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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFK88N30P

IXFK88N30P

MOSFET N-CH 300V 88A TO264AA

Littelfuse Inc.

596 -
IXFK88N30P

数据表

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 88A (Tc) 10V 40mOhm @ 44A, 10V Through Hole 5V @ 4mA 180 nC @ 10 V 300 V ±20V 6300 pF @ 25 V - - TO-264AA (IXFK) - 600W (Tc) -55°C ~ 150°C (TJ)
R6050JNZ4C13

R6050JNZ4C13

MOSFET N-CH 600V 50A TO247G

Rohm Semiconductor

531 -
R6050JNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 15V 83mOhm @ 25A, 15V Through Hole 7V @ 5mA 120 nC @ 15 V 600 V ±30V 4500 pF @ 100 V - - TO-247G - 615W (Tc) 150°C (TJ)
STF6N60DM2

STF6N60DM2

MOSFET N-CH 600V 5A TO220FP

STMicroelectronics

5,090 -
STF6N60DM2

数据表

MDmesh™ DM2 TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.1Ohm @ 2.5A, 10V Through Hole 4.75V @ 250µA 6.2 nC @ 10 V 600 V ±25V 274 pF @ 100 V - - TO-220FP - 20W (Tc) -55°C ~ 150°C (TJ)
NTMFS4852NT3G

NTMFS4852NT3G

MOSFET N-CH 30V 16A/155A 5DFN

onsemi

8,938 -
NTMFS4852NT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta), 155A (Tc) 4.5V, 10V 2.1mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 71.3 nC @ 10 V 30 V ±20V 4970 pF @ 12 V - - 5-DFN (5x6) (8-SOFL) - 900mW (Ta), 86.2W (Tc) -55°C ~ 150°C (TJ)
IXFK32N100X

IXFK32N100X

MOSFET N-CH 1000V 32A TO264

Littelfuse Inc.

215 -
IXFK32N100X

数据表

HiPerFET™, Ultra X TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 220mOhm @ 16A, 10V Through Hole 6V @ 4mA 130 nC @ 10 V 1000 V ±30V 4075 pF @ 25 V - - TO-264 - 890W (Tc) -55°C ~ 150°C (TJ)
IXFH24N90P

IXFH24N90P

MOSFET N-CH 900V 24A TO247AD

Littelfuse Inc.

128 -
IXFH24N90P

数据表

HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 420mOhm @ 12A, 10V Through Hole 6.5V @ 1mA 130 nC @ 10 V 900 V ±30V 7200 pF @ 25 V - - TO-247AD (IXFH) - 660W (Tc) -55°C ~ 150°C (TJ)
SCT3080ALHRC11

SCT3080ALHRC11

SICFET N-CH 650V 30A TO247N

Rohm Semiconductor

448 -
SCT3080ALHRC11

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 30A (Tc) 18V 104mOhm @ 10A, 18V Through Hole 5.6V @ 5mA 48 nC @ 18 V 650 V +22V, -4V 571 pF @ 500 V AEC-Q101 - TO-247N Automotive 134W 175°C (TJ)
IXFH80N65X2-4

IXFH80N65X2-4

MOSFET N-CH 650V 80A TO247-4L

Littelfuse Inc.

120 -
IXFH80N65X2-4

数据表

HiPerFET™, Ultra X2 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 38mOhm @ 500mA, 10V Through Hole 5V @ 4mA 140 nC @ 10 V 650 V ±30V 8300 pF @ 25 V - - TO-247-4L - 890W (Tc) -55°C ~ 150°C (TJ)
STWA75N60DM6

STWA75N60DM6

MOSFET N-CH 600V 72A TO247

STMicroelectronics

361 -
STWA75N60DM6

数据表

MDmesh™ DM6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 72A (Tc) - - Through Hole - - 600 V ±25V - - - TO-247 Long Leads - - -
R6077VNZ4C13

R6077VNZ4C13

600V 77A TO-247, PRESTOMOS WITH

Rohm Semiconductor

1,148 -
R6077VNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 77A (Tc) 10V, 15V 51mOhm @ 23A, 15V Through Hole 6.5V @ 1.9mA 108 nC @ 10 V 600 V ±30V 5200 pF @ 100 V - - TO-247 - 781W (Tc) 150°C (TJ)
STFW69N65M5

STFW69N65M5

MOSFET N-CH 650V 58A ISOWATT

STMicroelectronics

145 -
STFW69N65M5

数据表

MDmesh™ V TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 10V 45mOhm @ 29A, 10V Through Hole 5V @ 250µA 143 nC @ 10 V 650 V ±25V 6420 pF @ 100 V - - TO-3PF - 79W (Tc) 150°C (TJ)
SIHU2N80E-GE3

SIHU2N80E-GE3

MOSFET N-CH 800V 2.8A IPAK

Vishay Siliconix

3,417 -
SIHU2N80E-GE3

数据表

E TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 2.75Ohm @ 1A, 10V Through Hole 4V @ 250µA 19.6 nC @ 10 V 800 V ±30V 315 pF @ 100 V - - TO-251AA - 62.5W (Tc) -55°C ~ 150°C (TJ)
MCPF18N20A-BP

MCPF18N20A-BP

MOSFET N-CHANNEL MOSFET

Micro Commercial Co

4,275 -
MCPF18N20A-BP

数据表

- - Bulk Active - - - - - - - - - - - - - - - - -
FDS7066ASN3

FDS7066ASN3

MOSFET N-CH 30V 19A 8SO

onsemi

9,122 -
FDS7066ASN3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta) 4.5V, 10V 4.8mOhm @ 19A, 10V Surface Mount 3V @ 1mA 62 nC @ 10 V 30 V ±20V 2460 pF @ 15 V - - 8-SO FLMP - 3W (Ta) -55°C ~ 150°C (TJ)
MCU25P06-TP

MCU25P06-TP

Interface

Micro Commercial Co

6,787 -
MCU25P06-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 45mOhm @ 20A, 10V Surface Mount 3.5V @ 250µA 46 nC @ 10 V 60 V ±20V 3430 pF @ 30 V - - TO-252 (DPAK) - 90W -55°C ~ 150°C (TJ)
SIHF5N50D-E3

SIHF5N50D-E3

MOSFET N-CH 500V 5.3A TO220

Vishay Siliconix

4,570 -
SIHF5N50D-E3

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 1.5Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 500 V ±30V 325 pF @ 100 V - - TO-220 Full Pack - 30W (Tc) -55°C ~ 150°C (TJ)
GT080N10KI

GT080N10KI

N100V,65A,RD<8M@10V,VTH1.0V~2.5V

Goford Semiconductor

8,490 -
GT080N10KI

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Obsolete N-Channel MOSFET (Metal Oxide) 65A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 35 nC @ 10 V 100 V ±20V 2394 pF @ 50 V - - TO-252 - 79W (Tc) -55°C ~ 150°C (TJ)
STD60NF3LLT4

STD60NF3LLT4

MOSFET N-CH 30V 60A DPAK

STMicroelectronics

2,742 -
STD60NF3LLT4

数据表

STripFET™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 9.5mOhm @ 30A, 10V Surface Mount 1V @ 250µA 40 nC @ 4.5 V 30 V ±16V 2210 pF @ 25 V - - DPAK - 100W (Tc) -55°C ~ 175°C (TJ)
BUZ73AL

BUZ73AL

MOSFET N-CH 200V 5.5A TO220-3

Infineon Technologies

2,238 -
BUZ73AL

数据表

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 5V 600mOhm @ 3.5A, 5V Through Hole 2V @ 1mA - 200 V ±20V 840 pF @ 25 V - - PG-TO220-3 - 40W (Tc) -55°C ~ 150°C (TJ)
NTD20P06LG

NTD20P06LG

MOSFET P-CH 60V 15.5A DPAK

onsemi

8,963 -
NTD20P06LG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete P-Channel MOSFET (Metal Oxide) 15.5A (Ta) 5V 150mOhm @ 7.5A, 5V Surface Mount 2V @ 250µA 26 nC @ 5 V 60 V ±20V 1190 pF @ 25 V - - DPAK - 65W (Tc) -55°C ~ 175°C (TJ)
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