订单满￥1000免运费

富聪科技 | 全球电子元器件分销商

24小时咨询热线 0755 83957878

首页 > 产品 > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FETs）、MOSFETs

场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

全部重置

全部应用

结果

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IXFH46N65X3 MOSFET 46A 650V X3 TO247 Littelfuse Inc.	352	-	询价单	数据表	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	46A (Tc)	10V	73mOhm @ 23A, 10V	Through Hole	5.2V @ 2.5mA	40 nC @ 10 V	650 V	±20V	2730 pF @ 25 V	-	-	TO-247 (IXFH)	-	520W (Tc)	-55°C ~ 150°C (TJ)
NVMTS0D6N04CLTXG T6 40V LL PQFN8*8 EXPANSI onsemi	2,863	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	78.9A (Ta), 554.5A (Tc)	4.5V, 10V	0.42mOhm @ 50A, 10V	-	2V @ 250µA	265 nC @ 10 V	40 V	±20V	16013 pF @ 20 V	AEC-Q101	-	-	Automotive	5W (Ta), 245W (Tc)	-55°C ~ 175°C (TJ)
IMW65R072M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies	260	-	询价单	数据表	CoolSIC™ M1	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	26A (Tc)	18V	94mOhm @ 13.3A, 18V	Through Hole	5.7V @ 4mA	22 nC @ 18 V	650 V	+23V, -5V	744 pF @ 400 V	-	-	PG-TO247-3-41	-	96W (Tc)	-55°C ~ 150°C (TJ)
NVH4L160N120SC1 SICFET N-CH 1200V 17.3A TO247 onsemi	353	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	17.3A (Tc)	20V	224mOhm @ 12A, 20V	Through Hole	4.3V @ 2.5mA	34 nC @ 20 V	1200 V	+25V, -15V	665 pF @ 800 V	AEC-Q101	-	TO-247-4L	Automotive	111W (Tc)	-55°C ~ 175°C (TJ)
SCT4062KRC15 1200V, 62M, 4-PIN THD, TRENCH-ST Rohm Semiconductor	4,925	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	26A (Tc)	18V	81mOhm @ 12A, 18V	Through Hole	4.8V @ 6.45mA	64 nC @ 18 V	1200 V	+21V, -4V	1498 pF @ 800 V	-	-	TO-247-4L	-	115W	175°C (TJ)
IXFH140N10P MOSFET N-CH 100V 140A TO247AD Littelfuse Inc.	306	-	询价单	数据表	HiPerFET™, Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	140A (Tc)	10V	11mOhm @ 70A, 10V	Through Hole	5V @ 4mA	155 nC @ 10 V	100 V	±20V	4700 pF @ 25 V	-	-	TO-247AD (IXFH)	-	600W (Tc)	-55°C ~ 175°C (TJ)
FDBL9401-F085T6 MOSFET N-CH 40V 58.4/240A 8HPSOF onsemi	5,193	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	58.4A (Ta), 240A (Tc)	-	0.67mOhm @ 50A, 10V	Surface Mount	4V @ 290µA	148 nC @ 10 V	40 V	+20V, -16V	10000 pF @ 25 V	AEC-Q101	-	8-HPSOF	Automotive	4.3W (Ta), 180.7W (Tc)	-55°C ~ 175°C (TJ)
PJMH074N60FRC_T0_00601 600V/ 74MOHM / 53A/ FAST RECOVER Panjit International Inc.	2,984	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	53A (Tc)	10V	74mOhm @ 26.5A, 10V	Through Hole	4.5V @ 250µA	84 nC @ 10 V	600 V	±30V	3871 pF @ 400 V	-	-	TO-247AD	-	446W (Tc)	-55°C ~ 150°C (TJ)
BSC094N03S G MOSFET N-CH 30V 14.6A/35A TDSON Infineon Technologies	6,695	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	14.6A (Ta), 35A (Tc)	4.5V, 10V	9.4mOhm @ 35A, 10V	Surface Mount	2V @ 25µA	14 nC @ 5 V	30 V	±20V	1800 pF @ 15 V	-	-	PG-TDSON-8-1	-	2.8W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
IPP65R050CFD7AAKSA1 MOSFET N-CH 650V 45A TO220-3 Infineon Technologies	500	-	询价单	数据表	CoolMOS™ CFD7A	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	10V	50mOhm @ 24.8A, 10V	Through Hole	4.5V @ 1.24mA	102 nC @ 10 V	650 V	±20V	4975 pF @ 400 V	AEC-Q101	-	PG-TO220-3	Automotive	227W (Tc)	-40°C ~ 150°C (TJ)
SPB18P06P MOSFET P-CH 60V 18.7A D2PAK Infineon Technologies	4,813	-	询价单	数据表	SIPMOS®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	18.7A (Ta)	10V	130mOhm @ 13.2A, 10V	Surface Mount	4V @ 1mA	28 nC @ 10 V	60 V	±20V	860 pF @ 25 V	-	-	PG-TO263-3	-	81.1W (Ta)	-55°C ~ 175°C (TJ)
SIHK055N60E-T1-GE3 E SERIES POWER MOSFET POWERPAK 1 Vishay Siliconix	1,967	-	询价单	数据表	E	8-PowerBSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V	56mOhm @ 16A, 10V	Surface Mount	5V @ 250µA	81 nC @ 10 V	600 V	±30V	3504 pF @ 100 V	-	-	PowerPAK®10 x 12	-	236W (Tc)	-55°C ~ 150°C (TJ)
RP1E090RPTR MOSFET P-CH 30V 9A MPT6 Rohm Semiconductor	9,984	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	9A (Ta)	4V, 10V	16.9mOhm @ 9A, 10V	Surface Mount	2.5V @ 1mA	30 nC @ 5 V	30 V	±20V	3000 pF @ 10 V	-	-	MPT6	-	2W (Ta)	150°C (TJ)
STP34NM60ND MOSFET N-CH 600V 29A TO220 STMicroelectronics	784	-	询价单	数据表	FDmesh™ II	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	110mOhm @ 14.5A, 10V	Through Hole	5V @ 250µA	80.4 nC @ 10 V	600 V	±25V	2785 pF @ 50 V	-	-	TO-220	-	190W (Tc)	150°C (TJ)
IRFD220PBF MOSFET N-CH 200V 800MA 4DIP Vishay Siliconix	9,479	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	800mA (Ta)	10V	800mOhm @ 480mA, 10V	Through Hole	4V @ 250µA	14 nC @ 10 V	200 V	±20V	260 pF @ 25 V	-	-	4-HVMDIP	-	1W (Ta)	-55°C ~ 150°C (TJ)
IXTH80N65X2 MOSFET N-CH 650V 80A TO247 Littelfuse Inc.	301	-	询价单	数据表	Ultra X2	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	40mOhm @ 40A, 10V	Through Hole	4.5V @ 4mA	144 nC @ 10 V	650 V	±30V	7753 pF @ 25 V	-	-	TO-247 (IXTH)	-	890W (Tc)	-55°C ~ 150°C (TJ)
IXFQ60N50P3 MOSFET N-CH 500V 60A TO3P Littelfuse Inc.	316	-	询价单	数据表	HiPerFET™, Polar3™	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	100mOhm @ 30A, 10V	Through Hole	5V @ 4mA	96 nC @ 10 V	500 V	±30V	6250 pF @ 25 V	-	-	TO-3P	-	1040W (Tc)	-55°C ~ 150°C (TJ)
IXFA20N85XHV MOSFET N-CH 850V 20A TO263 Littelfuse Inc.	200	-	询价单	数据表	HiPerFET™, Ultra X	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	330mOhm @ 500mA, 10V	Surface Mount	5.5V @ 2.5mA	63 nC @ 10 V	850 V	±30V	1660 pF @ 25 V	-	-	TO-263HV	-	540W (Tc)	-55°C ~ 150°C (TJ)
SIHG47N60AEF-GE3 MOSFET N-CH 600V 40A TO247AC Vishay Siliconix	216	-	询价单	数据表	EF	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	10V	70mOhm @ 23.5A, 10V	Through Hole	4V @ 250µA	189 nC @ 10 V	600 V	±30V	3576 pF @ 100 V	-	-	TO-247AC	-	313W (Tc)	-55°C ~ 150°C (TJ)
STW56N65M2 MOSFET N-CH 650V 49A TO247 STMicroelectronics	114	-	询价单	数据表	MDmesh™ M2	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	62mOhm @ 24.5A, 10V	Through Hole	4V @ 250µA	93 nC @ 10 V	650 V	±25V	3900 pF @ 100 V	-	-	TO-247-3	-	358W (Tc)	150°C (TJ)

共 36322 条记录«上一页 1... 131 132 133 134135136 137 138...1817 下一页»

搜索

产品

电话

用户

[email protected]

0755 83957878