GeneSiC Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 7

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
2N7640-GA TRANS SJT 650V 16A TO276 GeneSiC Semiconductor	9,279	-	询价单	数据表	-	TO-276AA	Bulk	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	16A (Tc) (155°C)	-	105mOhm @ 16A	Surface Mount	-	-	650 V	-	1534 pF @ 35 V	-	-	TO-276	-	330W (Tc)	-55°C ~ 225°C (TJ)
2N7639-GA TRANS SJT 650V 15A TO257 GeneSiC Semiconductor	9,645	-	询价单	数据表	-	TO-257-3	Bulk	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	15A (Tc) (155°C)	-	105mOhm @ 15A	Through Hole	-	-	650 V	-	1534 pF @ 35 V	-	-	TO-257	-	172W (Tc)	-55°C ~ 225°C (TJ)
GA50JT06-258 TRANS SJT 600V 100A TO258 GeneSiC Semiconductor	7,151	-	询价单	数据表	-	TO-258-3, TO-258AA	Bulk	Active	-	SiC (Silicon Carbide Junction Transistor)	100A (Tc)	-	25mOhm @ 50A	Through Hole	-	-	600 V	-	-	-	-	TO-258	-	769W (Tc)	-55°C ~ 225°C (TJ)
G2R1000MT17J SIC MOSFET N-CH 3A TO263-7 GeneSiC Semiconductor	10,528	-	询价单	数据表	G2R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	3A (Tc)	20V	1.2Ohm @ 2A, 20V	Surface Mount	4V @ 2mA	-	1700 V	+20V, -10V	139 pF @ 1000 V	-	-	TO-263-7	-	54W (Tc)	-55°C ~ 175°C (TJ)
G3R160MT12J SIC MOSFET N-CH 19A TO263-7 GeneSiC Semiconductor	415	-	询价单	数据表	G3R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	19A (Tc)	15V	208mOhm @ 10A, 15V	Surface Mount	2.7V @ 5mA (Typ)	23 nC @ 15 V	1200 V	+20V, -10V	724 pF @ 800 V	-	-	TO-263-7	-	128W (Tc)	-55°C ~ 175°C (TJ)
G3R450MT17J SIC MOSFET N-CH 9A TO263-7 GeneSiC Semiconductor	5,550	-	询价单	数据表	G3R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	9A (Tc)	15V	585mOhm @ 4A, 15V	Surface Mount	2.7V @ 2mA	18 nC @ 15 V	1700 V	±15V	454 pF @ 1000 V	-	-	TO-263-7	-	91W (Tc)	-55°C ~ 175°C (TJ)
G3R60MT07J 750V 60M TO-263-7 G3R SIC MOSFET GeneSiC Semiconductor	198	-	询价单	数据表	G3R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	-	SiCFET (Silicon Carbide)	-	-	-	Surface Mount	-	-	750 V	+20V, -10V	-	-	-	TO-263-7	-	-	-
G3R40MT12J SIC MOSFET N-CH 75A TO263-7 GeneSiC Semiconductor	421	-	询价单	数据表	G3R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	75A (Tc)	15V	48mOhm @ 35A, 15V	Surface Mount	2.7V @ 18mA (Typ)	106 nC @ 15 V	1200 V	±15V	2929 pF @ 800 V	-	-	TO-263-7	-	374W (Tc)	-55°C ~ 175°C (TJ)
G2R1000MT33J SIC MOSFET N-CH 4A TO263-7 GeneSiC Semiconductor	1,853	-	询价单	数据表	G2R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	4A (Tc)	20V	1.2Ohm @ 2A, 20V	Surface Mount	3.5V @ 2mA	21 nC @ 20 V	3300 V	+20V, -5V	238 pF @ 1000 V	-	-	TO-263-7	-	74W (Tc)	-55°C ~ 175°C (TJ)
G2R50MT33K 3300V 50M TO-247-4 SIC MOSFET GeneSiC Semiconductor	8,080	-	询价单	数据表	G2R™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	63A (Tc)	20V	50mOhm @ 40A, 20V	Through Hole	3.5V @ 10mA (Typ)	340 nC @ 20 V	3300 V	+25V, -10V	7301 pF @ 1000 V	-	-	TO-247-4	-	536W (Tc)	-55°C ~ 175°C (TJ)

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