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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPD60R180P7SE8228AUMA1

IPD60R180P7SE8228AUMA1

MOSFET N-CH 600V 18A TO252-3

Infineon Technologies

4,103 -
IPD60R180P7SE8228AUMA1

数据表

CoolMOS™ P7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 180mOhm @ 5.6A, 10V Surface Mount 4V @ 280µA 25 nC @ 10 V 600 V ±20V 1081 pF @ 400 V - - PG-TO252-3 - 72W (Tc) -40°C ~ 150°C (TJ)
ZVN4306AVSTZ

ZVN4306AVSTZ

MOSFET N-CH 60V 1.1A E-LINE

Diodes Incorporated

7,628 -
ZVN4306AVSTZ

数据表

- E-Line-3 Tape & Box (TB) Obsolete N-Channel MOSFET (Metal Oxide) 1.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V Through Hole 3V @ 1mA - 60 V ±20V 350 pF @ 25 V - - E-Line (TO-92 compatible) - 850mW (Ta) -55°C ~ 150°C (TJ)
PSMN022-30PL,127

PSMN022-30PL,127

MOSFET N-CH 30V 30A TO220AB

Nexperia USA Inc.

7,829 -
PSMN022-30PL,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 22mOhm @ 5A, 10V Through Hole 2.15V @ 1mA 9 nC @ 10 V 30 V ±20V 447 pF @ 15 V - - TO-220AB - 41W (Tc) -55°C ~ 175°C (TJ)
AOTF11N60L

AOTF11N60L

MOSFET N-CH 600V 11A TO220-3F

Alpha & Omega Semiconductor Inc.

6,264 -
AOTF11N60L

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 650mOhm @ 5.5A, 10V Through Hole 4.5V @ 250µA 37 nC @ 10 V 600 V ±30V 1990 pF @ 25 V - - TO-220F - 37.9W (Tc) -55°C ~ 150°C (TJ)
AOTF256L

AOTF256L

MOSFET N-CH 150V 3A/12A TO220-3F

Alpha & Omega Semiconductor Inc.

5,831 -
AOTF256L

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 3A (Ta), 12A (Tc) 4.5V, 10V 85mOhm @ 10A, 10V Through Hole 2.8V @ 250µA 22 nC @ 10 V 150 V ±20V 1165 pF @ 75 V - - TO-220F - 2.1W (Ta), 33W (Tc) -55°C ~ 175°C (TJ)
STD30PF03LT4

STD30PF03LT4

MOSFET P-CH 30V 24A DPAK

STMicroelectronics

8,363 -
STD30PF03LT4

数据表

STripFET™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 24A (Tc) 5V, 10V 28mOhm @ 12A, 10V Surface Mount 1V @ 250µA 28 nC @ 5 V 30 V ±16V 1670 pF @ 25 V - - DPAK - 70W (Tc) 175°C (TJ)
STWA40N90K5

STWA40N90K5

MOSFET N-CH 900V 40A TO247

STMicroelectronics

596 -
STWA40N90K5

数据表

MDmesh™ K5 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 99mOhm @ 20A, 10V Through Hole 5V @ 100µA 89 nC @ 10 V 900 V ±30V 3260 pF @ 100 V - - TO-247 Long Leads - 446W (Tc) -55°C ~ 150°C (TJ)
TSM340N06CP

TSM340N06CP

60V, 25A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

6,323 -
TSM340N06CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 34mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 16.6 nC @ 10 V 60 V ±20V 1180 pF @ 30 V - - TO-252 (DPAK) - 40W (Tc) 150°C (TJ)
SCT4045DEC11

SCT4045DEC11

750V, 45M, 3-PIN THD, TRENCH-STR

Rohm Semiconductor

4,201 -
SCT4045DEC11

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 34A (Tc) 18V 59mOhm @ 17A, 18V Through Hole 4.8V @ 8.89mA 63 nC @ 18 V 750 V +21V, -4V 14600 pF @ 500 V - - TO-247N - 115W 175°C (TJ)
IRFR120TRRPBF

IRFR120TRRPBF

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix

4,528 -
IRFR120TRRPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.7A (Tc) 10V 270mOhm @ 4.6A, 10V Surface Mount 4V @ 250µA 16 nC @ 10 V 100 V ±20V 360 pF @ 25 V - - DPAK - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
R6076ENZ4C13

R6076ENZ4C13

MOSFET N-CH 600V 76A TO247

Rohm Semiconductor

463 -
R6076ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 76A (Tc) 10V 42mOhm @ 44.4A, 10V Through Hole 4V @ 1mA 260 nC @ 10 V 600 V ±20V 6500 pF @ 25 V - - TO-247 - 735W (Tc) 150°C (TJ)
IXTX120N65X2

IXTX120N65X2

MOSFET N-CH 650V 120A PLUS247-3

Littelfuse Inc.

282 -
IXTX120N65X2

数据表

Ultra X2 TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 24mOhm @ 60A, 10V Through Hole 4.5V @ 8mA 240 nC @ 10 V 650 V ±30V 13600 pF @ 25 V - - PLUS247™-3 - 1250W (Tc) -55°C ~ 150°C (TJ)
IPAW60R360P7SE8228XKSA1

IPAW60R360P7SE8228XKSA1

MOSFET N-CH 600V 9A TO220

Infineon Technologies

9,672 -
IPAW60R360P7SE8228XKSA1

数据表

CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 360mOhm @ 2.7A, 10V Through Hole 4V @ 140µA 13 nC @ 10 V 600 V ±20V 555 pF @ 400 V - - PG-TO220-FP - 22W (Tc) -40°C ~ 150°C (TJ)
PJD60R540E_L2_00001

PJD60R540E_L2_00001

600V N-CHANNEL SUPER JUNCTION MO

Panjit International Inc.

8,777 -
PJD60R540E_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 1.3A (Ta), 9A (Tc) 10V 535mOhm @ 2.8A, 10V Surface Mount 4V @ 250µA 23.7 nC @ 10 V 600 V ±20V 531 pF @ 25 V - - TO-252AA - 94W (Tc) -55°C ~ 150°C (TJ)
IPD06P003NATMA1

IPD06P003NATMA1

MOSFET P-CH 60V 22A TO252-3

Infineon Technologies

4,870 -
IPD06P003NATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 65mOhm @ 22A, 10V Surface Mount 4V @ 1.04mA 39 nC @ 10 V 60 V ±20V 1600 pF @ 30 V - - PG-TO252-3 - 83W (Tc) -55°C ~ 175°C (TJ)
SQD45P03-12-T4_GE3

SQD45P03-12-T4_GE3

MOSFET P-CH 30V 50A TO252AA

Vishay Siliconix

4,017 -
SQD45P03-12-T4_GE3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 83 nC @ 10 V 30 V ±20V 3495 pF @ 15 V AEC-Q101 - TO-252AA Automotive 71W (Tc) -55°C ~ 175°C (TJ)
IXKH70N60C5

IXKH70N60C5

MOSFET N-CH 600V 70A TO247AD

Littelfuse Inc.

284 -
IXKH70N60C5

数据表

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 45mOhm @ 44A, 10V Through Hole 3.5V @ 3mA 190 nC @ 10 V 600 V ±20V 6800 pF @ 100 V - - TO-247AD - - -55°C ~ 150°C (TJ)
IXFH70N65X3

IXFH70N65X3

MOSFET 70A 650V X3 TO247

Littelfuse Inc.

300 -
IXFH70N65X3

数据表

HiPerFET™, Ultra X3 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 44mOhm @ 35A, 10V Through Hole 5.2V @ 4mA 66 nC @ 10 V 650 V ±20V 4600 pF @ 25 V - - TO-247 (IXFH) - 780W (Tc) -55°C ~ 150°C (TJ)
IXTT12N150

IXTT12N150

MOSFET N-CH 1500V 12A TO268

Littelfuse Inc.

213 -
IXTT12N150

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 2Ohm @ 6A, 10V Surface Mount 4.5V @ 250µA 106 nC @ 10 V 1500 V ±30V 3720 pF @ 25 V - - TO-268AA - 890W (Tc) -55°C ~ 150°C (TJ)
IXTH04N300P3HV

IXTH04N300P3HV

MOSFET N-CH 3000V 400MA TO247HV

Littelfuse Inc.

120 -
IXTH04N300P3HV

数据表

Polar P3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 400mA (Tc) 10V 190Ohm @ 200mA, 10V Through Hole 4V @ 250µA 13 nC @ 10 V 3000 V ±20V 283 pF @ 25 V - - TO-247HV - 104W (Tc) -55°C ~ 150°C (TJ)
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