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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6020JNXC7G

R6020JNXC7G

MOSFET N-CH 600V 20A TO220FM

Rohm Semiconductor

1,930 -
R6020JNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 15V 234mOhm @ 10A, 15V Through Hole 7V @ 3.5mA 45 nC @ 15 V 600 V ±30V 1500 pF @ 100 V - - TO-220FM - 76W (Tc) -55°C ~ 150°C (TJ)
IRLR3717TRLPBF

IRLR3717TRLPBF

MOSFET N-CH 20V 120A DPAK

Infineon Technologies

3,979 -
IRLR3717TRLPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 4mOhm @ 15A, 10V Surface Mount 2.45V @ 250µA 31 nC @ 4.5 V 20 V ±20V 2830 pF @ 10 V - - TO-252AA (DPAK) - 89W (Tc) -55°C ~ 175°C (TJ)
CMS66N06V8-HF

CMS66N06V8-HF

MOSFET N-CH 60V 66A PDFN3X3-8L

Comchip Technology

3,476 -
CMS66N06V8-HF

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 66A (Tc) 4.5V, 10V 6.5mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 17.8 nC @ 10 V 60 V ±20V 1625 pF @ 30 V - - 8-PDFN (3x3) - 52W (Tc) -55°C ~ 150°C (TJ)
DMP4016SK3Q-13

DMP4016SK3Q-13

MOSFET BVDSS: 31V~40V TO252 T&R

Diodes Incorporated

3,446 -
DMP4016SK3Q-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 11mOhm @ 9.8A, 10V Surface Mount 2.5V @ 250µA 112 nC @ 10 V 40 V ±20V 5697 pF @ 20 V AEC-Q101 - TO-252 (DPAK) Automotive 4W (Ta), 113W (Tc) -55°C ~ 150°C (TJ)
DMPH4016SK3Q-13

DMPH4016SK3Q-13

MOSFET BVDSS: 31V~40V TO252 T&R

Diodes Incorporated

4,802 -
DMPH4016SK3Q-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 11mOhm @ 9.8A, 10V Surface Mount 2.5V @ 250µA 112 nC @ 10 V 40 V ±20V 5697 pF @ 20 V AEC-Q101 - TO-252 (DPAK) Automotive 4.9W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
STP36NF06

STP36NF06

MOSFET N-CH 60V 30A TO220AB

STMicroelectronics

3,672 -
STP36NF06

数据表

STripFET™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 40mOhm @ 15A, 10V Through Hole 4V @ 250µA 31 nC @ 10 V 60 V ±20V 690 pF @ 25 V - - TO-220 - 70W (Tc) -55°C ~ 175°C (TJ)
PJP8NA65A_T0_00001

PJP8NA65A_T0_00001

650V N-CHANNEL MOSFET

Panjit International Inc.

9,956 -
PJP8NA65A_T0_00001

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 7.5A (Ta) 10V 1.2Ohm @ 3.75A, 10V Through Hole 4V @ 250µA 29 nC @ 10 V 650 V ±30V 1245 pF @ 25 V - - TO-220AB - 145W (Tc) -55°C ~ 150°C (TJ)
RCD040N25TL

RCD040N25TL

MOSFET N-CH 250V 4A CPT3

Rohm Semiconductor

4,765 -
RCD040N25TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V - Surface Mount - - 250 V ±30V - - - CPT3 - 20W (Tc) 150°C (TJ)
IPD60R460CEAUMA1

IPD60R460CEAUMA1

CONSUMER

Infineon Technologies

7,956 -
IPD60R460CEAUMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13.1A (Tj) 10V 460mOhm @ 3.4A, 10V Surface Mount 3.5V @ 280µA 28 nC @ 10 V 600 V ±20V 620 pF @ 100 V - - PG-TO252-3-344 - 74W -40°C ~ 150°C (TJ)
DMTH43M7LFG-7

DMTH43M7LFG-7

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

7,486 -
DMTH43M7LFG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 5V, 10V 3mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 30 nC @ 10 V 40 V ±20V 2182 pF @ 20 V - - POWERDI3333-8 - 3.5W (Ta), 65.2W (Tc) -55°C ~ 175°C (TJ)
HUFA76419D3

HUFA76419D3

MOSFET N-CH 60V 20A IPAK

onsemi

3,562 -
HUFA76419D3

数据表

UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 37mOhm @ 20A, 10V Through Hole 3V @ 250µA 27.5 nC @ 10 V 60 V ±16V 900 pF @ 25 V - - IPAK - 75W (Tc) -55°C ~ 175°C (TJ)
HUFA76419D3S

HUFA76419D3S

MOSFET N-CH 60V 20A TO252AA

onsemi

9,351 -
HUFA76419D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 37mOhm @ 20A, 10V Surface Mount 3V @ 250µA 27.5 nC @ 10 V 60 V ±16V 900 pF @ 25 V - - TO-252AA - 75W (Tc) -55°C ~ 175°C (TJ)
RHU003N03T106

RHU003N03T106

MOSFET N-CH 30V 300MA UMT3

Rohm Semiconductor

2,073 -
RHU003N03T106

数据表

- SC-70, SOT-323 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 300mA (Ta) 4V, 10V 1.2Ohm @ 300mA, 10V Surface Mount - - 30 V ±20V 20 pF @ 10 V - - UMT3 - 200mW (Ta) -
DMN3052L-7

DMN3052L-7

MOSFET N-CH 30V 5.4A SOT23-3

Diodes Incorporated

4,309 -
DMN3052L-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.4A (Ta) 2V, 10V 32mOhm @ 5.8A, 10V Surface Mount 1.2V @ 250µA - 30 V ±12V 555 pF @ 5 V - - SOT-23-3 - 1.4W (Ta) -55°C ~ 150°C (TJ)
SI1073X-T1-GE3

SI1073X-T1-GE3

MOSFET P-CH 30V 0.98A SC89-6

Vishay Siliconix

5,329 -
SI1073X-T1-GE3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 980mA (Ta) 4.5V, 10V 173mOhm @ 980mA, 10V Surface Mount 3V @ 250µA 9.45 nC @ 10 V 30 V ±20V 265 pF @ 15 V - - SC-89 (SOT-563F) - 236mW (Ta) -55°C ~ 150°C (TJ)
BSS205NL6327HTSA1

BSS205NL6327HTSA1

MOSFET N-CH 20V 2.5A SOT23-3

Infineon Technologies

3,719 -
BSS205NL6327HTSA1

数据表

OptiMOS™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Ta) 2.5V, 4.5V 50mOhm @ 2.5A, 4.5V Surface Mount 1.2V @ 11µA 3.2 nC @ 4.5 V 20 V ±12V 419 pF @ 10 V - - PG-SOT23 - 500mW (Ta) -55°C ~ 150°C (TJ)
SSM3J129TU(TE85L)

SSM3J129TU(TE85L)

MOSFET P-CH 20V 4.6A UFM

Toshiba Semiconductor and Storage

8,608 -
SSM3J129TU(TE85L)

数据表

U-MOSV 3-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.6A (Ta) 1.5V, 4.5V 46mOhm @ 3A, 4.5V Surface Mount 1V @ 1mA 8.1 nC @ 4.5 V 20 V ±8V 640 pF @ 10 V - - UFM - 500mW (Ta) 150°C (TJ)
SSM3J321T(TE85L,F)

SSM3J321T(TE85L,F)

MOSFET P-CH 20V 5.2A TSM

Toshiba Semiconductor and Storage

5,882 -
SSM3J321T(TE85L,F)

数据表

U-MOSV TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.2A (Ta) 1.5V, 4.5V 46mOhm @ 3A, 4.5V Surface Mount 1V @ 1mA 8.1 nC @ 4.5 V 20 V ±8V 640 pF @ 10 V - - TSM - 700mW (Ta) 150°C (TJ)
NTD4960NT4G

NTD4960NT4G

MOSFET N-CH 30V 8.9A/55A DPAK

onsemi

9,586 -
NTD4960NT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.9A (Ta), 55A (Tc) 4.5V, 10V 8mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 22 nC @ 10 V 30 V ±20V 1300 pF @ 15 V - - DPAK - 1.07W (Ta), 35.71W (Tc) -55°C ~ 175°C (TJ)
SI1422DH-T1-GE3

SI1422DH-T1-GE3

MOSFET N-CH 12V 4A SC70-6

Vishay Siliconix

4,284 -
SI1422DH-T1-GE3

数据表

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 1.8V, 4.5V 26mOhm @ 5.1A, 4.5V Surface Mount 1V @ 250µA 20 nC @ 8 V 12 V ±8V 725 pF @ 6 V - - SC-70-6 - 1.56W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ)
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