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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDP039N08B-F102

FDP039N08B-F102

MOSFET N-CH 80V 120A TO220-3

onsemi

418 -
FDP039N08B-F102

数据表

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.9mOhm @ 100A, 10V Through Hole 4.5V @ 250µA 133 nC @ 10 V 80 V ±20V 9450 pF @ 40 V - - TO-220-3 - 214W (Tc) -55°C ~ 175°C (TJ)
R6030KNZC17

R6030KNZC17

MOSFET N-CH 600V 30A TO3PF

Rohm Semiconductor

300 -
R6030KNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 5V @ 1mA 56 nC @ 10 V 600 V ±20V 2350 pF @ 25 V - - TO-3PF - 86W (Tc) 150°C (TJ)
IXTP150N15X4

IXTP150N15X4

MOSFET N-CH 150V 150A TO220

Littelfuse Inc.

290 -
IXTP150N15X4

数据表

Ultra X4 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 10V 7.2mOhm @ 75A, 10V Through Hole 4.5V @ 250µA 105 nC @ 10 V 150 V ±20V 5500 pF @ 25 V - - TO-220-3 - 480W (Tc) -55°C ~ 175°C (TJ)
IXFP26N50P3

IXFP26N50P3

MOSFET N-CH 500V 26A TO220AB

Littelfuse Inc.

250 -
IXFP26N50P3

数据表

HiPerFET™, Polar3™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 26A (Tc) 10V 230mOhm @ 13A, 10V Through Hole 5V @ 4mA 42 nC @ 10 V 500 V ±30V 2220 pF @ 25 V - - TO-220-3 - 500W (Tc) -55°C ~ 150°C (TJ)
IPZ65R065C7XKSA1

IPZ65R065C7XKSA1

MOSFET N-CH 650V 33A TO247-4

Infineon Technologies

145 -
IPZ65R065C7XKSA1

数据表

CoolMOS™ C7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 65mOhm @ 17.1A, 10V Through Hole 4V @ 850µA 64 nC @ 10 V 650 V ±20V 3020 pF @ 400 V - - PG-TO247-4 - 171W (Tc) -55°C ~ 150°C (TJ)
MSC180SMA120B

MSC180SMA120B

MOSFET 1200V 25A TO-247

Microchip Technology

105 -
MSC180SMA120B

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 21A (Tc) 5V, 20V 225mOhm @ 8A, 20V Through Hole 4.5V @ 500µA 36 nC @ 20 V 1200 V +23V, -10V 530 pF @ 1000 V - - TO-247-3 - 147W (Tc) -55°C ~ 175°C (TJ)
NTMFS10N3D2C

NTMFS10N3D2C

MOSFET N-CH 100V 151A POWER56

onsemi

1,150 -
NTMFS10N3D2C

数据表

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 151A (Tc) 6V, 10V 3.2mOhm @ 67A, 10V Surface Mount 4V @ 370µA 84 nC @ 10 V 100 V ±20V 6215 pF @ 50 V - - Power56 - 138W (Tc) -55°C ~ 150°C (TJ)
R6030KNZ4C13

R6030KNZ4C13

MOSFET N-CH 600V 30A TO247

Rohm Semiconductor

584 -
R6030KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 5V @ 1mA 56 nC @ 10 V 600 V ±20V 2350 pF @ 25 V - - TO-247 - 305W (Tc) 150°C (TJ)
IPP65R041CFD7XKSA1

IPP65R041CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies

489 -
IPP65R041CFD7XKSA1

数据表

CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 41mOhm @ 24.8A, 10V Through Hole 4.5V @ 1.24mA 102 nC @ 10 V 650 V ±20V 4975 pF @ 400 V - - PG-TO220-3-1 - 227W (Tc) -55°C ~ 150°C (TJ)
IMBG65R072M1HXTMA1

IMBG65R072M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

817 -
IMBG65R072M1HXTMA1

数据表

CoolSIC™ M1 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 33A (Tc) 18V 94mOhm @ 13.3A, 18V Surface Mount 5.7V @ 4mA 22 nC @ 18 V 650 V +23V, -5V 744 pF @ 400 V - - PG-TO263-7-12 - 140W (Tc) -55°C ~ 175°C (TJ)
NVHL055N60S5F

NVHL055N60S5F

SUPERFET5 FRFET, 55MOHM, TO-247-

onsemi

528 -
NVHL055N60S5F

数据表

FRFET®, SUPERFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 55mOhm @ 22.5A, 10V Through Hole 4.8V @ 5.2mA 85.2 nC @ 10 V 600 V ±30V 4603 pF @ 400 V - - TO-247-3 - 278W (Tc) -55°C ~ 150°C (TJ)
IXFH30N85X

IXFH30N85X

MOSFET N-CH 850V 30A TO247AD

Littelfuse Inc.

290 -
IXFH30N85X

数据表

HiPerFET™, Ultra X TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 220mOhm @ 500mA, 10V Through Hole 5.5V @ 2.5mA 68 nC @ 10 V 850 V ±30V 2460 pF @ 25 V - - TO-247 (IXTH) - 695W (Tc) -55°C ~ 150°C (TJ)
SIHH070N60EF-T1GE3

SIHH070N60EF-T1GE3

MOSFET N-CH 600V 36A PPAK 8 X 8

Vishay Siliconix

3,000 -
SIHH070N60EF-T1GE3

数据表

EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 71mOhm @ 15A, 10V Surface Mount 5V @ 250µA 75 nC @ 10 V 600 V ±30V 2647 pF @ 100 V - - PowerPAK® 8 x 8 - 202W (Tc) -55°C ~ 150°C (TJ)
R6535ENZC17

R6535ENZC17

MOSFET N-CH 650V 35A TO3

Rohm Semiconductor

300 -
R6535ENZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 115mOhm @ 18.1A, 10V Through Hole 4V @ 1.21mA 110 nC @ 10 V 650 V ±20V 2600 pF @ 25 V - - TO-3PF - 102W (Tc) 150°C (TJ)
MCU12P10A-TP

MCU12P10A-TP

P-CHANNEL MOSFET, DPAK

Micro Commercial Co

3,470 -
MCU12P10A-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12A - 185mOhm @ 5A, 10V Surface Mount 2V @ 250µA 26 nC @ 10 V 100 V ±25V 1460 pF @ 50 V - - DPAK - 50W -55°C ~ 150°C (TJ)
PJA3470_R1_00001

PJA3470_R1_00001

SOT-23, MOSFET

Panjit International Inc.

5,550 -
PJA3470_R1_00001

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.3A (Ta) 4.5V, 10V 320mOhm @ 1.3A, 10V Surface Mount 2.5V @ 250µA 9.1 nC @ 10 V 100 V ±20V 508 pF @ 30 V - - SOT-23 - 1.2W (Ta) -55°C ~ 150°C (TJ)
IRFR9024NTRR

IRFR9024NTRR

MOSFET P-CH 55V 11A DPAK

Infineon Technologies

7,339 -
IRFR9024NTRR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 175mOhm @ 6.6A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 55 V ±20V 350 pF @ 25 V - - TO-252AA (DPAK) - 38W (Tc) -55°C ~ 150°C (TJ)
FQD6N50CTF

FQD6N50CTF

MOSFET N-CH 500V 4.5A DPAK

onsemi

2,045 -
FQD6N50CTF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.2Ohm @ 2.25A, 10V Surface Mount 4V @ 250µA 25 nC @ 10 V 500 V ±30V 700 pF @ 25 V - - TO-252AA - 2.5W (Ta), 61W (Tc) -55°C ~ 150°C (TJ)
FQD7N30TF

FQD7N30TF

MOSFET N-CH 300V 5.5A DPAK

onsemi

2,211 -
FQD7N30TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 700mOhm @ 2.75A, 10V Surface Mount 5V @ 250µA 17 nC @ 10 V 300 V ±30V 610 pF @ 25 V - - TO-252AA - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
FQD2N80TF

FQD2N80TF

MOSFET N-CH 800V 1.8A DPAK

onsemi

2,919 -
FQD2N80TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.8A (Tc) 10V 6.3Ohm @ 900mA, 10V Surface Mount 5V @ 250µA 15 nC @ 10 V 800 V ±30V 550 pF @ 25 V - - TO-252AA - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
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