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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI4484EY-T1-GE3

SI4484EY-T1-GE3

MOSFET N-CH 100V 4.8A 8SO

Vishay Siliconix

7,539 -
SI4484EY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.8A (Ta) 6V, 10V 34mOhm @ 6.9A, 10V Surface Mount 2V @ 250µA (Min) 30 nC @ 10 V 100 V ±20V - - - 8-SOIC - 1.8W (Ta) -55°C ~ 175°C (TJ)
R6035KNZ4C13

R6035KNZ4C13

MOSFET N-CH 600V 35A TO247

Rohm Semiconductor

600 -
R6035KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 102mOhm @ 18.1A, 10V Through Hole 5V @ 1mA 72 nC @ 10 V 600 V ±20V 3000 pF @ 25 V - - TO-247 - 379W (Tc) 150°C (TJ)
IPP055N03LGXKSA1

IPP055N03LGXKSA1

MOSFET N-CH 30V 50A TO220-3

Infineon Technologies

4,105 -
IPP055N03LGXKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V Through Hole 2.2V @ 250µA 31 nC @ 10 V 30 V ±20V 3200 pF @ 15 V - - PG-TO220-3 - 68W (Tc) -55°C ~ 175°C (TJ)
FQPF8N60CT

FQPF8N60CT

MOSFET N-CH 600V 7.5A TO220F

onsemi

3,907 -
FQPF8N60CT

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.5A (Tc) 10V 1.2Ohm @ 3.75A, 10V Through Hole 4V @ 250µA 36 nC @ 10 V 600 V ±30V 1255 pF @ 25 V - - TO-220F-3 - 48W (Tc) -55°C ~ 150°C (TJ)
IMZA65R057M1HXKSA1

IMZA65R057M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies

150 -
IMZA65R057M1HXKSA1

数据表

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 35A (Tc) 18V 74mOhm @ 16.7A, 18V Through Hole 5.7V @ 5mA 28 nC @ 18 V 650 V +20V, -2V 930 pF @ 400 V - - PG-TO247-4-3 - 133W (Tc) -55°C ~ 175°C (TJ)
PJP12NA60_T0_00001

PJP12NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

5,222 -
PJP12NA60_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 700mOhm @ 6A, 10V Through Hole 4V @ 250µA 24 nC @ 10 V 600 V ±30V 1492 pF @ 25 V - - TO-220AB - 225W (Tc) -55°C ~ 150°C (TJ)
IRFB4020PBFXKMA1

IRFB4020PBFXKMA1

TRENCH >=100V

Infineon Technologies

4,390 -
IRFB4020PBFXKMA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 100mOhm @ 11A, 10V Through Hole 4.9V @ 100µA 29 nC @ 10 V 200 V ±20V 1200 pF @ 50 V - - PG-TO220-3-904 - 100W (Tc) -55°C ~ 175°C (TJ)
R6547ENZ4C13

R6547ENZ4C13

650V 47A TO-247, LOW-NOISE POWER

Rohm Semiconductor

324 -
R6547ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 80mOhm @ 25.8A, 10V Through Hole 4V @ 1.72mA 150 nC @ 10 V 650 V ±20V 3800 pF @ 25 V - - TO-247G - 480W (Tc) 150°C (TJ)
RFP3055

RFP3055

MOSFET N-CH 60V 12A TO220-3

onsemi

4,285 -
RFP3055

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 150mOhm @ 12A, 10V Through Hole 4V @ 250µA 23 nC @ 20 V 60 V ±20V 300 pF @ 25 V - - TO-220-3 - 53W (Tc) -55°C ~ 175°C (TJ)
IPL65R1K0C6SATMA1

IPL65R1K0C6SATMA1

MOSFET N-CH 650V 4.2A THIN-PAK

Infineon Technologies

6,254 -
IPL65R1K0C6SATMA1

数据表

CoolMOS™ C6 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.2A (Tc) 10V 1Ohm @ 1.5A, 10V Surface Mount 3.5V @ 150µA 15 nC @ 10 V 650 V ±20V 328 pF @ 100 V - - PG-TSON-8-2 - 34.7W (Tc) -40°C ~ 150°C (TJ)
R6025JNZ4C13

R6025JNZ4C13

MOSFET N-CH 600V 25A TO247G

Rohm Semiconductor

597 -
R6025JNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 15V 182mOhm @ 12.5A, 15V Through Hole 7V @ 4.5mA 57 nC @ 15 V 600 V ±30V 1900 pF @ 100 V - - TO-247G - 306W (Tc) -55°C ~ 150°C (TJ)
STP14NF12

STP14NF12

MOSFET N-CH 120V 14A TO220-3

STMicroelectronics

8,418 -
STP14NF12

数据表

STripFET™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 180mOhm @ 7A, 10V Through Hole 4V @ 250µA 21 nC @ 10 V 120 V ±20V 460 pF @ 25 V - - TO-220 - 60W (Tc) -55°C ~ 175°C (TJ)
NTH4LN040N65S3H

NTH4LN040N65S3H

NTH4LN040N65S3H

onsemi

367 -
NTH4LN040N65S3H

数据表

SuperFET® III TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 62A (Tc) 10V 40mOhm @ 31A, 10V Through Hole 4V @ 6.8mA 132 nC @ 10 V 650 V ±30V 6513 pF @ 400 V - - TO-247-4 - 379W (Tc) -55°C ~ 150°C (TJ)
NVATS5A107PLZT4G

NVATS5A107PLZT4G

MOSFET P-CHANNEL 40V 55A ATPAK

onsemi

5,326 -
NVATS5A107PLZT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 55A (Ta) 4.5V, 10V 17mOhm @ 25A, 10V Surface Mount 2.6V @ 1mA 47 nC @ 10 V 40 V ±20V 2400 pF @ 20 V AEC-Q101 - ATPAK Automotive 60W (Tc) -55°C ~ 175°C (TJ)
BSS138W-7

BSS138W-7

MOSFET N-CH 50V 0.2A SOT323

Diodes Incorporated

7,376 -
BSS138W-7

数据表

- SC-70, SOT-323 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V Surface Mount 1.5V @ 250µA - 50 V ±20V 50 pF @ 10 V - - SOT-323 - 200mW (Ta) -55°C ~ 150°C (TJ)
IXFH12N100P

IXFH12N100P

MOSFET N-CH 1000V 12A TO247AD

Littelfuse Inc.

570 -
IXFH12N100P

数据表

HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 1.05Ohm @ 6A, 10V Through Hole 5V @ 1mA 80 nC @ 10 V 1000 V ±30V 4080 pF @ 25 V - - TO-247AD (IXFH) - 463W (Tc) -55°C ~ 150°C (TJ)
BSS84W-7

BSS84W-7

MOSFET P-CH 50V 130MA SOT323

Diodes Incorporated

2,902 -
BSS84W-7

数据表

- SC-70, SOT-323 Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 130mA (Ta) 5V 10Ohm @ 100mA, 5V Surface Mount 2V @ 1mA - 50 V ±20V 45 pF @ 25 V - - SOT-323 - 200mW (Ta) -55°C ~ 150°C (TJ)
RHK005N03T146

RHK005N03T146

MOSFET N-CH 30V 500MA SMT3

Rohm Semiconductor

6,382 -
RHK005N03T146

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 500mA (Ta) 4V, 10V 550mOhm @ 500mA, 10V Surface Mount 2.5V @ 1mA - 30 V ±20V 45 pF @ 10 V - - SMT3 - 200mW (Ta) 150°C (TJ)
STO68N65DM6

STO68N65DM6

N-CHANNEL 650 V, 53 MOHM TYP., 5

STMicroelectronics

187 -
STO68N65DM6

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 65mOhm @ 27.5A, 10V Surface Mount 4.75V @ 250µA 80 nC @ 10 V 650 V ±25V 3528 pF @ 100 V - - TOLL (HV) - 240W (Tc) -55°C ~ 150°C (TJ)
IRFR310TRRPBF

IRFR310TRRPBF

MOSFET N-CH 400V 1.7A DPAK

Vishay Siliconix

5,206 -
IRFR310TRRPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V Surface Mount 4V @ 250µA 12 nC @ 10 V 400 V ±20V 170 pF @ 25 V - - DPAK - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
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