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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM13N50ACI C0G

TSM13N50ACI C0G

MOSFET N-CH 500V 13A ITO220AB

Taiwan Semiconductor Corporation

8,588 -
TSM13N50ACI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 480mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 31 nC @ 10 V 500 V ±30V 1965 pF @ 25 V - - ITO-220AB - 52W (Tc) -55°C ~ 150°C (TJ)
IXFR80N50Q3

IXFR80N50Q3

MOSFET N-CH 500V 50A ISOPLUS247

Littelfuse Inc.

192 -
IXFR80N50Q3

数据表

HiPerFET™, Q3 Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 72mOhm @ 40A, 10V Through Hole 6.5V @ 8mA 200 nC @ 10 V 500 V ±30V 10000 pF @ 25 V - - ISOPLUS247™ - 570W (Tc) -55°C ~ 150°C (TJ)
DI064P04D1

DI064P04D1

MOSFET DPAK P -40V -64A

Diotec Semiconductor

4,276 -
DI064P04D1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 64A (Tc) 10V 7.6mOhm @ 30A, 10V Surface Mount 4V @ 250µA 105 nC @ 10 V 40 V ±20V 7475 pF @ 20 V - - TO-252 (DPAK) - 48.3W (Tc) -55°C ~ 150°C (TJ)
S2M0040120K

S2M0040120K

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

103 -
S2M0040120K

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) - - - Through Hole - - 1200 V - - - - TO-247-4 - - -
NTH4L027N65S3F

NTH4L027N65S3F

MOSFET N-CH 650V 75A TO247-4

onsemi

449 -
NTH4L027N65S3F

数据表

FRFET®, SuperFET® III TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 27.4mOhm @ 35A, 10V Through Hole 5V @ 3mA 259 nC @ 10 V 650 V ±30V 7690 pF @ 400 V - - TO-247-4L - 595W (Tc) -55°C ~ 150°C (TJ)
DMJ70H1D4SV3

DMJ70H1D4SV3

MOSFET N-CHANNEL 700V 5A TO251

Diodes Incorporated

9,613 -
DMJ70H1D4SV3

数据表

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.5Ohm @ 1A, 10V Through Hole 4V @ 250µA 7.5 nC @ 10 V 700 V ±30V 342 pF @ 50 V - - TO-251 (Type TH3) - 78W (Tc) -55°C ~ 150°C (TJ)
NTH027N65S3F-F155

NTH027N65S3F-F155

MOSFET N-CH 650V 75A TO247-3

onsemi

472 -
NTH027N65S3F-F155

数据表

FRFET®, SuperFET® II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 27.4mOhm @ 35A, 10V Through Hole 5V @ 7.5mA 259 nC @ 10 V 650 V ±30V 7690 pF @ 400 V - - TO-247-3 - 595W (Tc) -55°C ~ 150°C (TJ)
IXKR47N60C5

IXKR47N60C5

MOSFET N-CH 600V 47A ISOPLUS247

Littelfuse Inc.

107 -
IXKR47N60C5

数据表

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 45mOhm @ 44A, 10V Through Hole 3.5V @ 3mA 190 nC @ 10 V 600 V ±20V 6800 pF @ 100 V - - ISOPLUS247™ - - -55°C ~ 150°C (TJ)
FDC6392S

FDC6392S

MOSFET P-CH 20V 2.2A SUPERSOT6

onsemi

9,241 -
FDC6392S

数据表

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.2A (Ta) 2.5V, 4.5V 150mOhm @ 2.2A, 4.5V Surface Mount 1.5V @ 250µA 5.2 nC @ 4.5 V 20 V ±12V 369 pF @ 10 V - Schottky Diode (Isolated) SuperSOT™-6 - 960mW (Ta) -55°C ~ 150°C (TJ)
SCT3060ALHRC11

SCT3060ALHRC11

SICFET N-CH 650V 39A TO247N

Rohm Semiconductor

440 -
SCT3060ALHRC11

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 39A (Tc) 18V 78mOhm @ 13A, 18V Through Hole 5.6V @ 6.67mA 58 nC @ 18 V 650 V +22V, -4V 852 pF @ 500 V AEC-Q101 - TO-247N Automotive 165W 175°C (TJ)
IXFB132N50P3

IXFB132N50P3

MOSFET N-CH 500V 132A PLUS264

Littelfuse Inc.

275 -
IXFB132N50P3

数据表

HiPerFET™, Polar3™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 132A (Tc) 10V 39mOhm @ 66A, 10V Through Hole 5V @ 8mA 250 nC @ 10 V 500 V ±30V 18600 pF @ 25 V - - PLUS264™ - 1890W (Tc) -55°C ~ 150°C (TJ)
IXTN200N10T

IXTN200N10T

MOSFET N-CH 100V 200A SOT227B

Littelfuse Inc.

270 -
IXTN200N10T

数据表

Trench SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 5.5mOhm @ 50A, 10V Chassis Mount 4.5V @ 250µA 152 nC @ 10 V 100 V ±20V 9400 pF @ 25 V - - SOT-227B - 550W (Tc) -55°C ~ 175°C (TJ)
STY60NM50

STY60NM50

MOSFET N-CH 500V 60A MAX247

STMicroelectronics

584 -
STY60NM50

数据表

MDmesh™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 50mOhm @ 30A, 10V Through Hole 5V @ 250µA 266 nC @ 10 V 500 V ±30V 7500 pF @ 25 V - - MAX247™ - 560W (Tc) 150°C (TJ)
IXFK32N80Q3

IXFK32N80Q3

MOSFET N-CH 800V 32A TO264AA

IXYS

442 -
IXFK32N80Q3

数据表

HiPerFET™, Q3 Class TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 270mOhm @ 16A, 10V Through Hole 6.5V @ 4mA 140 nC @ 10 V 800 V ±30V 6940 pF @ 25 V - - TO-264AA (IXFK) - 1000W (Tc) -55°C ~ 150°C (TJ)
MSC040SMA120S/TR

MSC040SMA120S/TR

MOSFET SIC 1200 V 40 MOHM TO-268

Microchip Technology

397 -
MSC040SMA120S/TR

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 64A (Tc) 20V 50mOhm @ 40A, 20V Surface Mount 2.6V @ 2mA 137 nC @ 20 V 1200 V +23V, -10V 1990 pF @ 1000 V - - TO-268 - 303W (Tc) -55°C ~ 175°C (TJ)
IXTN32P60P

IXTN32P60P

MOSFET P-CH 600V 32A SOT227B

Littelfuse Inc.

296 -
IXTN32P60P

数据表

PolarP™ SOT-227-4, miniBLOC Tube Active P-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 350mOhm @ 500mA, 10V Chassis Mount 4V @ 1mA 196 nC @ 10 V 600 V ±20V 11100 pF @ 25 V - - SOT-227B - 890W (Tc) -55°C ~ 150°C (TJ)
SCT2080KEHRC11

SCT2080KEHRC11

SICFET N-CH 1200V 40A TO247N

Rohm Semiconductor

16,500 -
SCT2080KEHRC11

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 40A (Tc) 18V 117mOhm @ 10A, 18V Through Hole 4V @ 4.4mA 106 nC @ 18 V 1200 V +22V, -6V 2080 pF @ 800 V AEC-Q101 - TO-247N Automotive - 175°C (TJ)
NVBG025N065SC1

NVBG025N065SC1

SIC MOS D2PAK-7L 650V

onsemi

790 -
NVBG025N065SC1

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 106A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V Surface Mount 4.3V @ 15.5mA 164 nC @ 18 V 650 V - 3480 pF @ 325 V AEC-Q101 - D2PAK-7 Automotive 395W (Tc) -55°C ~ 175°C (TJ)
AIMW120R060M1HXKSA1

AIMW120R060M1HXKSA1

1200V COOLSIC MOSFET PG-TO247-3

Infineon Technologies

220 -
AIMW120R060M1HXKSA1

数据表

CoolSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 36A (Tc) 18V 78mOhm @ 13A, 18V Through Hole 5.7V @ 5.6mA 31 nC @ 18 V 1200 V +23V, -7V 1060 pF @ 800 V AEC-Q101 - PG-TO247-3-41 Automotive 150W (Tc) -55°C ~ 175°C (TJ)
FDN371N

FDN371N

MOSFET N-CH 20V 2.5A SUPERSOT3

onsemi

7,365 -
FDN371N

数据表

PowerTrench® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Ta) 2.5V, 4.5V 50mOhm @ 2.5A, 4.5V Surface Mount 1.5V @ 250µA 10.7 nC @ 4.5 V 20 V ±12V 815 pF @ 10 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
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