International Rectifier|场效应晶体管（FETs）、MOSFETs - 页 24

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFB7446GPBF IRFB7446 - POWER MOSFET International Rectifier	1,000	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	6V, 10V	3.3mOhm @ 70A, 10V	Through Hole	3.9V @ 100µA	93 nC @ 10 V	40 V	±20V	3183 pF @ 25 V	-	-	TO-220AB	-	99W (Tc)	-
IRFZ44NSTRRPBF HEXFET POWER MOSFET International Rectifier	450	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	17.5mOhm @ 25A, 10V	Surface Mount	4V @ 250µA	63 nC @ 10 V	55 V	±20V	1470 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 94W (Tc)	-55°C ~ 175°C (TJ)
IRFH5250DTRPBF IRFH5250 - 12V-300V N-CHANNEL PO International Rectifier	902	-	询价单	数据表	HEXFET®	8-PowerVDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta), 100A (Tc)	4.5V, 10V	1.4mOhm @ 50A, 10V	Surface Mount	2.35V @ 150µA	83 nC @ 10 V	25 V	±20V	6115 pF @ 13 V	-	-	8-PQFN (5x6)	-	3.6W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)
AUIRFU1010Z MOSFET N-CH 55V 42A TO251-3 International Rectifier	375	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	-	7.5mOhm @ 42A, 10V	Through Hole	4V @ 100µA	95 nC @ 10 V	55 V	±20V	2840 pF @ 25 V	-	-	PG-TO251-3	-	140W (Tc)	-55°C ~ 175°C (TJ)
AUIRFZ44Z MOSFET N-CH 55V 51A TO220 International Rectifier	613	-	询价单	数据表	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	10V	13.9mOhm @ 31A, 10V	Through Hole	4V @ 250µA	43 nC @ 10 V	55 V	±20V	1420 pF @ 25 V	-	-	TO-220	-	80W (Tc)	-55°C ~ 175°C (TJ)
AUIRFZ44N AUTOMOTIVE HEXFET N CHANNEL International Rectifier	951	-	询价单	数据表	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	17.5mOhm @ 25A, 10V	Through Hole	4V @ 250µA	63 nC @ 10 V	55 V	±20V	1470 pF @ 25 V	-	-	TO-220AB	-	94W (Tc)	-55°C ~ 175°C (TJ)
IRF9143 MOSFET P-CH 80V 15A TO204AE International Rectifier	80	-	询价单	数据表	HEXFET®	TO-204AE	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	15A	-	-	Through Hole	-	-	80 V	-	-	-	-	TO-204AE	-	125W	-
IRFAF42 MOSFET N-CH 500V 7A TO204AE International Rectifier	60	-	询价单	数据表	HEXFET®	TO-204AE	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7A	-	-	Through Hole	-	-	500 V	-	-	-	-	TO-204AE	-	125W	-
IRF6620TRPBF IRF6620 - 12V-300V N-CHANNEL POW International Rectifier	653	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	27A (Ta), 150A (Tc)	4.5V, 10V	2.7mOhm @ 27A, 10V	Surface Mount	2.45V @ 250µA	42 nC @ 4.5 V	20 V	±20V	4130 pF @ 10 V	-	-	DIRECTFET™ MX	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)
IRFZ46ZSPBF IRFZ46 - 12V-300V N-CHANNEL POWE International Rectifier	800	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	10V	13.6mOhm @ 31A, 10V	Surface Mount	4V @ 250µA	46 nC @ 10 V	55 V	±20V	1460 pF @ 25 V	-	-	D2PAK	-	82W (Tc)	-55°C ~ 175°C (TJ)

共 244 条记录«上一页 1... 20 21 22 232425 下一页»