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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AUIRFP4568-E

AUIRFP4568-E

MOSFET N-CH 150V 171A TO247AD

Infineon Technologies

355 -
AUIRFP4568-E

数据表

HEXFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 171A (Tc) 10V 5.9mOhm @ 103A, 10V Through Hole 5V @ 250µA 227 nC @ 10 V 150 V ±30V 10470 pF @ 50 V - - TO-247AD - 517W (Tc) -55°C ~ 175°C (TJ)
NDS336P

NDS336P

MOSFET P-CH 20V 1.2A SUPERSOT3

onsemi

4,885 -
NDS336P

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.2A (Ta) 2.7V, 4.5V 200mOhm @ 1.3A, 4.5V Surface Mount 1V @ 250µA 8.5 nC @ 4.5 V 20 V ±8V 360 pF @ 10 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
BUK9880-55A,115

BUK9880-55A,115

MOSFET N-CH 55V 7A SOT223

NXP USA Inc.

6,809 -
BUK9880-55A,115

数据表

TrenchMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 4.5V, 10V 73mOhm @ 8A, 10V Surface Mount 2V @ 1mA 11 nC @ 5 V 55 V ±15V 584 pF @ 25 V AEC-Q101 - SC-73 Automotive 8W (Tc) -55°C ~ 150°C (TJ)
NTH4L060N065SC1

NTH4L060N065SC1

SIC MOS TO247-4L 650V

onsemi

499 -
NTH4L060N065SC1

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 47A (Tc) 15V, 18V 70mOhm @ 20A, 18V Through Hole 4.3V @ 6.5mA 74 nC @ 18 V 650 V +22V, -8V 1473 pF @ 325 V - - TO-247-4L - 176W (Tc) -55°C ~ 175°C (TJ)
TP0202K-T1-E3

TP0202K-T1-E3

MOSFET P-CH 30V 385MA SOT23-3

Vishay Siliconix

9,388 -
TP0202K-T1-E3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 385mA (Ta) 4.5V, 10V 1.4Ohm @ 500mA, 10V Surface Mount 3V @ 250µA 1 nC @ 10 V 30 V ±20V 31 pF @ 15 V - - SOT-23-3 (TO-236) - 350mW (Ta) -55°C ~ 150°C (TJ)
SI2305ADS-T1-GE3

SI2305ADS-T1-GE3

MOSFET P-CH 8V 5.4A SOT23-3

Vishay Siliconix

8,514 -
SI2305ADS-T1-GE3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.4A (Tc) 1.8V, 4.5V 40mOhm @ 4.1A, 4.5V Surface Mount 800mV @ 250µA 15 nC @ 4.5 V 8 V ±8V 740 pF @ 4 V - - SOT-23-3 (TO-236) - 960mW (Ta), 1.7W (Tc) -50°C ~ 150°C (TJ)
STW69N65M5-4

STW69N65M5-4

MOSFET N-CH 650V 58A TO247-4L

STMicroelectronics

385 -
STW69N65M5-4

数据表

MDmesh™ V TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 10V 45mOhm @ 29A, 10V Through Hole 5V @ 250µA 143 nC @ 10 V 650 V ±25V 6420 pF @ 100 V - - TO-247-4L - 330W (Tc) 150°C (TJ)
IXFH230N10T

IXFH230N10T

MOSFET N-CH 100V 230A TO247AD

Littelfuse Inc.

300 -
IXFH230N10T

数据表

HiPerFET™, Trench TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 230A (Tc) 10V 4.7mOhm @ 500mA, 10V Through Hole 4.5V @ 1mA 250 nC @ 10 V 100 V ±20V 15300 pF @ 25 V - - TO-247AD (IXFH) - 650W (Tc) -55°C ~ 175°C (TJ)
SIHG47N60E-E3

SIHG47N60E-E3

MOSFET N-CH 600V 47A TO247AC

Vishay Siliconix

225 -
SIHG47N60E-E3

数据表

- TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 64mOhm @ 24A, 10V Through Hole 4V @ 250µA 220 nC @ 10 V 600 V ±30V 9620 pF @ 100 V - - TO-247AC - 357W (Tc) -55°C ~ 150°C (TJ)
NTBL050N65S3H

NTBL050N65S3H

MOSFET - POWER,NCHANNEL, SUPERFE

onsemi

1,278 -
NTBL050N65S3H

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 49A (Tc) 10V 50mOhm @ 24.5A, 10V Surface Mount 4V @ 4.8mA 98 nC @ 10 V 650 V ±30V 4880 pF @ 400 V - - 8-HPSOF - 305W (Tc) -55°C ~ 150°C (TJ)
SCT3105KW7TL

SCT3105KW7TL

SICFET N-CH 1200V 23A TO263-7

Rohm Semiconductor

995 -
SCT3105KW7TL

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 23A (Tc) - 137mOhm @ 7.6A, 18V Surface Mount 5.6V @ 3.81mA 51 nC @ 18 V 1200 V +22V, -4V 574 pF @ 800 V - - TO-263-7 - 125W 175°C (TJ)
SIHK045N60E-T1-GE3

SIHK045N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix

1,806 -
SIHK045N60E-T1-GE3

数据表

E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 48A (Tc) 10V 49mOhm @ 17A, 10V Surface Mount 5V @ 250µA 98 nC @ 10 V 600 V ±30V 4013 pF @ 100 V - - PowerPAK®10 x 12 - 278W (Tc) -55°C ~ 150°C (TJ)
UF4C120053K4S

UF4C120053K4S

1200V/53MOHM, SIC, FAST CASCODE,

Qorvo

505 -
UF4C120053K4S

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Cascode SiCJFET) 34A (Tc) 12V 67mOhm @ 20A, 12V Through Hole 6V @ 10mA 37.8 nC @ 15 V 1200 V ±20V 1370 pF @ 800 V - - TO-247-4 - 263W (Tc) -55°C ~ 175°C (TJ)
SSM3K315T(TE85L,F)

SSM3K315T(TE85L,F)

MOSFET N-CH 30V 6A TSM

Toshiba Semiconductor and Storage

4,409 -
SSM3K315T(TE85L,F)

数据表

U-MOSIV TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 27.6mOhm @ 4A, 10V Surface Mount 2.5V @ 1mA 10.1 nC @ 10 V 30 V ±20V 450 pF @ 15 V - - TSM - 700mW (Ta) 150°C (TJ)
FCA47N60-F109

FCA47N60-F109

MOSFET N-CH 600V 47A TO3PN

onsemi

452 -
FCA47N60-F109

数据表

SuperFET™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 70mOhm @ 23.5A, 10V Through Hole 5V @ 250µA 270 nC @ 10 V 600 V ±30V 8000 pF @ 25 V - - TO-3PN - 417W (Tc) -55°C ~ 150°C (TJ)
NVHL040N60S5F

NVHL040N60S5F

SUPERFET5 FRFET, 40MOHM, TO-247-

onsemi

337 -
NVHL040N60S5F

数据表

FRFET®, SUPERFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 59A (Tc) 10V 40mOhm @ 29.5A, 10V Through Hole 4.8V @ 7.2mA 115 nC @ 10 V 600 V ±30V 6318 pF @ 400 V - - TO-247-3 - 347W (Tc) -55°C ~ 150°C (TJ)
IPW60R075CPFKSA1

IPW60R075CPFKSA1

MOSFET N-CH 650V 39A TO247-3

Infineon Technologies

237 -
IPW60R075CPFKSA1

数据表

CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 39A (Tc) 10V 75mOhm @ 26A, 10V Through Hole 3.5V @ 1.7mA 116 nC @ 10 V 650 V ±20V 4000 pF @ 100 V - - PG-TO247-3-1 - 313W (Tc) -55°C ~ 150°C (TJ)
DMG8880LSS-13

DMG8880LSS-13

MOSFET N-CH 30V 11.6A 8SOP

Diodes Incorporated

2,500 -
DMG8880LSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11.6A (Ta) 4.5V, 10V 10mOhm @ 11.6A, 10V Surface Mount 2V @ 250µA 27.6 nC @ 10 V 30 V ±20V 1289 pF @ 15 V - - 8-SO - 1.43W (Ta) -55°C ~ 150°C (TJ)
AUIRFP4568

AUIRFP4568

MOSFET N-CH 150V 171A TO247AC

Infineon Technologies

386 -
AUIRFP4568

数据表

HEXFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 171A (Tc) 10V 5.9mOhm @ 103A, 10V Through Hole 5V @ 250µA 227 nC @ 10 V 150 V ±30V 10470 pF @ 50 V - - TO-247AC - 517W (Tc) -55°C ~ 175°C (TJ)
RW1C020UNT2R

RW1C020UNT2R

MOSFET N-CH 20V 2A 6WEMT

Rohm Semiconductor

5,277 -
RW1C020UNT2R

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 1.5V, 4.5V 105mOhm @ 2A, 4.5V Surface Mount 1V @ 1mA 2 nC @ 4.5 V 20 V ±10V 180 pF @ 10 V - - 6-WEMT - 400mW (Ta) 150°C (TJ)
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