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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SPP10N10L

SPP10N10L

MOSFET N-CH 100V 10.3A TO220-3

Infineon Technologies

6,435 -
SPP10N10L

数据表

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10.3A (Tc) 4.5V, 10V 154mOhm @ 8.1A, 10V Through Hole 2V @ 21µA 22 nC @ 10 V 100 V ±20V 444 pF @ 25 V - - PG-TO220-3-1 - 50W (Tc) -55°C ~ 175°C (TJ)
IXFR24N100Q3

IXFR24N100Q3

MOSFET N-CH 1000V 18A ISOPLUS247

Littelfuse Inc.

337 -
IXFR24N100Q3

数据表

HiPerFET™, Q3 Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 490mOhm @ 12A, 10V Through Hole 6.5V @ 4mA 140 nC @ 10 V 1000 V ±30V 7200 pF @ 25 V - - ISOPLUS247™ - 500W (Tc) -55°C ~ 150°C (TJ)
C3M0075120D-A

C3M0075120D-A

75M 1200V 175C SIC FET

Wolfspeed, Inc.

379 -
C3M0075120D-A

数据表

C3M™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 32A (Tc) 15V 90mOhm @ 20A, 15V Through Hole 3.6V @ 5mA 54 nC @ 15 V 1200 V +15V, -4V 1390 pF @ 1000 V - - TO-247-3 - 136W (Tc) -40°C ~ 175°C (TJ)
IXFL100N50P

IXFL100N50P

MOSFET N-CH 500V 70A ISOPLUS264

Littelfuse Inc.

225 -
IXFL100N50P

数据表

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 52mOhm @ 50A, 10V Through Hole 5V @ 8mA 240 nC @ 10 V 500 V ±30V 20000 pF @ 25 V - - ISOPLUS264™ - 625W (Tc) -55°C ~ 150°C (TJ)
SCTWA50N120

SCTWA50N120

SICFET N-CH 1200V 65A HIP247

STMicroelectronics

378 -
SCTWA50N120

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 65A (Tc) 20V 69mOhm @ 40A, 20V Through Hole 3V @ 1mA 122 nC @ 20 V 1200 V +25V, -10V 1900 pF @ 400 V - - HiP247™ - 318W (Tc) -55°C ~ 200°C (TJ)
STY100NM60N

STY100NM60N

MOSFET N CH 600V 98A MAX247

STMicroelectronics

600 -
STY100NM60N

数据表

MDmesh™ II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 98A (Tc) 10V 29mOhm @ 49A, 10V Through Hole 4V @ 250µA 330 nC @ 10 V 600 V 25V 9600 pF @ 50 V - - MAX247™ - 625W (Tc) -55°C ~ 150°C (TJ)
IXFX44N80P

IXFX44N80P

MOSFET N-CH 800V 44A PLUS247-3

Littelfuse Inc.

300 -
IXFX44N80P

数据表

HiPerFET™, Polar TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 190mOhm @ 22A, 10V Through Hole 5V @ 8mA 198 nC @ 10 V 800 V ±30V 12000 pF @ 25 V - - PLUS247™-3 - 1040W (Tc) -55°C ~ 150°C (TJ)
IXFK32N100P

IXFK32N100P

MOSFET N-CH 1000V 32A TO264AA

Littelfuse Inc.

300 -
IXFK32N100P

数据表

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 320mOhm @ 16A, 10V Through Hole 6.5V @ 1mA 225 nC @ 10 V 1000 V ±30V 14200 pF @ 25 V - - TO-264AA (IXFK) - 960W (Tc) -55°C ~ 150°C (TJ)
IXFB110N60P3

IXFB110N60P3

MOSFET N-CH 600V 110A PLUS264

Littelfuse Inc.

118 -
IXFB110N60P3

数据表

HiPerFET™, Polar3™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 56mOhm @ 55A, 10V Through Hole 5V @ 8mA 245 nC @ 10 V 600 V ±30V 18000 pF @ 25 V - - PLUS264™ - 1890W (Tc) -55°C ~ 150°C (TJ)
IPU95R1K2P7AKMA1

IPU95R1K2P7AKMA1

MOSFET N-CH 950V 6A TO251-3

Infineon Technologies

3,229 -
IPU95R1K2P7AKMA1

数据表

CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1.2Ohm @ 2.7A, 10V Through Hole 3.5V @ 140µA 15 nC @ 10 V 950 V ±20V 478 pF @ 400 V - - PG-TO251-3 - 52W (Tc) -55°C ~ 150°C (TJ)
IPU80R750P7AKMA1

IPU80R750P7AKMA1

MOSFET N-CH 800V 7A TO251-3

Infineon Technologies

2,838 -
IPU80R750P7AKMA1

数据表

CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 750mOhm @ 2.7A, 10V Through Hole 3.5V @ 140µA 17 nC @ 10 V 800 V ±20V 460 pF @ 500 V - - PG-TO251-3 - 51W (Tc) -55°C ~ 150°C (TJ)
AON6224A

AON6224A

N

Alpha & Omega Semiconductor Inc.

2,503 -
AON6224A

数据表

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 16A (Ta), 34A (Tc) 4.5V, 10V 11.6mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 50 nC @ 10 V 100 V ±20V 2305 pF @ 50 V - - 8-DFN (5x6) - 16W (Ta), 56.5W (Tc) -55°C ~ 150°C (TJ)
STD5N65M6

STD5N65M6

MOSFET N-CH 650V DPAK

STMicroelectronics

2,002 -
STD5N65M6

数据表

MDmesh™ M6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 0V, 10V 1.3Ohm @ 2A, 10V Surface Mount 3.75V @ 250µA 5.1 nC @ 10 V 650 V ±25V 170 pF @ 100 V - - DPAK - 45W (Tc) -55°C ~ 150°C (TJ)
STU5N65M6

STU5N65M6

MOSFET N-CH 650V 4A IPAK

STMicroelectronics

8,501 -
STU5N65M6

数据表

MDmesh™ M6 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.3Ohm @ 2A, 10V Through Hole 3.75V @ 250µA 5.1 nC @ 10 V 650 V ±25V 170 pF @ 100 V - - TO-251 (IPAK) - 45W (Tc) -55°C ~ 150°C (TJ)
PJF4NA90_T0_00001

PJF4NA90_T0_00001

900V N-CHANNEL MOSFET

Panjit International Inc.

2,499 -
PJF4NA90_T0_00001

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 3.4Ohm @ 2A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 900 V ±30V 710 pF @ 25 V - - ITO-220AB-F - 44W (Tc) -55°C ~ 150°C (TJ)
IPAN70R450P7SXKSA1

IPAN70R450P7SXKSA1

MOSFET N-CH 700V 10A TO220

Infineon Technologies

8,995 -
IPAN70R450P7SXKSA1

数据表

CoolMOS™ P7 TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 450mOhm @ 2.3A, 10V Through Hole 3.5V @ 120µA 13.1 nC @ 10 V 700 V ±16V 424 pF @ 400 V - - PG-TO220-FP - 22.7W (Tc) -40°C ~ 150°C (TJ)
IRF9Z24NLPBF

IRF9Z24NLPBF

MOSFET P-CH 55V 12A TO262

Infineon Technologies

3,476 -
IRF9Z24NLPBF

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 175mOhm @ 7.2A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 55 V ±20V 350 pF @ 25 V - - TO-262 - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ)
RSD131P10TL

RSD131P10TL

MOSFET P-CH 100V 13A CPT3

Rohm Semiconductor

4,397 -
RSD131P10TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 13A (Tc) 4V, 10V 200mOhm @ 6.5A, 10V Surface Mount 2.5V @ 1mA 40 nC @ 10 V 100 V ±20V 2400 pF @ 25 V - - CPT3 - 850mW (Ta), 20W (Tc) 150°C (TJ)
IPP084N06L3GHKSA1

IPP084N06L3GHKSA1

MOSFET N-CH 60V 50A TO220-3

Infineon Technologies

9,556 -
IPP084N06L3GHKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 8.4mOhm @ 50A, 10V Through Hole 2.2V @ 34µA 29 nC @ 4.5 V 60 V ±20V 4900 pF @ 30 V - - PG-TO220-3 - 79W (Tc) -55°C ~ 175°C (TJ)
S2M0040120D

S2M0040120D

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

221 -
S2M0040120D

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) - - - Through Hole - - 1200 V - - - - TO-247-3 - - -
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