFET™, Trench	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	420A (Tc)	10V	2.6mOhm @ 60A, 10V	Through Hole	5V @ 8mA	670 nC @ 10 V	100 V	±20V	47000 pF @ 25 V	-	-	PLUS247™-3	-	1670W (Tc)	-55°C ~ 175°C (TJ)
NTH4L025N065SC1 SILICON CARBIDE (SIC) MOSFET - 1 onsemi	247	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	99A (Tc)	15V, 18V	28.5mOhm @ 45A, 18V	Through Hole	4.3V @ 15.5mA	164 nC @ 18 V	650 V	+22V, -8V	3480 pF @ 15 V	-	-	TO-247-4L	-	348W (Tc)	-55°C ~ 175°C (TJ)
NVBG060N065SC1 SIC MOS D2PAK-7L 650V onsemi	1,580	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	46A (Tc)	15V, 18V	70mOhm @ 20A, 18V	Surface Mount	4.3V @ 6.5mA	74 nC @ 18 V	650 V	-	1473 pF @ 325 V	AEC-Q101	-	D2PAK-7	Automotive	170W (Tc)	-55°C ~ 175°C (TJ)
NTH4LN019N65S3H POWER MOSFET, N-CHANNEL, SUPERFE onsemi	309	-	询价单	数据表	SuperFET® III	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	19.3mOhm @ 37.5A, 10V	Through Hole	4V @ 14.3mA	282 nC @ 10 V	650 V	±30V	15993 pF @ 400 V	-	-	TO-247-4	-	625W (Tc)	-55°C ~ 150°C (TJ)
IXFK200N10P MOSFET N-CH 100V 200A TO264AA Littelfuse Inc.	300	-	询价单	数据表	HiPerFET™, Polar	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200A (Tc)	10V	7.5mOhm @ 100A, 10V	Through Hole	5V @ 8mA	235 nC @ 10 V	100 V	±20V	7600 pF @ 25 V	-	-	TO-264AA (IXFK)	-	830W (Tc)	-55°C ~ 175°C (TJ)
SCT4026DRHRC15 750V, 56A, 4-PIN THD, TRENCH-STR Rohm Semiconductor	460	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	56A (Tc)	18V	34mOhm @ 29A, 18V	Through Hole	4.8V @ 15.4mA	94 nC @ 18 V	750 V	+21V, -4V	2320 pF @ 500 V	AEC-Q101	-	TO-247-4L	Automotive	176W	175°C (TJ)
SCT4026DEHRC11 750V, 56A, 3-PIN THD, TRENCH-STR Rohm Semiconductor	320	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	56A (Tc)	18V	34mOhm @ 29A, 18V	Through Hole	4.8V @ 15.4mA	94 nC @ 18 V	750 V	+21V, -4V	2320 pF @ 500 V	AEC-Q101	-	TO-247N	Automotive	176W	175°C (TJ)
SCT4026DEC11 750V, 26M, 3-PIN THD, TRENCH-STR Rohm Semiconductor	4,887	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	56A (Tc)	18V	34mOhm @ 29A, 18V	Through Hole	4.8V @ 15.4mA	94 nC @ 18 V	750 V	+21V, -4V	2320 pF @ 500 V	-	-	TO-247N	-	176W	175°C (TJ)
SCT2160KEHRC11 1200V, 22A, THD, SILICON-CARBIDE Rohm Semiconductor	374	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	22A (Tc)	18V	208mOhm @ 7A, 18V	Through Hole	4V @ 2.5mA	62 nC @ 18 V	1200 V	+22V, -6V	1200 pF @ 800 V	AEC-Q101	-	TO-247N	Automotive	165W (Tc)	175°C (TJ)
IXTR102N65X2 MOSFET N-CH 650V 54A ISOPLUS247 Littelfuse Inc.	300	-	询价单	数据表	Ultra X2	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	54A (Tc)	10V	33mOhm @ 51A, 10V	Through Hole	5V @ 250µA	152 nC @ 10 V	650 V	±30V	10900 pF @ 25 V	-	-	ISOPLUS247™	-	330W (Tc)	-55°C ~ 150°C (TJ)
SCT4026DW7HRTL 750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	995	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	51A (Tc)	18V	34mOhm @ 29A, 18V	Surface Mount	4.8V @ 15.4mA	94 nC @ 18 V	750 V	+21V, -4V	2320 pF @ 500 V	AEC-Q101	-	TO-263-7L	Automotive	150W	175°C (TJ)
SCT4026DW7TL 750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	988	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	51A (Tj)	18V	34mOhm @ 29A, 18V	Surface Mount	4.8V @ 15.4mA	94 nC @ 18 V	750 V	+21V, -4V	2320 pF @ 500 V	-	-	TO-263-7L	-	150W	175°C (TJ)
IPZA65R018CFD7XKSA1 HIGH POWER_NEW Infineon Technologies	238	-	询价单	数据表	CoolMOS™ CFD7	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	106A (Tc)	10V	18mOhm @ 58.2A, 10V	Through Hole	4.5V @ 2.91mA	234 nC @ 10 V	650 V	±20V	11660 pF @ 400 V	-	-	PG-TO247-4-3	-	446W (Tc)	-55°C ~ 150°C (TJ)
NVHL027N65S3F MOSFET N-CH 650V 75A TO247-3 onsemi	479	-	询价单	数据表	SuperFET® III, FRFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	27.4mOhm @ 35A, 10V	Through Hole	5V @ 3mA	227 nC @ 10 V	650 V	±30V	7780 pF @ 400 V	AEC-Q101	-	TO-247-3	Automotive	595W (Tc)	-55°C ~ 150°C (TJ)
2SJ360(F) MOSFET P-CH 60V 1A PW-MINI Toshiba Semiconductor and Storage	8,434	-	询价单	数据表	-	TO-243AA	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	1A (Ta)	4V, 10V	730mOhm @ 500mA, 10V	Surface Mount	2V @ 1mA	6.5 nC @ 10 V	60 V	±20V	155 pF @ 10 V	-	-	PW-MINI	-	500mW (Ta)	150°C (TJ)
SIR840DP-T1-GE3 MOSFET N-CH 30V PPAK SO-8 Vishay Siliconix	2,443	-	询价单	数据表	-	PowerPAK® SO-8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	-	-	-	Surface Mount	-	-	30 V	-	-	-	-	PowerPAK® SO-8	-	-	-55°C ~ 150°C (TJ)
IRFR9110TRRPBF MOSFET P-CH 100V 3.1A DPAK Vishay Siliconix	8,912	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	3.1A (Tc)	10V	1.2Ohm @ 1.9A, 10V	Surface Mount	4V @ 250µA	8.7 nC @ 10 V	100 V	±20V	200 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
FQPF6N40CT MOSFET N-CH 400V 6A TO220F onsemi	3,232	-	询价单	数据表	QFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	1Ohm @ 3A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	400 V	±30V	625 pF @ 25 V	-	-	TO-220F-3	-	38W (Tc)	-55°C ~ 150°C (TJ)

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