富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFK50N85X

IXFK50N85X

MOSFET N-CH 850V 50A TO264

Littelfuse Inc.

170 -
IXFK50N85X

数据表

HiPerFET™, Ultra X TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 105mOhm @ 500mA, 10V Through Hole 5.5V @ 4mA 152 nC @ 10 V 850 V ±30V 4480 pF @ 25 V - - TO-264AA - 890W (Tc) -55°C ~ 150°C (TJ)
UF3C065040B3

UF3C065040B3

MOSFET N-CH 650V 41A TO263

Qorvo

443 -
UF3C065040B3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel - 41A (Tc) 12V 52mOhm @ 30A, 12V Surface Mount 6V @ 10mA 51 nC @ 15 V 650 V ±25V 1500 pF @ 100 V - - TO-263 (D2PAK) - 176W (Tc) -55°C ~ 175°C (TJ)
STU13N65M2

STU13N65M2

MOSFET N-CH 650V 10A IPAK

STMicroelectronics

5,692 -
STU13N65M2

数据表

MDmesh™ M2 TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 430mOhm @ 5A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 650 V ±25V 590 pF @ 100 V - - TO-251 (IPAK) - 110W (Tc) 150°C (TJ)
MCAC5D0N10YH-TP

MCAC5D0N10YH-TP

MOSFET N-CH 100 150A DFN5060

Micro Commercial Co

3,545 -
MCAC5D0N10YH-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 10V 5mOhm @ 20A, 10V Surface Mount 4V @ 250µA 98 nC @ 10 V 100 V ±20V 5180 pF @ 50 V - - DFN5060 - 208W (Tj) -55°C ~ 150°C (TJ)
SIHL630STRL-GE3

SIHL630STRL-GE3

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix

6,650 -
SIHL630STRL-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 4V, 5V 400mOhm @ 5.4A, 5V Surface Mount 2V @ 250µA 40 nC @ 10 V 200 V ±10V 1100 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ)
FDP5N50NZ

FDP5N50NZ

MOSFET N-CH 500V 4.5A TO220-3

onsemi

4,613 -
FDP5N50NZ

数据表

UniFET-II™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.5Ohm @ 2.25A, 10V Through Hole 5V @ 250µA 12 nC @ 10 V 500 V ±25V 440 pF @ 25 V - - TO-220-3 - 78W (Tc) -55°C ~ 150°C (TJ)
IPB06N03LB

IPB06N03LB

MOSFET N-CH 30V 50A D2PAK

Infineon Technologies

9,115 -
IPB06N03LB

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 6.3mOhm @ 50A, 10V Surface Mount 2V @ 40µA 22 nC @ 5 V 30 V ±20V 2782 pF @ 15 V - - PG-TO263-3 - 83W (Tc) -55°C ~ 175°C (TJ)
SI4354DY-T1-E3

SI4354DY-T1-E3

MOSFET N-CH 30V 9.5A 8SO

Vishay Siliconix

5,736 -
SI4354DY-T1-E3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9.5A (Ta) 4.5V, 10V 16.5mOhm @ 9.5A, 10V Surface Mount 1.6V @ 250µA 10.5 nC @ 4.5 V 30 V ±12V - - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
SI4354DY-T1-GE3

SI4354DY-T1-GE3

MOSFET N-CH 30V 9.5A 8SO

Vishay Siliconix

7,337 -
SI4354DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9.5A (Ta) 4.5V, 10V 16.5mOhm @ 9.5A, 10V Surface Mount 1.6V @ 250µA 10.5 nC @ 4.5 V 30 V ±12V - - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRFU224PBF

IRFU224PBF

MOSFET N-CH 250V 3.8A TO251AA

Vishay Siliconix

9,479 -
IRFU224PBF

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.8A (Tc) 10V 1.1Ohm @ 2.3A, 10V Through Hole 4V @ 250µA 14 nC @ 10 V 250 V ±20V 260 pF @ 25 V - - TO-251AA - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
FDZ4670

FDZ4670

MOSFET N-CH 30V 25A 20FLFBGA

onsemi

7,384 -
FDZ4670

数据表

PowerTrench® 30-WFBGA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25A (Ta) 4.5V, 10V 2.5mOhm @ 25A, 10V Surface Mount 3V @ 250µA 56 nC @ 10 V 30 V ±20V 3540 pF @ 15 V - - 30-FLFBGA (3.55x4) - 2.5W (Ta) -55°C ~ 150°C (TJ)
STD70N03L-1

STD70N03L-1

MOSFET N-CH 30V 70A IPAK

STMicroelectronics

6,484 -
STD70N03L-1

数据表

STripFET™ III TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 5V, 10V 7.3mOhm @ 35A, 10V Through Hole 1V @ 250µA 21 nC @ 5 V 30 V ±20V 2200 pF @ 25 V - - IPAK - 70W (Tc) -55°C ~ 175°C (TJ)
IRFB5615PBFXKMA1

IRFB5615PBFXKMA1

MOSFET N-CH

Infineon Technologies

8,267 -
IRFB5615PBFXKMA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 39mOhm @ 21A, 10V Through Hole 5V @ 100µA 40 nC @ 10 V 150 V ±20V 1750 pF @ 50 V - - TO-220AB - 144W (Tc) -55°C ~ 175°C (TJ)
RSQ015N06TR

RSQ015N06TR

MOSFET N-CH 60V 1.5A TSMT6

Rohm Semiconductor

1 -
RSQ015N06TR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 4V, 10V 290mOhm @ 1.5A, 10V Surface Mount 2.5V @ 1mA 2 nC @ 5 V 60 V ±20V 110 pF @ 10 V - - TSMT6 (SC-95) - 950mW (Ta) 150°C (TJ)
BSP130,115

BSP130,115

MOSFET N-CH 300V 350MA SOT223

Nexperia USA Inc.

3,884 -
BSP130,115

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 350mA (Ta) 10V 6Ohm @ 250mA, 10V Surface Mount 2V @ 1mA - 300 V ±20V 120 pF @ 25 V - - SOT-223 - 1.5W (Ta) -55°C ~ 150°C (TJ)
BUK98180-100A,115

BUK98180-100A,115

MOSFET N-CH 100V 4.6A SOT-223

NXP USA Inc.

8,620 -
BUK98180-100A,115

数据表

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.6A (Tc) 4.5V, 10V 173mOhm @ 5A, 10V Surface Mount 2V @ 1mA - 100 V ±10V 619 pF @ 25 V AEC-Q101 - SC-73 Automotive 8W (Tc) -55°C ~ 150°C (TJ)
IRF7524D1TRPBF

IRF7524D1TRPBF

MOSFET P-CH 20V 1.7A MICRO8

Infineon Technologies

5,447 -
IRF7524D1TRPBF

数据表

FETKY™ 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.7A (Ta) 2.7V, 4.5V 270mOhm @ 1.2A, 4.5V Surface Mount 700mV @ 250µA (Min) 8.2 nC @ 4.5 V 20 V ±12V 240 pF @ 15 V - Schottky Diode (Isolated) Micro8™ - 1.25W (Ta) -55°C ~ 150°C (TJ)
IXTT6N120

IXTT6N120

MOSFET N-CH 1200V 6A TO268

Littelfuse Inc.

232 -
IXTT6N120

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 2.6Ohm @ 3A, 10V Surface Mount 5V @ 250µA 56 nC @ 10 V 1200 V ±20V 1950 pF @ 25 V - - TO-268AA - 300W (Tc) -55°C ~ 150°C (TJ)
SCT4062KW7TL

SCT4062KW7TL

1200V, 24A, 7-PIN SMD, TRENCH-ST

Rohm Semiconductor

904 -
SCT4062KW7TL

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 24A (Tj) 18V 81mOhm @ 12A, 18V Surface Mount 4.8V @ 6.45mA 64 nC @ 18 V 1200 V +21V, -4V 1498 pF @ 800 V - - TO-263-7L - 93W 175°C (TJ)
IXFH94N30P3

IXFH94N30P3

MOSFET N-CH 300V 94A TO247

Littelfuse Inc.

187 -
IXFH94N30P3

数据表

HiPerFET™, Polar3™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 94A (Tc) 10V 36mOhm @ 47A, 10V Through Hole 5V @ 4mA 102 nC @ 10 V 300 V ±20V 5510 pF @ 25 V - - TO-247 (IXTH) - 1040W (Tc) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户