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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRLR8729TRPBF

IRLR8729TRPBF

MOSFET N-CH 30V 58A DPAK

Infineon Technologies

8,883 -
IRLR8729TRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V Surface Mount 2.35V @ 25µA 16 nC @ 4.5 V 30 V ±20V 1350 pF @ 15 V - - TO-252AA (DPAK) - 55W (Tc) -55°C ~ 175°C (TJ)
SI4666DY-T1-GE3

SI4666DY-T1-GE3

MOSFET N-CH 25V 16.5A 8SO

Vishay Siliconix

2,584 -
SI4666DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16.5A (Tc) 2.5V, 10V 10mOhm @ 10A, 10V Surface Mount 1.5V @ 250µA 34 nC @ 10 V 25 V ±12V 1145 pF @ 10 V - - 8-SOIC - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ)
SI2305ADS-T1-E3

SI2305ADS-T1-E3

MOSFET P-CH 8V 5.4A SOT23-3

Vishay Siliconix

8,273 -
SI2305ADS-T1-E3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.4A (Tc) 1.8V, 4.5V 40mOhm @ 4.1A, 4.5V Surface Mount 800mV @ 250µA 15 nC @ 4.5 V 8 V ±8V 740 pF @ 4 V - - SOT-23-3 (TO-236) - 960mW (Ta), 1.7W (Tc) -50°C ~ 150°C (TJ)
SI4172DY-T1-GE3

SI4172DY-T1-GE3

MOSFET N-CH 30V 15A 8SO

Vishay Siliconix

7,613 -
SI4172DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 12mOhm @ 11A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 10 V 30 V ±20V 820 pF @ 15 V - - 8-SOIC - 2.5W (Ta), 4.5W (Tc) -55°C ~ 150°C (TJ)
AON6428

AON6428

MOSFET N-CH 30V 11A/43A 8DFN

Alpha & Omega Semiconductor Inc.

3,245 -
AON6428

数据表

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta), 43A (Tc) 4.5V, 10V 10mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 17.8 nC @ 10 V 30 V ±20V 770 pF @ 15 V - - 8-DFN (5x6) - 2W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
SIA448DJ-T1-GE3

SIA448DJ-T1-GE3

MOSFET N-CH 20V 12A PPAK SC70-6

Vishay Siliconix

7,387 -
SIA448DJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 1.5V, 4.5V 15mOhm @ 12.4A, 4.5V Surface Mount 1V @ 250µA 35 nC @ 8 V 20 V ±8V 1380 pF @ 1 V - - PowerPAK® SC-70-6 - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ)
PMPB23XNE,115

PMPB23XNE,115

MOSFET N-CH 20V 7A DFN2020MD-6

Nexperia USA Inc.

9,202 -
PMPB23XNE,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Ta) 1.8V, 4.5V 22mOhm @ 7A, 4.5V Surface Mount 900mV @ 250µA 17 nC @ 4.5 V 20 V ±12V 1136 pF @ 10 V - - DFN2020MD-6 - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
BSL302SNH6327XTSA1

BSL302SNH6327XTSA1

MOSFET N-CH 30V 7.1A TSOP-6

Infineon Technologies

5,850 -
BSL302SNH6327XTSA1

数据表

OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.1A (Ta) 4.5V, 10V 25mOhm @ 7.1A, 10V Surface Mount 2V @ 30µA 6.6 nC @ 5 V 30 V ±20V 750 pF @ 15 V - - PG-TSOP6-6 - 2W (Ta) -55°C ~ 150°C (TJ)
NVC3S5A51PLZT1G

NVC3S5A51PLZT1G

MOSFET P-CH 60V 1.8A 3CPH

onsemi

7,644 -
NVC3S5A51PLZT1G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.8A (Ta) 4V, 10V 250mOhm @ 1A, 10V Surface Mount 2.6V @ 1mA 6 nC @ 10 V 60 V ±20V 262 pF @ 20 V AEC-Q101 - 3-CPH Automotive 1.2W (Ta) -55°C ~ 175°C (TJ)
PMCM950ENEZ

PMCM950ENEZ

MOSFET N-CH 60V 4.8A 9WLCSP

Nexperia USA Inc.

2,672 -
PMCM950ENEZ

数据表

- 9-XFBGA, WLCSP Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.8A (Ta) 4.5V, 10V 41mOhm @ 3A, 10V Surface Mount 1.5V @ 250µA 45 nC @ 10 V 60 V ±20V 1160 pF @ 30 V - - 9-WLCSP (1.48x1.48) - 780mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
PJL9404_R2_00001

PJL9404_R2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,428 -
PJL9404_R2_00001

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 28mOhm @ 6A, 10V Surface Mount 2.1V @ 250µA 7.8 nC @ 10 V 30 V ±20V 343 pF @ 15 V - - 8-SOP - 1.7W (Ta) -55°C ~ 150°C (TJ)
ZXMN6A25GTA

ZXMN6A25GTA

MOSFET N-CH 60V 4.8A SOT223

UMW

4,123 -
ZXMN6A25GTA

数据表

* - Active - - - - - - - - - - - - - - - - -
NDT3055L

NDT3055L

MOSFET N-CH 60V 4A SOT223

UMW

5,333 -
NDT3055L

数据表

* - Active - - - - - - - - - - - - - - - - -
FQD19N10LTM

FQD19N10LTM

MOSFET N-CH 100V 15.6A DPAK

UMW

4,296 -
FQD19N10LTM

数据表

* - Active - - - - - - - - - - - - - - - - -
SIHK045N60EF-T1GE3

SIHK045N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

1,998 -
SIHK045N60EF-T1GE3

数据表

EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 52mOhm @ 17A, 10V Surface Mount 5V @ 250µA 105 nC @ 10 V 600 V ±30V 4685 pF @ 100 V - - PowerPAK®10 x 12 - 278W (Tc) -55°C ~ 150°C (TJ)
FDS6690A

FDS6690A

MOSFET N-CH 30V 11A 8SOIC

UMW

3,480 -
FDS6690A

数据表

* - Active - - - - - - - - - - - - - - - - -
STB32N65M5

STB32N65M5

MOSFET N-CH 650V 24A D2PAK

STMicroelectronics

940 -
STB32N65M5

数据表

MDmesh™ V TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 119mOhm @ 12A, 10V Surface Mount 5V @ 250µA 72 nC @ 10 V 650 V ±25V 3320 pF @ 100 V - - D2PAK - 150W (Tc) 150°C (TJ)
ZVN0545ASTOB

ZVN0545ASTOB

MOSFET N-CH 450V 90MA E-LINE

Diodes Incorporated

2,514 -
ZVN0545ASTOB

数据表

- E-Line-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 90mA (Ta) 10V 50Ohm @ 100mA, 10V Through Hole 3V @ 1mA - 450 V ±20V 70 pF @ 25 V - - E-Line (TO-92 compatible) - 700mW (Ta) -55°C ~ 150°C (TJ)
IPZA60R037P7XKSA1

IPZA60R037P7XKSA1

MOSFET N-CH 600V 76A TO247-4

Infineon Technologies

194 -
IPZA60R037P7XKSA1

数据表

CoolMOS™ P7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 76A (Tc) 10V 37mOhm @ 29.5A, 10V Through Hole 4V @ 1.48mA 121 nC @ 10 V 600 V ±20V 5243 pF @ 400 V - - PG-TO247-4 - 255W (Tc) -55°C ~ 150°C (TJ)
E3M0120090J

E3M0120090J

900V 120M AUTOMOTIVE SIC MOSFET

Wolfspeed, Inc.

502 -
E3M0120090J

数据表

E-Series TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Last Time Buy N-Channel SiCFET (Silicon Carbide) 22A (Tc) 15V 155mOhm @ 15A, 15V Surface Mount 3.5V @ 3mA 18 nC @ 15 V 900 V +15V, -4V 414 pF @ 600 V - - TO-263-7 Automotive 83W (Tc) -55°C ~ 150°C (TJ)
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